Jacob T. Friedlein

A Robust and Tunable Add–Drop Filter Using Whispering Gallery Mode Microtoroid Resonator

We fabricated and theoretically investigated an add-drop filter (ADF) using an on-chip whispering gallery mode (WGM) microtoroid resonator with ultrahigh-quality factor (Q) side coupled to two taper fibers, forming the bus and drop waveguides. The new device design incorporates silica side walls close to the microresonators which not only enable placing the coupling fibers on the same plane with respect to the microtoroid resonator but also provides mechanical stability, leading to an ADF with high drop efficiency and improved robustness to environmental perturbations. We show that this new device can be thermally tuned to drop desired wavelengths from the bus without significantly affecting the drop efficiency, which is around 57%.

Microsecond Response in Organic Electrochemical Transistors: Exceeding the Ionic Speed Limit

Organic electrochemical transistors (OECTs) are transistors that can have extrinsic transconductances as high as 400 S m-1 , but they typically have response times on the order of 1 ms or longer. These response speeds are limited by ion transport. It is shown that OECTs can exceed the ionic response speed by a factor of 30 when operated in a high-speed bias regime.

Influence of disorder on transfer characteristics of organic electrochemical transistors

Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.

High‐Performance Vertical Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m-1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices.

Subthreshold Operation of Organic Electrochemical Transistors for Biosignal Amplification

Abstract With a host of new materials being investigated as active layers in organic electrochemical transistors (OECTs), several advantageous characteristics can be utilized to improve transduction and circuit level performance for biosensing applications. Here, the subthreshold region of operation of one recently reported high performing OECT material, poly(2‐(3,3′‐bis(2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy)‐[2,2′‐bithiophen]‐5‐yl)thieno[3,2‐b]thiophene), p(g2T‐TT) is investigated. The materials high subthreshold slope (SS) is exploited for high voltage gain and low power consumption. An ≈5× improvement in voltage gain (A V) for devices engineered for equal output current and 370× lower power consumption in the subthreshold region, in comparison to operation in the higher transconductance (g m), superthreshold region usually reported in the literature, are reported. Electrophysiological sensing is demonstrated using the subthreshold regime of p(g2T‐TT) devices and it is suggested that operation in this regime enables low power, enhanced sensing for a broad range of bioelectronic applications. Finally, the accessibility of the subthreshold regime of p(g2T‐TT) is evaluated in comparison with the prototypical poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and the role of material design in achieving favorable properties for subthreshold operation is discussed.

A better understanding of organic electrochemical transistors for biosensing applications (Presentation Recording)

Due to their biocompatibility, high transconductance, and low operating voltages, organic electrochemical transistors (OECTs) are promising platforms for biosensing applications. They have been used for measuring enzymes such as glucose and lactate, detecting disruptions of epithelial cell integrity, and amplifying epileptic voltage signals in rat brains. Accelerating the development of OECTs in this diverse range of potential applications, and those unforeseen, requires continued investigation of the device physics and material properties. In this presentation, we will describe our work to better understand OECT behavior, and we will discuss how this understanding can be used to develop more effective biosensors.

Holographic spectral beamsplitting for increased organic photovoltaic conversion efficiency

Thermodynamic principles limit the conversion efficiency of a single bandgap organic photovoltaic (OPV) cell to 33%1 . In order to increase efficiency, multiple OPV devices can be combined to cover a larger spectral range of the incident solar spectrum. The most common way of doing this is to mount multiple bandgap cells in tandem or series. However, stacked multijunction systems have limitations, such as current-matching constraints and optical quality of the OPV layer. A separated arrangement with spectrum splitting is a promising alternative to the stacked tandem approach. In this paper, two organic photovoltaic cells with complementary EQE curves are integrated into a holographic spectrum splitting module. The highest possible conversion efficiency of this two-cell combination is quantified assuming an ideal spectral filter as a reference. A spectrum splitting module is built, consisting of a reflective hologram oriented at an angle to split the incident beam into two spectral bands. The holographic beamsplitting system is assembled and studied under a solar simulator. Power output and conversion efficiency of the holographic spectrum splitting system is evaluated in terms of Improvement over Best Bandgap (IoBB) of the two-cell combination. The combined system has a measured improvement over its best single cell of 12.30% under a solar simulator lamp and a predicted improvement of 16.39% under sunlight.

Optical method for making spatially and temporally resolved measurements of the hole concentration in organic electrochemical transistors

Electrochemical reduction and oxidation of PEDOT:PSS are used to modulate the channel current in organic electrochemical transistors (OECTs). In addition to changing PEDOT conductivity over more than 4 orders of magnitude, these redox reactions cause a shift in the PEDOT:PSS absorption spectrum. In this work we have used this shift in the absorption spectrum to make spatially and temporally resolved measurements of the redox state of PEDOT:PSS. By applying these measurements to the PEDOT:PSS in an OECT channel, we have shown that the redox state of the PEDOT:PSS is not constant along the channel during transistor operation. Furthermore, we have shown that the time constant of the optical transition is significantly larger near the transistor source than it is near the transistor drain. These results are not considered in existing models of the OECT transient response, and they may lead to a better understanding of geometry-performance relationships in OECTs.