J. Rieger

High power quantum-well gain-coupled (GC) DFB lasers at 1.3 /spl mu/m and 1.55 /spl mu/m

Summary form only given. High power characteristics of InGaAsP quantum-well gain-coupled DFB lasers with a loss grating are presented. Among these are record single-mode (SM) values of 115 mW at 1.3 /spl mu/m and 95 mW at 1.55 /spl mu/m. The SM-yield at 20 mW is as high as 66%.

Tunable twin-guide lasers with improved performance fabricated by metal-organic vapor phase epitaxy

Tunable twin-guide (TTG) laser diodes have been fabricated using metal-organic vapor phase epitaxy (MOVPE) exclusively for all epitaxy stages. A significant performance improvement over previous experiments has been achieved with an effective current confinement in a considerably simpler laser structure. As a consequence, continuous wavelength tuning over 4.7 nm is obtained while maintaining a light output power per facet of 3 mW.<<ETX>>

Monolithic integrated DFB laser with electroabsorption modulator by identical active layer structure composed of two different QW types

The first monolithic integration of a 1.55 /spl mu/m ridge waveguide DFB laser with an EA modulator using an identical active MOW-layer structure composed of two different QW types is reported. Minimum threshold currents of 17 mA, voltage swing <1.5 V for 10 dB extinction ratio and 2 Gbit/s modulation capability are obtained.

Gain-coupled strained layer MQW-DFB lasers with an essentially simplified fabrication process for /spl lambda/=1.55 μm

A gain-coupled (GC) strained-layer (SL) multi-quantum-well (MQW) distributed-feedback (DFB) laser with a metallized surface grating and a substantially simplified fabrication process made by single-step epitaxy without corrugation overgrowth is described. The complex coupling coefficient can be adjusted by the contact metallization. Room-temperature single-mode continuous-wave (CW) operation with a threshold current of 22 mA, an output power of 20 mW, and a linewidth of 2.5 MHz is demonstrated.<<ETX>>