Jagir S. Multani

In-process measurement of memory properties of MNOS devices

A simple, easy to useC-Vtechnique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlation of charge retention properties of memory nitride-oxide capacitors before metallization with finished test transistors after metallization has been found.