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Featured researches published by J. Xia.


Laser Physics | 2010

Dual-wavelength laser operation at 1064 and 914 nm in two Nd:YVO4 crystals

Y. F. Lü; J. Xia; X. H. Zhang; Z. T. Liu; J. F. Chen

We present for the first time a dual-wavelength laser operation at 1064 and 914 nm in two NdYVO4 crystals. A 879 nm laser diode is used to pump the first Nd:YVO4 crystal emitting at 914 nm, and the second Nd:YVO4 laser emitting at 1064 nm intracavity pumped at 914 nm. A total output power of 4.28 W at the two fundamental wavelengths was achieved at the absorbed pump power of 13.8 W. The M2 values for 914 and 1064 nm lights at the maximum output power were found to be around 1.3 and 1.1, respectively.


Laser Physics | 2010

All solid-state continuous-wave Nd:YAG laser at 1319 and 659.5 nm under direct 885 nm pumping

Y. F. Lü; X. H. Zhang; J. Xia; X. D. Yin; L. Bao; Hui Quan

The continuous-wave high efficiency laser emission of Nd:YAG at the fundamental wavelength of 1319 nm and its 659.5-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 885 nm (on the 4F3/2 → 4I13/2 transition). An end-pumped Nd:YAG crystal yielded 9.1 W at 1319 nm of continuous-wave output power for 18.2 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power is 0.55. Furthermore, 5.2 W 659.5 nm red light is acquired by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 0.286. Comparative results obtained for the pump with diode laser at 808 nm (on the 4F5/2 → 4I13/2 transition) are given in order to prove the advantages of the 885 nm wavelength pumping.


Laser Physics | 2010

1064 nm Nd:YAG laser intracavity pumped at 946 nm

Y. F. Lü; J. Xia; X. H. Zhang

We present for the first time a Nd:YAG laser emitting at 1064 nm intracavity pumped by a 946 nm diode-pumped Nd:YAG laser. A 885 nm laser diode is used to pump the first Nd:YAG crystal emitting at 946 nm, and the second Nd:YAG laser emitting at 1064 nm intracavity pumped at 946 nm. We achieved an output power of 7.97 W at 1064 nm for an absorbed pump power at 946 nm of 9.55 W, corresponding to an optical efficiency of 83.4%. The beam quality M2 quality factor is about 1.1 at the maximum output power.


Laser Physics | 2009

Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pumping

Y. F. Lü; X. H. Zhang; J. Xia; X. D. Yin; A. F. Zhang; L. Bao; D. Wang; Hui Quan

We report an efficient laser emission on the 1341 nm 4F3/2 to 4I13/2 transition in Nd:GdVO4 under the pump with diode lasers at 888 nm. Continuous wave (CW) 6.58 W output power at 1341 nm is obtained under 18.3 W of incident pump power; the slope efficiency with respect to the incident pump power was 45.1%. Moreover, intracavity frequency doubling with LiB3O5 (LBO) nonlinear crystal yielded 1.77 W of red light at 670.5 nm.


Laser Physics Letters | 2009

Highly efficient continuous-wave 912 nm Nd:GdVO4 laser emission under direct 880 nm pumping

Y. F. Lü; X. H. Zhang; J. Xia; A.F. Zhang; X.D. Yin; L. Bao


Laser Physics Letters | 2010

1064 nm Nd:YAG laser intracavity pumped at 946 nm and sum-frequency mixing for an emission at 501 nm

Y. F. Lü; X. H. Zhang; J. Xia; G.Y. Jin; Jun-Guang Wang; X.D. Yin; A.F. Zhang


Laser Physics Letters | 2008

Quasi‐three‐level Nd:LuVO4 laser under diode pumping directly into the emitting level

Y.F. Lü; J. Xia; X. H. Zhang


Optics Communications | 2009

High-efficiency Nd:GdVO4 laser at 1341 nm under 880 nm diode laser pumping into the emitting level

Y. F. Lü; J. Xia; Jun-Guang Wang; Guan-Cheng Sun; X. H. Zhang; An-Feng Zhang; Xiao-Dong Yin; L. Bao; Hui Quan


Optics Communications | 2009

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

Y. F. Lü; J. Xia; Jun-Guang Wang; X. H. Zhang; L. Bao; Hui Quan; Xiao-Dong Yin


Applied Physics B | 2010

Highly efficient continuous-wave intracavity frequency-doubled Nd:YVO4-LBO laser at 457 nm under diode pumping into the emitting level 4F3/2

Y. F. Lü; X. H. Zhang; X. D. Yin; J. Xia; A. F. Zhang; J. Q. Lin

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X. H. Zhang

University of the Sciences

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Y. F. Lü

University of the Sciences

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L. Bao

University of the Sciences

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Hui Quan

University of the Sciences

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Jun-Guang Wang

University of the Sciences

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D. Wang

University of the Sciences

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G.Y. Jin

University of the Sciences

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Guan-Cheng Sun

University of the Sciences

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J. F. Chen

University of the Sciences

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J. Q. Lin

University of the Sciences

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