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Publication


Featured researches published by J. Stahl.


Applied Physics Letters | 2003

Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for “type inversion”

I. Pintilie; E. Fretwurst; G. Lindström; J. Stahl

Radiation-induced defects in silicon diodes were investigated after exposure to high doses of Co60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in oxygen-enriched material while it is the main cause for the space charge sign inversion effect observed in standard float-zone material.


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2003

Superior radiation tolerance of thin epitaxial silicon detectors

G. Kramberger; D. Contarato; E. Fretwurst; F. Hönniger; G. Lindström; I. Pintilie; R. Röder; A. Schramm; J. Stahl


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2003

Results on defects induced by 60Co gamma irradiation in standard and oxygen-enriched silicon

I. Pintilie; E. Fretwurst; G. Lindström; J. Stahl


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2006

Stable radiation-induced donor generation and its influence on the radiation tolerance of silicon diodes

I. Pintilie; M. Buda; E. Fretwurst; G. Lindström; J. Stahl


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2004

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

J. Härkönen; Esa Tuovinen; Panja Luukka; E. Tuominen; K. Lassila-Perini; P. Mehtälä; S. Nummela; J. Nysten; A. Zibellini; Z. Li; E. Fretwurst; G. Lindstroem; J. Stahl; F. Hönniger; V. Eremin; A. Ivanov; E. Verbitskaya; Paula Heikkilä; Victor Ovchinnikov; Marko Yli-Koski; P. Laitinen; A. Pirojenko; I. Riihimäki; A. Virtanen


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2003

Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation

E. Fretwurst; G. Lindström; J. Stahl; I. Pintilie; Z. Li; J. Kierstead; E. Verbitskaya; R. Röder


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2005

Radiation-induced donor generation in epitaxial and Cz diodes

I. Pintilie; M. Buda; E. Fretwurst; F. Hönniger; G. Lindström; J. Stahl


Physica B-condensed Matter | 2003

Second-order generation of point defects in highly irradiated float zone silicon: annealing studies

I. Pintilie; E. Fretwurst; G. Kramberger; G. Lindstroem; Z. Li; J. Stahl


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2003

Deep defect levels in standard and oxygen enriched silicon detectors before and after 60Co-γ-irradiation

J. Stahl; E. Fretwurst; G. Lindström; I. Pintilie


Physica B-condensed Matter | 2003

Radiation hardness of silicon: a challenge for defect engineering

J. Stahl; E. Fretwurst; G. Lindstroem; I. Pintilie

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Z. Li

Brookhaven National Laboratory

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E. Verbitskaya

Russian Academy of Sciences

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J. Kierstead

Brookhaven National Laboratory

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