James F. Norton

Information‐storage device using surface diodes

A concept for a high‐density memory‐storage device is described. Information is recorded as small implanted p+ (or n+) diodes, formed by a focused ion beam, on the n+ (or p+) surface of a large‐area diode and read by a focused electron beam. Preliminary experimental results using ion implantation through an aperture mask to simulate a focused ion beam, and a scanning electron microscope for readout, demonstrate better than 0.5‐μ bit spacing. Evaluation indicates that 1010 bits/cm2 storage density is possible, with ≳10 Mbits/sec write/read rates, and access times <30 μsec to 1011‐bit data fields.