James D. Kinnison

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

Over the past 27 years, or so, increased concern over single-event effects (SEEs) in spacecraft systems has resulted in research, development, and engineering activities centered around a better understanding of the space radiation environment, SEE predictive methods, ground test protocols, and test facility developments. This research has led to fairly well developed methods for assessing the impact of the space radiation environment on systems that contain SEE sensitive devices and the development of mitigation strategies either at the system or device level. However, as new technology has emerged, these ground test and predictive methods have certain short falls.

Current single event effect test results for candidate spacecraft electronics

We present both proton and heavy ion single event effect (SEE) ground test results for candidate spacecraft electronics. A variety of digital and analog devices were tested, including EEPROMs, DRAMs, and DC-DC converters.

Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co/sup 60/ irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken.

High-energy neutron spectroscopy with thick silicon detectors.

Abstract Kinnison, J. D., Maurer, R. H., Roth, D. R. and Haight, R. C. High-Energy Neutron Spectroscopy with Thick Silicon Detectors. Radiat. Res. 159, 154–160 (2003). The high-energy neutron component of the space radiation environment in thick structures such as the International Space Station contributes to the total radiation dose received by an astronaut. Detector design constraints such as size and mass have limited the energy range of neutron spectrum measurements in orbit to about 12 MeV in Space Shuttle studies. We present a new method for high-energy neutron spectroscopy using small silicon detectors that can extend these measurements to more than 500 MeV. The methodology is based on measurement of the detector response function for high-energy neutrons and inversion of this response function with measured deposition data to deduce neutron energy spectra. We also present the results of an initial shielding study performed with the thick silicon detector system for high-energy neutrons incident on polyethylene.

Single event effect test results for candidate spacecraft electronics

We present both heavy ion and proton single event effect (SEE) ground test results for candidate spacecraft electronics. A variety of digital, analog, and fiber optic devices were tested, including DRAMs, FPGAs and fiber links.

Neutron production from polyethylene and common spacecraft materials

We report experimental measurements of neutron production from collisions of neutron beams with polyethylene blocks simulating tissue at the Los Alamos National Laboratory Neutron Science Center and 1 GeV/amu iron nuclei with spacecraft shielding materials at the Brookhaven National Laboratory AGS.

Radiation characterization of the ADSP2100A digital signal processor

A comprehensive radiation effects characterization of the Analog Devices ADSP2100A digital signal processor for the space environment has been completed using Californium fission fragments, laser light, heavy ions and protons. Results of these investigations led to the design of a latchup immune device that has been characterized with respect to SEU and total dose effects, as well as a thoroughly tested latchup protection and fault tolerant circuit. >

Neutron-induced pion production in silicon-based circuits

We compare deposition spectra from monoenergetic neutron irradiation to CUPID simulations of the same neutron exposures. CUPID does not agree with the experimental data unless pion production is included in the neutron-nucleon interaction. Pion-production events result in slightly more single-event effects (SEEs) for devices with relatively large sensitive volumes and low thresholds for upset but dramatically fewer events for the same sensitive volume when the threshold is high.

Applying new solar particle event models to interplanetary satellite programs

Variability in the models and methods used for single event upset (SEU) calculations in microelectronic memory devices can lead to a range of possible upset rates. In order to compare the Adams 1986 interplanetary solar flare model to a new model proposed by scientists at the Jet Propulsion Laboratory (JPL92) the authors have calculated an array of upset rates using heavy ion and proton data for selected DRAM and SRAM memories and for Actel Field Programmable Gate Arrays (FPGAs). To make more general comparisons of the models the authors have produced a set of engineering curves of predicted upset rates versus hypothetical device cross-section parameters. The results show that use of this more realistic, although still conservative, JPL model can have significant benefits for satellite programs, especially those which must operate continuously during solar particle events. The benefits include more flexibility in model choice, a higher level of confidence in the environment, and potential cost savings by the calculation of less pessimistic SEU rates which allow designers to integrate commercial products into their spacecraft design with the use of Error Detection and Correction (EDAC) schemes. >

Low dose rate space estimates for integrated circuits using real time measurements and linear system theory

From real-time response measurements of the supply currents for some CMOS integrated circuits at various constant dose rates, it was possible to extrapolate time to failure back to spacelike low dose rates. Linear systems theory and convolution combine to give a quantitative way of characterizing the response of a device to radiation at various dose rates. No detailed knowledge of the damage mechanisms is required. Real-time responses during and after radiation provide the necessary information for each dose rate measurement. Reasonably successful extrapolations from accurate generalized response functions can be made to lower dose rates. Proton measurements of the low dose rate response for the ADSP2100 digital signal processor and a SEEQ EEPROM indicate increased survivability. >