Jacob Ruf

Quantifying electronic correlation strength in a complex oxide: A combined DMFT and ARPES study of LaNiO 3

The electronic correlation strength is a basic quantity that characterizes the physical properties of materials such as transition metal oxides. Determining correlation strengths requires both precise definitions and a careful comparison between experiment and theory. In this paper, we define the correlation strength via the magnitude of the electron self-energy near the Fermi level. For the case of LaNiO3, we obtain both the experimental and theoretical mass enhancements m/m by considering high resolution angle-resolved photoemission spectroscopy (ARPES) measurements and density functional+dynamical mean field theory (DFT+DMFT) calculations.We use valence-band photoemission data to constrain the free parameters in the theory and demonstrate a quantitative agreement between the experiment and theory when both the realistic crystal structure and strong electronic correlations are taken into account. In addition, by considering DFT+DMFT calculations on epitaxially strained LaNiO3, we find a strain-induced evolution of m/m in qualitative agreement with trends derived from optics experiments. These results provide a benchmark for the accuracy of the DFT+DMFT theoretical approach, and can serve as a test case when considering other complex materials. By establishing the level of accuracy of the theory, this work also will enable better quantitative predictions when engineering new emergent properties in nickelate heterostructures.

Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Revealing the hidden heavy Fermi liquid in CaRuO 3

The perovskite ruthenate has attracted considerable interest due to reports of possible non-Fermi-liquid behavior and its proximity to a magnetic quantum critical point, yet its ground state and electronic structure remain enigmatic. Here we report the first measurements of the Fermi surface and quasiparticle dispersion in CaRuO3 through a combination of oxide molecular beam epitaxy and in situ angle-resolved photoemission spectroscopy. Our results reveal a complex and anisotropic Fermi surface consisting of small electron pockets and straight segments, consistent with the bulk orthorhombic crystal structure with large octahedral rotations. We observe a strongly band-dependent mass renormalization, with prominent heavy quasiparticle bands which lie close to the Fermi energy and exhibit strong temperature dependence. These results are consistent with a heavy Fermi liquid with a complex Fermiology and small hybridization gaps near the Fermi energy. Our results provide a unified framework for explaining previous experimental results on CaRuO3, such as its unusual optical conductivity, and demonstrate the importance of octahedral rotations in determining the quasiparticle band structure, and electron correlations in complex transition metal oxides.

Demystifying the growth of superconducting Sr2RuO4 thin films

We report the growth of superconducting Sr2RuO4 thin films by molecular-beam epitaxy on (110) NdGaO3 substrates with transition temperatures of up to 1.8 K. We calculate and experimentally validate a thermodynamic growth window for the adsorption-controlled growth of superconducting Sr2RuO4 epitaxial thin films. The growth window for achieving superconducting Sr2RuO4 thin films is narrow in growth temperature, oxidant pressure, and ruthenium-to-strontium flux ratio.We report the growth of superconducting Sr2RuO4 thin films by molecular-beam epitaxy on (110) NdGaO3 substrates with transition temperatures of up to 1.8 K. We calculate and experimentally validate a thermodynamic growth window for the adsorption-controlled growth of superconducting Sr2RuO4 epitaxial thin films. The growth window for achieving superconducting Sr2RuO4 thin films is narrow in growth temperature, oxidant pressure, and ruthenium-to-strontium flux ratio.

Lifshitz transition from valence fluctuations in YbAl 3

In mixed-valent Kondo lattice systems, such as YbAl3, interactions between localized and delocalized electrons can lead to fluctuations between two different valence configurations with changing temperature or pressure. The impact of this change on the momentum-space electronic structure is essential for understanding their emergent properties, but has remained enigmatic. Here, by employing a combination of molecular beam epitaxy and in situ angle-resolved photoemission spectroscopy we show that valence fluctuations can lead to dramatic changes in the Fermi surface topology, even resulting in a Lifshitz transition. As the temperature is lowered, a small electron pocket in YbAl3 becomes completely unoccupied while the low-energy ytterbium (Yb) 4f states become increasingly itinerant, acquiring additional spectral weight, longer lifetimes, and well-defined dispersions. Our work presents a unified picture of how local valence fluctuations connect to momentum-space concepts such as band filling and Fermi surface topology in mixed valence systems.How the electronic structure of a mixed-valence system changes with respect to local chemical environment remains elusive. Here, Chatterjee et al. show that valence fluctuations of YbAl3 can lead to dramatic changes in the Fermi surface topology in reciprocal space.