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Dive into the research topics where Jakub Zalesak is active.

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Featured researches published by Jakub Zalesak.


Journal of Applied Crystallography | 2016

Combinatorial refinement of thin-film microstructure, properties and process conditions: iterative nanoscale search for self-assembled TiAlN nanolamellae

Jakub Zalesak; Juraj Todt; Reinhard Pitonak; Arno Köpf; R. Weißenbacher; Bernhard Sartory; Manfred Burghammer; Rostislav Daniel; Jozef Keckes

A novel iterative combinatorial nanoscale search based on the application of cross-sectional synchrotron X-ray nanodiffraction and cross-sectional nanoindentation is used to refine the relationship between deposition conditions, microstructure and properties of nanostructured TiAlN thin films. Using three iterative steps, a nanolamellar TiAlN thin film with a maximal hardness of ∼36u2005GPa is developed.


Journal of Applied Physics | 2015

Ab initio studies on the adsorption and implantation of Al and Fe to nitride materials

H. Riedl; Jakub Zalesak; M. Arndt; Peter Polcik; David Holec; P.H. Mayrhofer

The formation of transfer material products on coated cutting and forming tools is a major failure mechanism leading to various sorts of wear. To describe the atomistic processes behind the formation of transfer materials, we use ab initio to study the adsorption energy as well as the implantation barrier of Al and Fe atoms for (001)-oriented surfaces of TiN, Ti0.50Al0.50N, Ti0.90Si0.10N, CrN, and Cr0.90Si0.10N. The interactions between additional atoms and nitride-surfaces are described for pure adhesion, considering no additional stresses, and for the implantation barrier. The latter, we simplified to the stress required to implant Al and Fe into sub-surface regions of the nitride material. The adsorption energies exhibit pronounced extrema at high-symmetry positions and are generally highest at nitrogen sites. Here, the binary nitrides are comparable to their ternary counterparts and the average adhesive energy is higher (more negative) on CrN than TiN based systems. Contrary, the implantation barrier ...


Acta Materialia | 2016

Cross-sectional structure-property relationship in a graded nanocrystalline Ti1−xAlxN thin film

Jakub Zalesak; M. Bartosik; Rostislav Daniel; Christian Mitterer; Christina Krywka; Daniel Kiener; P.H. Mayrhofer; J. Keckes


Acta Materialia | 2017

Grain boundary design of thin films: Using tilted brittle interfaces for multiple crack deflection toughening

Rostislav Daniel; Michael Meindlhumer; Walter Baumegger; Jakub Zalesak; Bernhard Sartory; Manfred Burghammer; Christian Mitterer; Jozef Keckes


Materials & Design | 2016

Fracture toughness enhancement of brittle nanostructured materials by spatial heterogeneity: A micromechanical proof for CrN/Cr and TiN/SiOx multilayers

Rostislav Daniel; Michael Meindlhumer; Jakub Zalesak; Bernhard Sartory; Angelika Zeilinger; Christian Mitterer; Jozef Keckes


Surface & Coatings Technology | 2016

Al-rich cubic Al0.8Ti0.2N coating with self-organized nano-lamellar microstructure: Thermal and mechanical properties

Juraj Todt; Jakub Zalesak; Rostislav Daniel; Reinhard Pitonak; Arno Köpf; R. Weißenbacher; Bernhard Sartory; Christian Mitterer; Jozef Keckes


Materials & Design | 2016

Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

Michael Reisinger; Jakub Zalesak; Rostislav Daniel; M. Tomberger; J.K. Weiss; A.D. Darbal; M. Petrenec; Johannes Zechner; I. Daumiller; Werner Ecker; Bernhard Sartory; Jozef Keckes


Acta Materialia | 2017

Peculiarity of self-assembled cubic nanolamellae in the TiN/AlN system: Epitaxial self-stabilization by element deficiency/excess

Jakub Zalesak; David Holec; Igor Matko; M. Petrenec; Bernhard Sartory; Nikola Koutná; Rostislav Daniel; Reinhard Pitonak; Jozef Keckes


Acta Materialia | 2018

30 nm X-ray focusing correlates oscillatory stress, texture and structural defect gradients across multilayered TiN-SiOx thin film

Jozef Keckes; Rostislav Daniel; Juraj Todt; Jakub Zalesak; Bernhard Sartory; Stefan Braun; Jürgen Gluch; Martin Rosenthal; Manfred Burghammer; Christian Mitterer; Sven Niese; Adam Kubec


Materials & Design | 2016

イオンビーム層除去法と歳差電子回折によって評価したSi(111)基板上のAl_xGa_1xNヘテロ構造の断面応力分布【Powered by NICT】

M Reisinger; Jakub Zalesak; Rostislav Daniel; M. Tomberger; J.K. Weiss; A.D. Darbal; M. Petrenec; Johannes Zechner; I. Daumiller; Werner Ecker; Bernhard Sartory; Jozef Keckes

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Rostislav Daniel

University of West Bohemia

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Christian Mitterer

Swiss Federal Laboratories for Materials Science and Technology

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Michael Meindlhumer

Austrian Academy of Sciences

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Juraj Todt

Austrian Academy of Sciences

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Manfred Burghammer

European Synchrotron Radiation Facility

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Daniel Kiener

Austrian Academy of Sciences

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David Holec

Vienna University of Technology

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P.H. Mayrhofer

Vienna University of Technology

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