James N. Hilfiker

Overview of variable-angle spectroscopic ellipsometry (VASE): I. Basic theory and typical applications

Variable angle spectroscopic ellipsometry (VASE) is important for metrology in several industries, and is a powerful technique for research on new materials and processes. Sophisticated instrumentation and software for VASE data acquisition and analysis is available for the most demanding research applications, while simple to use software enables the use of VASE for routine measurements as well. This article gives a basic introduction to the theory of ellipsometry, references “classic” papers, and shows typical VASE applications. In the following companion paper, more advanced applications are discussed.

Deposition factors and band gap of zinc-blende AlN

Successful deposition of zinc-blende AlN films with thickness up to 1000 A was performed with plasma source molecular beam epitaxy. The films were epitaxial to the Si(001) substrate. The formation of a thin 3C-SiC layer on the Si(001) surface is one of the important factors for the formation of zinc-blende AlN. Evidence for the presence of 3C-SiC is provided by an Auger electron spectroscopy depth profile and a high-resolution transmission electron microscopy plot profile. Spectroscopic ellipsometry was used to determine the optical constants of zinc-blende AlN in the range from 1.85 to 6.5 eV. The extinction coefficient data indicates that zinc-blende AlN is an indirect semiconductor with a band gap of ∼5.34 eV.

Optical properties of bulk and thin-film SrTiO3 on Si and Pt

We have studied the optical properties (complex dielectric function) of bulk SrTiO3 and thin films on Si and Pt using spectroscopic ellipsometry over a very broad spectral range, starting at 0.03 eV [using Fourier transform infrared (FTIR) ellipsometry] to 8.7 eV. In the bulk crystals, we analyze the interband transitions in the spectra to determine the critical-point parameters. To interpret these transitions, we performed band structure calculations based on ab initio pseudopotentials within the local-density approximation. The dielectric function was also calculated within this framework and compared with our ellipsometry data. In the FTIR ellipsometry data, we notice a strong lattice absorption peak due to oxygen-related vibrations. Two longitudinal optic (LO) phonons were also identified. In SrTiO3 films on Si, the refractive index below the band gap decreases with decreasing thickness because of the increasing influence of the amorphous interfacial layer between the SrTiO3 film and the Si substrate....

Overview of variable-angle spectroscopic ellipsometry (VASE): II. Advanced applications

A preceding companion paper provides a general introduction to Variable Angle Spectroscopic Ellipsometry (VASE), and also describes many typical applications of the technique. In this paper, more advanced VASE applications are discussed. These applications rely on recent advances in ellipsometric hardware, which allow extremely accurate ellipsometric data to be acquired over a broad spectral range, from the IR to VUV. This instrumentation can also quantitatively measure the optical response of nonisotropic samples. Advanced data analysis techniques are also presented.

Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si

Spectroscopic rotating-analyzer ellipsometry employing a compensator and optical transmission were used to measure the dielectric functions of bulk 4H and 6H SiC from 0.72 to 6.6 eV for light propagating nearly parallel to the hexagonal axis. The measurements below the band gap show the presence of a thin surface layer, which was modeled as SiO2. The data are similar to results for cubic (3C) and 6H SiC from the literature, but differences are notable, particularly above 4 eV. At 5.56 eV, we observe a critical point in 4H SiC, which is assigned to direct interband transitions along the U=M−L axis in the hexagonal Brillouin zone after comparison with band structure calculations. No evidence for direct transitions below 6.5 eV was found in 6H SiC. We apply our results to the analysis of a 4H SiC film on insulator (SiCOI) produced by high-dose hydrogen implantation and direct wafer bonding on Si. For comparison, we also studied a 1 μm thick epitaxial layer of 3C SiC on Si, where the interference oscillations...

Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared

Spectroscopicellipsometry (SE) is a noncontact and nondestructive optical technique for thin film characterization. In the past 10 yr, it has migrated from the research laboratory into the semiconductor, data storage, display, communication, and optical coating industries. The wide acceptance of SE is a result of its flexibility to measure most material types: dielectrics, semiconductors, metals, superconductors, polymers, biological coatings, and even multilayers of these materials. Measurement of anisotropic materials has also made huge strides in recent years. Traditional SE measurements cover the ultraviolet, visible, and near infrared wavelengths. This spectral range is now acquired within seconds with high accuracy due to innovative optical configurations and charge coupled device detection. In addition, commercial SE has expanded into both the vacuum ultraviolet (VUV) and midinfrared (IR). This wide spectral coverage was achieved by utilizing new optical elements and detection systems, along with UV or Fourier transform IR light sources. Modern instrumentation is now available with unprecedented flexibility promoting a new range of possible applications. For example, the VUVspectral region is capable of characterizing lithographic materials for 157 nm photolithography. The VUV also provides increased sensitivity for thin layers (e.g., gate oxides or self-assembled monolayers) and allows investigation of high-energy electronic transitions. The infrared spectral region contains information about semiconductor doping concentration, phonon absorption, and molecular bond vibrational absorptions. In this work, we review the latest progress in SE wavelength coverage. Areas of significant application in both research and industrial fields will be surveyed, with emphasis on wavelength-specific information content.

