James Mitchell

Optical properties of ZnO and MgZnO nanocrystals below and at the phase separation range

This paper presents studies of the optical properties of MgxZn1−xO nanocrystals below and at the phase transition range where the solubility is limited. For the nanocrystals of Mg composition 0%–30%, the samples were found to consist of the wurtzite structure and exhibited band edge absorption as well as photoluminescence (PL) blueshift of ∼0.25u2002eV. The cold temperature PL of the ZnO nanocrystals exhibits the A-exciton and the bound exciton with values similar to that of the bulk ZnO reference sample. In addition, the PL of the ZnO nanocrystals was found to be dominated by an emission, referred to as the e-PL, at ∼3.32u2002eV that is ∼56u2002meV below the A-exciton. The characteristics of the e-PL agree well with model calculations of an emission that involves a transition of conduction-band electrons to acceptorlike states having an acceptor binding energy of ∼116u2002meV. The room temperature PL exhibited a strong exciton component, which is convoluted with the e-PL. The PL line shapes of the MgxZn1−xO samples of M...

Optical transitions and multiphonon Raman scattering of Cu doped ZnO and MgZnO ceramics

Cu doped ZnO and MgZnO ceramics were created via a process of cold pressing and annealing, and their optical properties and phonon dynamics were studied. It was found that the ceramics exhibit infrared absorption peak energies at 5783 and 5822u2002cm−1, indicative of intraband transitions in a substitutional Cu ion of oxidation state +2. The UV photoluminescence (PL) intensity of the ceramics was found to weaken significantly relative to an undoped sample. The low PL intensity is discussed in terms of the CuxZn1−xO alloy system and the indirect bandgap of the CuO end member, as well as in terms of the nonradiative Cu centers. Due to the weak PL, up to ten LO multiphonons were observed in the Raman spectra, pointing to a strong polaron coupling. The resonance behavior of the highest intensity mode was found to exhibit outgoing resonance characteristics.

Laser direct writing of silicon field effect transistor sensors

We demonstrate a single step technique to fabricate silicon wires for field effect transistor sensors. Boron-doped silicon wires are fabricated using laser direct writing in combination with chemical vapor deposition, which has the advantages of precise control of position, orientation, and length, and in situ doping. The silicon wires can be fabricated to have very rough surfaces by controlling laser operation parameters, and thus, have large surface areas, enabling high sensitivity for sensing. Highly sensitive pH sensing is demonstrated. We expect our method can be expanded to the fabrication of various sensing devices beyond chemical sensors.