J. Schmitz

HIGH PERFORMANCE INAS/GA1-XINXSB SUPERLATTICE INFRARED PHOTODIODES

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 μm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-background concentration the depletion width exceeds a critical size of about 60 nm, leading to the suppression of band-to-band tunneling currents. Above that critical width the dynamic impedance R0A at 77 K reaches values above 1 kΩu2009cm2 leading to a Johnson-noise-limited detectivity in excess of 1×1012 cm√Hz/W.

Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y

An approach for the passivation of photodiodes based on compounds of the InAs∕GaSb∕AlSb materials family is presented. The passivation is realized by the overgrowth of patterned mesa devices with a quaternary AlxGa1−xAsySb1−y layer, lattice matched to the GaSb substrate. Proof of concept is demonstrated on infrared photodiodes based on InAs∕(GaIn)Sb superlattices with 10μm cutoff wavelength operating at 77 K where suppression of surface leakage currents is observed.

Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes

Trap centers with an energy level positioned 1/3 of the band gap below the effective conduction band edge are observed in the electroluminescence spectra of InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 11 μm. The trap centers are recognized by simulating the low-temperature current–voltage characteristics of the diodes. Excellent quantitative agreement on both, the I–V characteristic and the differential resistance between the experimental data and the theoretical prediction is achieved. The quantitative simulation of the I–V characteristics shows, that the 77 K performance of InAs/(GaIn)Sb photodiodes is dominated by generation-recombination processes even at long wavelengths. Above 50 K, tunneling currents are not of importance.

Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs.

Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes

Strained single- and triple-quantum-well (SQW and TQW), large optical cavity GaInAsSb/AlGaAsSb/GaSb laser diodes emitting at 2.26 μm are investigated. Internal loss coefficients as low as 5 and 7.7u2002cm−1 for the SQW and TQW, respectively, and relatively high internal quantum efficiencies of 65% (SQW) and 69% (TQW) were obtained. Extrapolated threshold current densities for infinite cavity lengths of 55 and 150u2002A/cm2 have been deduced for the SQW and TQW, respectively. These values scale very well with the number of QWs and are among the lowest reported for diode lasers in this wavelength range. A differential quantum efficiency as high as 50% and a total power efficiency of 23% were achieved at 280 K. The temperature dependence of the threshold current density revealed a high characteristic temperature of 110 K. Single-ended output powers of 240 mW in continuous-wave mode and exceeding 0.5 W in pulsed operation were obtained for a TQW laser with high-reflection/antireflection coated facets at 280 K, mounte...

GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power

We report on GaSb-based 2.Xμm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3μm ridge-waveguide lasers with the improved epitaxial design showed, besides the narrow beam profile in the fast axis, an excellent slow axis beam quality [M2<1.1 up to 70mW, continuous wave (cw)]. 2.0μm broad-area lasers with the improved waveguide too, exhibit a maximum cw-output power of 1.96W.

Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers

Strained triple-quantum-well, large-optical-cavity GaInSb/AlGaAsSb/GaSb diode lasers emitting at 1.98 μm at 300 K are investigated with regard to their high-power capability. As the heating of the active region is a limiting factor for these devices, a quantitative model is derived to simulate the performance of these lasers including thermal effects. The standard laser parameters, deduced from measurements on ridge waveguide lasers, and the measured thermal resistance of the mounted devices were then taken as input parameters. The output power and power efficiency of the lasers calculated using the presented model. Good agreement was found between calculated data and the measurements for different heatsink temperatures as well as for different laser geometries and mounting techniques. The maximum output power achieved for p-side down mounted 1000×150u2009μm2 broad-area laser was 1.7 W at 300 K in cw operation.

Comprehensive analysis of the internal losses in 2.0μm (AlGaIn)(AsSb) quantum-well diode lasers

We have fabricated and characterized high-power 2.0 μm-wavelength (AlGaIn)(AsSb) quantum-well diode lasers emitting a power of 1.7 W in continuous-wave operation and over 9 W in pulsed operation at 300 K heat sink temperature. For potential further improvement of laser performance, the different contribution to the internal losses αi has been analyzed in detail for the present laser structure. Consistent results have been obtained for a series of samples, for which different design parameters were varied systematically: As expected, the losses in the cladding layers are dominated by free carrier absorption in the p-doped cladding. The cross section for free-hole absorption in Al0.84Ga0.16As0.06Sb0.94 is determined to σP=4.6×10−17u2002cm2, which is comparable to values reported in the literature for (AlGaIn)(AsP)-based lasers emitting at 1.5 μm. The losses in the active region were found to increase linearly with increasing number of quantum wells at a rate of 1.5u2002cm−1 per quantum well, whereas the losses in t...

High-power 1.9-/spl mu/m diode laser arrays with reduced far-field angle

High-power 1.91-mum (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam divergence of 44deg full-width at half-maximum. For single emitters, a continuous-wave (CW) output power of nearly 2 W has been observed. We have achieved 16.9 W in CW mode at a heat sink temperature of 20degC. The efficiencies of more than 25% are among the highest values reported so far for GaSb-based diode lasers, and allow the use of passively cooled and, thus, less expensive heat sink technologies

Photoluminescence of InAs/AlSb single quantum wells

A photoluminescence study of InAs/AlSb single quantum well structures with a width varying between 20 and 5 nm is presented. Using Fourier‐transform spectroscopy, the spatially indirect radiative recombination is observed. Excitation of the photoluminescence at 1.32 μm instead of excitation in the visible leads to broadening and blueshifting of the spectra. This behavior is explained by a photoinduced increase of the electron concentration. The optically induced blueshift of the low energy onset of the spectra is attributed to screening of an acceptor level in the AlSb barrier near the InAs/AlSb interface, located about 80 meV above the AlSb valence band maximum. The blueshift of the high energy of the luminescence spectra is limited to a transition energy of 420 meV, providing evidence for the existence of a deep level in the AlSb barriers.