J. S. Tsai
NEC
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Featured researches published by J. S. Tsai.
Nature | 1999
Yasunobu Nakamura; Yu. A. Pashkin; J. S. Tsai
A nanometre-scale superconducting electrode connected to a reservoir via a Josephson junction constitutes an artificial two-level electronic system: a single-Cooper-pair box. The two levels consist of charge states (differing by 2e, where e is the electronic charge) that are coupled by tunnelling of Cooper pairs through the junction. Although the two-level system is macroscopic, containing a large number of electrons, the two charge states can be coherently superposed. The Cooper-pair box has therefore been suggested as a candidate for a quantum bit or ‘qubit’—the basic component of a quantum computer. Here we report the observation of quantum oscillations in a single-Cooper-pair box. By applying a short voltage pulse via a gate electrode, we can control the coherent quantum state evolution: the pulse modifies the energies of the two charge states non-adiabatically, bringing them into resonance. The resulting state—a superposition of the two charge states—is detected by a tunnelling current through a probe junction. Our results demonstrate electrical coherent control of a qubit in a solid-state electronic device.
Nature | 2003
Yuri Pashkin; Tsuyoshi Yamamoto; Oleg V. Astafiev; Yasunobu Nakamura; Dmitri V. Averin; J. S. Tsai
A practical quantum computer, if built, would consist of a set of coupled two-level quantum systems (qubits). Among the variety of qubits implemented, solid-state qubits are of particular interest because of their potential suitability for integrated devices. A variety of qubits based on Josephson junctions have been implemented; these exploit the coherence of Cooper-pair tunnelling in the superconducting state. Despite apparent progress in the implementation of individual solid-state qubits, there have been no experimental reports of multiple qubit gates—a basic requirement for building a real quantum computer. Here we demonstrate a Josephson circuit consisting of two coupled charge qubits. Using a pulse technique, we coherently mix quantum states and observe quantum oscillations, the spectrum of which reflects interaction between the qubits. Our results demonstrate the feasibility of coupling multiple solid-state qubits, and indicate the existence of entangled two-qubit states.
Nature | 2003
T. Yamamoto; Yuri Pashkin; Oleg V. Astafiev; Yasunobu Nakamura; J. S. Tsai
Following the demonstration of coherent control of the quantum state of a superconducting charge qubit, a variety of qubits based on Josephson junctions have been implemented. Although such solid-state devices are not currently as advanced as microscopic qubits based on nuclear magnetic resonance and ion trap technologies, the potential scalability of the former systems—together with progress in their coherence times and read-out schemes—makes them strong candidates for the building block of a quantum computer. Recently, coherent oscillations and microwave spectroscopy of capacitively coupled superconducting qubits have been reported; the next challenging step towards quantum computation is the realization of logic gates. Here we demonstrate conditional gate operation using a pair of coupled superconducting charge qubits. Using a pulse technique, we prepare different input states and show that their amplitude can be transformed by controlled-NOT (C-NOT) gate operation, although the phase evolution during the gate operation remains to be clarified.
Nature | 2007
Oleg V. Astafiev; Kunihiro Inomata; Antti O. Niskanen; Takashi Yamamoto; Yuri Pashkin; Yasunobu Nakamura; J. S. Tsai
Solid-state superconducting circuits are versatile systems in which quantum states can be engineered and controlled. Recent progress in this area has opened up exciting possibilities for exploring fundamental physics as well as applications in quantum information technology; in a series of experiments it was shown that such circuits can be exploited to generate quantum optical phenomena, by designing superconducting elements as artificial atoms that are coupled coherently to the photon field of a resonator. Here we demonstrate a lasing effect with a single artificial atom—a Josephson-junction charge qubit—embedded in a superconducting resonator. We make use of one of the properties of solid-state artificial atoms, namely that they are strongly and controllably coupled to the resonator modes. The device is essentially different from existing lasers and masers; one and the same artificial atom excited by current injection produces many photons.
Physical Review Letters | 2010
Oleg V. Astafiev; A.A. Abdumalikov; Alexandre M. Zagoskin; Yu. A. Pashkin; Yusuke Nakamura; J. S. Tsai
We report amplification of electromagnetic waves by a single artificial atom in open 1D space. Our three-level artificial atom--a superconducting quantum circuit--coupled to a transmission line presents an analog of a natural atom in open space. The system is the most fundamental quantum amplifier whose gain is limited by a spontaneous emission mechanism. The noise performance is determined by the quantum noise revealed in the spectrum of spontaneous emission, also characterized in our experiments.
Applied Physics Letters | 1997
Chii-Dong Chen; Y. Nakamura; J. S. Tsai
We have developed an aluminum single-electron transistor device which was modified to incorporate an additional floating node in between the gate and the electrometer. At high gate voltages, Fowler–Nordheim type emission occurred between the gate and the floating node where the charges were stored. The emission events were evidenced by the oscillatory electrometer current which allowed estimation of the number of storage electrons. We demonstrated experimentally the nonvolatile memory function of this device and the results were justified by numeric simulations.
Applied Physics Letters | 2008
T. Li; Yu. A. Pashkin; O. Astafiev; Yasunobu Nakamura; J. S. Tsai; Hyunsik Im
We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators.
Applied Physics Letters | 1996
Yasunobu Nakamura; D. L. Klein; J. S. Tsai
We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron‐beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes.
Applied Physics Letters | 2009
Antti Kemppinen; Sergey Kafanov; Yury Pashkin; J. S. Tsai; Dmitri V. Averin; Jukka P. Pekola
We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the amplitude of the gate drive and thereby the maximum pumped current of the turnstile. We compare results obtained with sine and square wave drive and show how a fast rise time can suppress errors due to leakage current. Quantized current plateaus up to 160 pA are demonstrated.
Physical Review Letters | 2011
V. F. Maisi; Olli-Pentti Saira; Yu. A. Pashkin; J. S. Tsai; Dmitri V. Averin; Jukka P. Pekola
We provide a direct proof of two-electron Andreev transitions in a superconductor-normal-metal tunnel junction by detecting them in a real-time electron counting experiment. Our results are consistent with ballistic Andreev transport with an order of magnitude higher rate than expected for a uniform barrier, suggesting that only part of the interface is effectively contributing to the transport. These findings are quantitatively supported by our direct current measurements in single-electron transistors with similar tunnel barriers.