J. Tobola

Importance of relativistic effects in electronic structure and thermopower calculations forMg2Si,Mg2Ge, andMg2Sn

We present a theoretical study of the influence of relativistic effects on the electronic band structure and thermopower of Mg

STUDY OF ELECTRON, PHONON AND CRYSTAL STABILITY VERSUS THERMOELECTRIC PROPERTIES IN Mg2X (X = Si, Sn) COMPOUNDS AND THEIR ALLOYS

{}_{2}X

The electronic structure of MxMo6Se8−δ Chevrel phases with defects

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Theoretical study of structural stability and magnetism in the Pd3Mn antiphase

X=

Electrical transport measurements and electronic structure calculations on doped half-Heusler FeVSb

Si, Ge, Sn) semiconductors. The full potential Korringa-Kohn-Rostoker (KKR) method is used, and a detailed comparison between the fully relativistic and semirelativistic electronic structure features is done. We show that the spin-orbit (S-O) interaction splits the valence band at

Electronic structure of MnSi0.7Al1.3 and related transition metal alloys with the TiSi2 structure

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Transport in doped skutterudites : Ab initio electronic structure calculations

point in good agreement with the experimental data, and this effect strongly depends on

Effect of substitutions and defects in half-Heusler FeVSb studied by electron transport measurements and KKR-CPA electronic structure calculations

X

Thermoelectric Properties and Electronic Structure of Bi- and Ag-Doped Mg2Si1−xGex Compounds

atom. The S-O modifications of the topology of the

Electronic structure and thermoelectric properties ofn- andp-type SnSe from first-principles calculations

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