J. Tworzydlo

Sub-Poissonian Shot Noise in Graphene

We calculate the mode-dependent transmission probability of massless Dirac fermions through an ideal strip of graphene (length L, width W, no impurities or defects), to obtain the conductance and shot noise as a function of Fermi energy. We find that the minimum conductivity of order e^2/h at the Dirac point (when the electron and hole excitations are degenerate) is associated with a maximum of the Fano factor (the ratio of noise power and mean current). For short and wide graphene strips the Fano factor at the Dirac point equals 1/3, three times smaller than for a Poisson process. This is the same value as for a disordered metal, which is remarkable since the classical dynamics of the Dirac fermions is ballistic.

One-parameter scaling at the dirac point in graphene.

We numerically calculate the conductivity sigma of an undoped graphene sheet (size L) in the limit of a vanishingly small lattice constant. We demonstrate one-parameter scaling for random impurity scattering and determine the scaling function beta(sigma)=dlnsigma/dlnL. Contrary to a recent prediction, the scaling flow has no fixed point (beta>0) for conductivities up to and beyond the symplectic metal-insulator transition. Instead, the data support an alternative scaling flow for which the conductivity at the Dirac point increases logarithmically with sample size in the absence of intervalley scattering--without reaching a scale-invariant limit.

Theory of the topological anderson insulator.

We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p2 sigma(z) to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.

Quantum-to-classical crossover of quasibound states in open quantum systems

In the semiclassical limit of open ballistic quantum systems, we demonstrate the emergence of instantaneous decay modes guided by classical escape faster than the Ehrenfest time. The decay time of the associated quasibound states is smaller than the classical time of flight. The remaining long-lived quasibound states obey random-matrix statistics, renormalized in compliance with the recently proposed fractal Weyl law for open systems [W.T. Lu, S. Sridhar, and M. Zworski, Phys. Rev. Lett. 91, 154101 (2003)]. We validate our theory numerically for a model system, the open kicked rotator.

Majorana bound states without vortices in topological superconductors with electrostatic defects

Vortices in two-dimensional superconductors with broken time-reversal and spin-rotation symmetry can bind states at zero excitation energy. These so-called Majorana bound states transform a thermal insulator into a thermal metal and may be used to encode topologically protected qubits. We identify an alternative mechanism for the formation of Majorana bound states, akin to the way in which Shockley states are formed on metal surfaces: An electrostatic line defect can have a pair of Majorana bound states at the end points. The Shockley mechanism explains the appearance of a thermal metal in vortex-free lattice models of chiral p-wave superconductors and (unlike the vortex mechanism) is also operative in the topologically trivial phase.

Dynamical model for the quantum-to-classical crossover of shot noise.

We use the open kicked rotator to model the chaotic scattering in a ballistic quantum dot coupled by two point contacts to electron reservoirs. By calculating the system-size-over-wave-length dependence of the shot-noise power we study the crossover from wave to particle dynamics. Both a fully quantum-mechanical and a semiclassical calculation are presented. We find numerically in both approaches that the noise power is reduced exponentially with the ratio of Ehrenfest time and dwell time, in agreement with analytical predictions.

Non-Cayley-tree model for quasiparticle decay in a quantum dot

The decay of a quasiparticle in a confined geometry, resulting from electron-electron interactions, has been mapped onto the single-electron problem of diffusion on a Cayley tree discussed by Altshuler et al. [Phys. Rev. Lett. 78, 2803 (1997)]. We study an alternative model that captures the strong correlations between the self-energies of different excitations with the same number of quasiparticles. The model has a recursion relation for the single-particle density of states that is markedly different from that of the Cayley tree. It remains tractable enough such that sufficiently large systems can be studied to observe a breakdown of the golden rule of perturbation theory with decreasing excitation energy.

Electronic Shot Noise in Fractal Conductors

By solving a master equation in the Sierpiński lattice and in a planar random-resistor network, we determine the scaling with size L of the shot noise power P due to elastic scattering in a fractal conductor. We find a power-law scaling P proportional, variantL;{d_{f}-2-alpha}, with an exponent depending on the fractal dimension d_{f} and the anomalous diffusion exponent alpha. This is the same scaling as the time-averaged current I[over ], which implies that the Fano factor F=P/2eI[over ] is scale-independent. We obtain a value of F=1/3 for anomalous diffusion that is the same as for normal diffusion, even if there is no smallest length scale below which the normal diffusion equation holds. The fact that F remains fixed at 1/3 as one crosses the percolation threshold in a random-resistor network may explain recent measurements of a doping-independent Fano factor in a graphene flake.

Disorder and magnetic-field-induced breakdown of helical edge conduction in an inverted electron-hole bilayer

We calculate the conductance of a two-dimensional bilayer with inverted electron-hole bands to study the sensitivity of the quantum spin Hall insulator (with helical edge conduction) to the combination of electrostatic disorder and a perpendicular magnetic field. The characteristic breakdown field for helical edge conduction splits into two fields with increasing disorder, a field Bc for the transition into a quantum Hall insulator (supporting chiral edge conduction) and a smaller field B?c for the transition to bulk conduction in a quasimetallic regime. The spatial separation of the inverted bands, typical for broken-gap InAs/GaSb quantum wells, is essential for the magnetic-field-induced bulk conduction—there is no such regime in HgTe quantum wells.

Switching of electrical current by spin precession in the first Landau level of an inverted-gap semiconductor

We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a one-dimensional pathway. The restriction of the electron motion to a single spatial dimension ensures that all electrons experience the same amount of precession in a parallel magnetic field, so that the full electrical current can be switched on and off. As an example, we calculate the magnetoconductance of a p-n interface in a HgTe quantum well and show how it can be used to measure the spin precession due to bulk inversion asymmetry.