Microstructural and infrared optical properties of electrochemically etched highly doped 4H–SiC

Pores in porous 4H–SiC are found to propagate first nearly parallel with the basal plane and then gradually change plane of propagation towards the direction of the c axis. A similar anisotropy in pore propagation is found in porous 6H–SiC. A disordered phase is encountered at the interface between crystalline SiC and the pores. Formation of this phase was attributed to the etching conditions. Characterization of the material with nondestructive infrared spectroscopic ellipsometry in the photon energy range 0.062–0.62 eV provides average thickness and porosity in good agreement with electron microscopy observations. Anodization of SiC introduces remarkable changes to the reststrahlen band. A shallow minimum at 0.113 eV is attributed to the Berreman effect. In addition, a sharp peak at 0.126 eV is discussed to be related to the in-depth inhomogeneity and particle shape effects in the material.

Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurements

With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist materials optimized for this wavelength has produced much activity in optical characterization of thin film materials. Here we focus on ultra transparent fluoropolymers for 157 nm pellicle applications where absorbances below 0.01/micrometers are necessary to achieve transmissions above 98 percent. Transmission-based absorbance/micrometers measurements performed using VUV spectroscopy are characterized by rapid turn-around time, and are essential during the materials design and screening phase of a new materials development program. Once suitable candidate materials families have been identified for development into 157 nm pellicles, VUV ellipsometry becomes essential to model the film structure, characterize the complex index of refraction, and to tune the pellicles etalon design. Comparison of VUV absorbance measurements of fluoropolymer thin films on CaF2 substrates with VUV ellipsometry measurements of the same polymers on silicon substrates demonstrates some of the artifacts in, and helps define the accuracy of transmission based absorbance measurements. Fresnel interference fringes can produce transmission oscillations that can lead to underestimation, or even negative values, of the film absorbance. Film thickness nonuniformity can serve to reduce the Fresnel interference fringes, leading to reduce variation in the apparent 157 nm absorbance for micrometers thick films. VUV ellipsometry coupled with Fresnel analysis of the thin film/substrate system formally takes into consideration all of these optical artifacts, while at the same time determining the complex index of refraction of the materials. Using VUV ellipsometry and Fresnel analysis, the absorbance values do not show the large apparent oscillations, the film thickness is directly determined in the measurement, and film microstructure is also modeled. We have identified ultra transparent fluoropolymers which have 157 nm absorbances below 0.01/micrometers . These materials have the appropriate optical properties for use as 157 nm pellicles with greater than 98 percent transmission. This is an important for the development of 157 nm lithography, since the lack of a 157nm pellicle has been identified as a critical path issue.

Optical characterization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry: 157 nm and below

As device feature sizes shrink below 0.18 micrometer, shorter wavelength exposure tools are being investigated to meet the requirements for higher resolution. Understanding the optical properties of thin films and substrate materials at short wavelengths (193 nm, 157 nm, and shorter) will be necessary to develop the lithographic process. Variable Angle Spectroscopic Ellipsometry (VASE) offers nondestructive and precise measurement of thin film thickness and refractive index in the wavelength range from 146 nm to 1700 nm. VASE measurements provide a complete description of the thin film optical properties, which can be used to track process changes or variations in sample structure. Recent hardware innovations have extended VASE into the vacuum ultraviolet to meet lithography requirements at 157 nm.

Refractive index measurements of photoresist and antireflective coatings with Variable Angle Spectroscopic Ellipsometry

Lithography requires accurate knowledge of film thickness and refractive index (n and k) for photoresists (PR) and antireflective coatings. It is becoming increasingly necessary to track changes in refractive index over the process cycle. The refractive index can change by as much as 0.04 in both n and k simply by bleaching the film. These changes can be caused by changes in film chemistry by processing such as baking and bleaching by UV exposure. Thus, keeping track of changes in the refractive index is useful to both resist and antireflective coating manufacturers as well as the process engineer. This work uses Variable Angle Spectroscopic Ellipsometry (VASER) to determine the refractive index of photoresist and antireflective coatings over the spectral range 190 - 1700 nm. Theory, hardware, and applications of Spectroscopic Ellipsometry are discussed along with procedures used to simultaneously extract the refractive index and film thickness of photoresist and antireflective coatings. Examples of commonly used films are presented.