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Dive into the research topics where James Halvis is active.

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Featured researches published by James Halvis.


Proceedings of SPIE | 1996

Near-room-temperature performance of an SWIR InGaAs/Si hybrid 96 element x 25 TDI high-performance FPA

Richard Mckee; Donald Lampe; James Halvis; Timothy Henricks; Thomas E. Wilson; William E. Kleinhans; Krishna Linga; Michael J. Lange

Performance of a SWIR FPA targeting LANDSAT S/N levels in the near room temperature (> 220 K) is presented. The FPA consists of a 96 X 25 element InGaAs array with 48 (mu) X 48 (mu) photo-voltaic pixels bump-bonded to a Si multiplexer. Cutoff wavelength of an array is tailored from 1.68 (mu) to 2.4 (mu) . The longer cutoff is required for Band 7. The multiplexer design incorporates a CMOS CCD process and is a 96 channel X 25 TDI scanning array with pixel pitch of 48 (mu) cross track by 96 (mu) intrack. Each unit cell uses a Capacitive Trans-Impedance Amplifier) with Correlated Double Sampling. Other notable chip features include electrically selectable TDI modes (0, 1, 8, 16, and 25), forward and reverse scan, and 1 X 1 and 2 X 2 aggregation modes. Timing and biases are self generated by the multiplexer.


Infrared Technology XVIII | 1993

Versatile multimode 320 x 240 / 256 x 256 hybrid InSb infrared focal plane array with selectable snapshot or rolling integration

Thomas E. Wilson; Timothy F. Henricks; James Halvis; Brett D. Rosner; Robert R. Shiskowski

A large area infrared focal plane array was designed for use in a variety of military, dual- mode and commercial applications requiring high sensitivity and resolution. A high performance CMOS switched FET readout multiplexer was developed using standard foundry compatible processing. The array can be operated at frame rates up to 240 Hz in either snapshot or rolling readout mode. Independent variable integration control is included for either mode. Array size is logic selectable to either video format compatible 320 X 240, standard 256 X 256, or the entire 320 X 256. Data is read out sequentially through logic selectable 1, 2 or 4 outputs. A line array mode is included, any line selectable, with variable integration time up to 85% of line time. Each 31 micrometers X 31 micrometers cell has > 2.0 E7 electron integration well, coupled to the output via a charge drain sample and hold to maximize performance and to provide a continuous data stream. On chip bias generation, timing generation and level shifters minimize drive requirements. The silicon multiplexer was hybridized to a InSb detector array for a MWIR imaging demonstration.


Proceedings of SPIE | 1992

High-performance 30 TDI scan reversible MWIR InSb hybrid scanning array with on-focal-plane dynamic-range compression

Timothy F. Henricks; Thomas E. Wilson; D. R. Bishop; James Halvis; Robert R. Shiskowski

This paper details a high performance MWIR scanning array with 30 time delay and integration stages (TDI), forward and reverse scan operation, less than 80 noise electrons per stage, and on focal plane blooming control and dynamic range compression. The 92 column by 30 TDI device is fabricated using hybrid technology with the detector fabricated in InSb and indium bumped to a VLSI/CMOS/CCD silicon readout fabricated in 1.25 micrometers CMOS with two poly and three metal interconnect levels.


Archive | 1991

Clipped dynamic range compression image sensing apparatus

James Halvis; Timothy F. Henricks; Thomas E. Wilson


Archive | 1991

Infrared image detecting device and method

James Halvis


Archive | 2006

Spectral filter for optical sensor

James Halvis; Richard Mckee


Archive | 1986

CCD gate definition process

Nathan Bluzer; James Halvis


Archive | 1987

Solid state gas pressure sensor

James Halvis; Nathan Bluzer; Robert R. Shiskowski


Archive | 1997

Charge coupled device gate structure having narrow effective gaps between gate electrodes

Nathan Bluzer; James Halvis


Archive | 2011

Advanced focal plane array concept for overhead persistent ir applications

Richard Mckee; Richard Madonna; Perry Fath; James Halvis

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