J. Provine

High-density waveguide superlattices with low crosstalk

Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed in integrated circuits. Waveguides are perhaps the most ubiquitous component in silicon photonics. As such, the density of waveguide elements is expected to have a crucial influence on the integration density of a silicon photonic chip. A solution to high-density waveguide integration with minimal impact on other performance metrics such as crosstalk remains a vital issue in many applications. Here, we propose a waveguide superlattice and demonstrate advanced superlattice design concepts such as interlacing-recombination that enable high-density waveguide integration at a half-wavelength pitch with low crosstalk. Such waveguide superlattices can potentially lead to significant reduction in on-chip estate for waveguide elements and salient enhancement of performance for important applications, opening up possibilities for half-wavelength-pitch optical-phased arrays and ultra-dense space-division multiplexing.

Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Plasma-enhanced atomic layer deposition (PEALD) provides multiple benefits compared to thermal ALD including lower possible process temperature and a wider palette of possible materials. However, coverage of high aspect ratio (AR) structures is limited due to the recombination rates of the radical plasma species. We study the limits of conformality in 1:30 AR structures for TiO2 based on tetrakis(dimethylamido)titanium (TDMA-Ti) and O2 plasma through variation in plasma exposure and substrate temperature. Extending plasma exposure duration and decreasing substrate temperature within the ALD window both serve to improve the conformality of the deposited film, with coverage >95% achievable. Additionally, the changes in morphology of the TiO2 were examined with crystallites of anatase and brookite found.

Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O2) and several metal organic precursors based on TDMA ligands. The effect of O2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O2 plasma.

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350u2009°C, it was shown to be possible to achieve a WER in PEALD SiNx ...

Plasma-enhanced atomic layer deposition of superconducting niobium nitride

Thin films of niobium nitride are useful for their physical, chemical, and electrical properties. NbN superconducting properties have been utilized in a wide range of applications. Plasma-enhanced atomic layer deposition (PEALD) of NbN with (t-butylimido) tris(diethylamido) niobium(V) and remote H2/N2 plasmas has been investigated. Deposited film properties have been studied as a function of substrate temperature (100–300 °C), plasma power (150–300u2009W), and H2 flow rate (10–80 sccm). PEALD NbN films were characterized with spectroscopic ellipsometry (thickness, optical properties), four point probe (resistivity), x-ray photoelectron spectroscopy (composition), x-ray reflectivity (density and thickness), x-ray diffraction (crystallinity), and superconductivity measurements. Film composition varied with deposition conditions, but larger cubic NbN crystallites and increased film density at higher substrate temperatures and H2 flow rates lead to room temperature resistivity values as low as 173u2009μΩu2009cm and super...

ETCH “sandbox”: Controlled release dimensions through atomic layer deposition etch stop with trench refill and polish

We report on the demonstration of a microfabrication process which allows the release of suspended films or structures of varying sizes in which the release volume is predefined by i) lithographic patterning, ii) etch-stop deposition by atomic layer deposition (ALD), iii) refilling sacrificial layer into the empty volume, and iv) subsequent chemical mechanical planarization (CMP). We refer to this as an “etch sandbox,” which allows the user to process devices on a planarized substrate after completion of the sandbox. We demonstrate micrometer scale Al2O3 suspended membranes utilizing Al2O3 as the etch-stop and polysilicon as the refill/sacrificial etch material. Within a single substrate and single release, defined etch volumes up to differing by up to a factor of 104 can be realized. Considering the flexibility of this process, suspended membranes with more complicated structure and composition could be developed in the future.

High-Density Low-Crosstalk Waveguide Superlattice

Waveguides are ubiquitous in silicon photonics. The density of waveguides is crucial to the integration density. We propose and demonstrate a waveguide superlattice that enables high-density waveguide integration at a half-wavelength pitch with low crosstalk.