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Dive into the research topics where J. Vyskočil is active.

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Featured researches published by J. Vyskočil.


international conference on transparent optical networks | 2009

Diagnostic and characterization of the VCSEL diodes based on GaSb

Jaroslav Cihelka; Irena Matulkova; J. Vyskočil; Zdenek Zelinger; Svatopluk Civiš

VCSEL (Vertical-Cavity Surface-Emitting Laser) diodes are the youngest members of the semiconductor laser diode family. The main target of our work is focused on the modally characterization and the measurement of the basic properties (threshold current, spectral range of the laser emission, the current tunability) of the three VCSEL diode based on GaSb matrix, which are emitting in the infrared region around 4250 cm−1. We used high resolution FTIR spectrometer Bruker IFS 120 HR with the maximum resolution 0.0035 cm−1 in the emission setup for the laser diagnostic research. The spectra of atmospheric pollutants like methane, carbon mono-oxide and ammonia, which have several absorption lines in studied spectral range have been measured using vertical cavity surface emitting lasers for the first time. Lasers were also used for investigation of these gases by absorption spectroscopy.


Journal of Crystal Growth | 2010

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

A. Hospodková; E. Hulicius; J. Pangrác; J. Oswald; J. Vyskočil; K. Kuldová; T. Šimeček; P. Hazdra; Ondřej Caha


Journal of Crystal Growth | 2008

Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

E. Hulicius; J. Oswald; J. Pangrác; J. Vyskočil; A. Hospodková; K. Kuldová; K. Melichar; T. Šimeček


Journal of Crystal Growth | 2015

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

A. Hospodková; J. Pangrác; J. Vyskočil; Markéta Zíková; J. Oswald; Philomela Komninou; E. Hulicius


Applied Surface Science | 2014

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

A. Hospodková; J. Pangrác; Markéta Zíková; J. Oswald; J. Vyskočil; Philomela Komninou; J. Kioseoglou; Nikoleta Florini; E. Hulicius


Journal of Crystal Growth | 2011

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

A. Hospodková; J. Pangrác; J. Oswald; P. Hazdra; K. Kuldová; J. Vyskočil; E. Hulicius


Journal of Crystal Growth | 2015

Growth and properties of AIIIBV QD structures for intermediate band solar cells

J. Vyskočil; P. Gladkov; Otto Petříček; A. Hospodková; J. Pangrác


Journal of Crystal Growth | 2008

Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots

A. Hospodková; J. Pangrác; J. Oswald; E. Hulicius; K. Kuldová; J. Vyskočil; K. Melichar; T. Šimeček


Journal of Crystal Growth | 2017

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

J. Vyskočil; A. Hospodková; Otto Petříček; J. Pangrác; Markéta Zíková; J. Oswald; Aliaksei Vetushka


Physica B-condensed Matter | 2016

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

A. Hospodková; J. Oswald; J. Pangrác; K. Kuldová; Markéta Zíková; J. Vyskočil; E. Hulicius

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A. Hospodková

Academy of Sciences of the Czech Republic

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J. Pangrác

Academy of Sciences of the Czech Republic

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J. Oswald

Academy of Sciences of the Czech Republic

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E. Hulicius

Academy of Sciences of the Czech Republic

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Markéta Zíková

Czech Technical University in Prague

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K. Kuldová

Academy of Sciences of the Czech Republic

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P. Hazdra

Czech Technical University in Prague

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T. Šimeček

Academy of Sciences of the Czech Republic

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Philomela Komninou

Aristotle University of Thessaloniki

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K. Melichar

Academy of Sciences of the Czech Republic

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