Jae Ho Bahng

Direct investigation on conducting nanofilaments in single-crystalline Ni/NiO core/shell nanodisk arrays

We report resistive switching characteristics of single-crystalline Ni/NiO core/shell nanodisk arrays, in which the conducting filaments are highly localized on the surface of nanostructure. The local current distributions observed in such a single-grained nanodisk demonstrate that the contact area and the contact time between the conductive tip of conducting atomic force microscopy and the surface of nanodisk critically influence the voltage-stress-induced electroforming behaviors of nanofilaments in NiO switching nanoblocks. These contact parameters, such as the contact area and the contact time, are interpreted to the electrode size and the voltage-stress time for the formation of filaments in metal oxides.

Type-II interband transition of ZnS0.78Te0.22/ZnTe single quantum wells

Optical properties of ZnS0.78Te0.22/ZnTe single quantum wells grown on GaAs (100) substrates by hot wall epitaxy technique with varying the ZnS0.78Te0.22 well width from 0.3 to 1.8 nm were investigated by photoluminescence (PL) measurements at low temperature and by temperature-dependent PL measurements. PL results show the evidence of type-II transition and their peak energy shifts to higher energies as the ZnS0.78Te0.22 well width decreases. In addition, temperature-dependent PL measurements show the increase of the activation energy as the well thickness decreases, indicating the increase of confinement effect. This study makes it possible to introduce proper band diagram for this structure, and can give very useful information on their device applications.

Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks.

A simple procedure for the fabrication of sub-10 nm scale Si nanopillars in a 2-D array using reactive ion etching with 8 nm Co nanoparticles as etch masks is demonstrated. The obtained Si nanopillars are single crystalline tapered pillar structures of 5 nm (top) x 8 nm (bottom) with a density of approximately 4 x 10(10) pillars cm(-2) on the substrate, similar to the density of Co nanoparticles distributed before the ion etching process. The uniform spatial distribution of the Si nanopillars can also be patterned into desired positions. Our fabrication method is straightforward and requires mild process conditions, which can be extended to patterned 2-D arrays of various Si nanostructures.

Simple Fabrication of High Density Quantum Dot Arrays Using Anodic Aluminum Oxide Mask

We fabricated quantum dot arrays using anodic alumina mask. We grew an alumina template on Si wafers by two-step anodization. The porous alumina template thus grown is used as a mask for metal deposition. After thermal evaporation and removal of the mask, we fabricated the quantum dot arrarys on a Si substrate. Using this template-assisted method we obtained a high density array of quantum dots in a large scale. These quantum dots have a narrow size distribution which can be easily controlled by a pore widening of templates from 20 to 60 nm.

Controlled Growth of Multi-walled Carbon Nanotubes Using Arrays of Ni Nanoparticles

We have investigated the optimal growth conditions of carbon nanotubes (CNTs) using the chemical vapor deposition and the Ni nanoparticle arrays. The diameter of the CNT is shown to be controlled down to below 20 ㎚ by changing the size of Ni particle. The position and size of Ni particles are controlled continuously by using wafer-scale compatible methods such as lithography, ion-milling, and chemical etching. Using optimal growth conditions of temperature, carbon feedstock, and carrier gases, we have demonstrated that an individual CNT can be grown from each Ni nanoparticle with almost 100% probability over wide area of SiO₂/Si wafer. The position, diameter, and wall thickness of the CNT are shown to be controlled by adjusting the growth conditions.