James S. Foresi

Photonic-bandgap microcavities in optical waveguides

Confinement of light to small volumes has important implications for optical emission properties: it changes the probability of spontaneous emission from atoms, allowing both enhancement and inhibition. In photonic-bandgap (PBG) materials (also known as photonic crystals), light can be confined within a volume of the order of (λ/2n)3, where λ is the emission wavelength and n the refractive index of the material, by scattering from a periodic array of scattering centres. Until recently, the properties of two- and three-dimensional PBG structures have been measured only at microwave frequencies. Because the optical bandgap scales with the period of the scattering centres, feature sizes of around 100 nm are needed for manipulation of light at the infrared wavelength (1.54 µm) used for optical communications. Fabricating features this small requires the use of electron-beam or X-ray lithography. Here we report measurements of microcavity resonances in PBG structures integrated directly into a sub-micrometre-scale silicon waveguide. The microcavity has a resonance at a wavelength of 1.56 µm, a quality factor of 265 and a modal volume of 0.055 µm3. This level of integration might lead to new photonic chip architectures and devices, such as zero-threshold microlasers, filters and signal routers.

Ultra-compact Si-SiO 2 microring resonator optical channel dropping filters

Compact optical channel dropping filters incorporating side-coupled ring resonators as small as 3 /spl mu/m in radius are realized in silicon technology. Quality factors up to 250, and a free-spectral range (FSR) as large as 24 nm are measured. Such structures can be used as fundamental building blocks in more sophisticated optical signal processing devices.

Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model

In this letter, we experimentally evaluate the effect of miniaturization and surface roughness on transmission losses within a Si/SiO2 waveguide system, and explain the results using a theoretical model. Micrometer/nanometer-sized waveguides are imperative for its potential use in dense integrated optics and optical interconnection for silicon integrated circuits. A theoretical model was employed to predict the relationship between the transmission losses of the dielectric silicon waveguide and its width. This model accurately predicts that loss increases as waveguide width decreases. Furthermore, we show that a major source of loss comes from sidewall roughness. We have constructed a complete contour map showing the interdependence of sidewall roughness and transmission loss, to assist users in their design of an optimal waveguide fabrication process that minimizes loss. Additionally, users can find an effective path to reduce the scattering loss from sidewall roughness. Using this map, we confirm that n...

Wavelength switching and routing using absorption and resonance

A resonator side coupled to a pair of waveguides can switch an optical signal between two ports by means of absorption. The absorptive mechanism is used to suppress the resonant power transfer, rather than to promote loss. Thus, the input signal only suffers small attenuation, provided that the mode volumes of the resonators can be made small enough. Multiply-coupled resonators lead to improved crosstalk performance for both the ON and OFF switched states. The performance of such devices are analyzed analytically, and universal switching curves are derived.

Low‐loss polycrystalline silicon waveguides for silicon photonics

Photonic integrated circuits in silicon require waveguiding through a material compatible with silicon very large scale integrated circuit technology. Polycrystalline silicon (poly‐Si), with a high index of refraction compared to SiO2 and air, is an ideal candidate for use in silicon optical interconnect technology. In spite of its advantages, the biggest hurdle to overcome in this technology is that losses of 350 dB/cm have been measured in as‐deposited bulk poly‐Si structures, as against 1 dB/cm losses measured in waveguides fabricated in crystalline silicon. We report methods for reducing scattering and absorption, which are the main sources of losses in this system. To reduce surface scattering losses we fabricate waveguides in smooth recrystallized amorphous silicon and chemomechanically polished poly‐Si, both of which reduce losses by about 40 dB/cm. Atomic force microscopy and spectrophotometry studies are used to monitor surface roughness, which was reduced from an rms value of 19–20 nm down to ab...

Losses in polycrystalline silicon waveguides

The losses of polycrystalline silicon (polySi) waveguides clad by SiO2 are measured by the cutback technique. We report losses of 34 dB/cm at a wavelength of 1.55 μm in waveguides fabricated from chemical mechanical polished polySi deposited at 625 °C. These losses are two orders of magnitude lower than reported absorption measurements for polySi. Waveguides fabricated from unpolished polySi deposited at 625 °C exhibit losses of 77 dB/cm. We find good agreement between calculated and measured losses due to surface scattering.

Erbium-doped silicon light-emitting devices

Research in erbium-doped silicon (Si:Er) is discussed in light of our effort to improve the luminescence performance of our LEDs and to demonstrate an integration scheme for a microphotonic clock distribution system. Excitation from Si:Er can occur int ow ways: (1) direct excitation of an Er ion by high energy electrons or (2) energy transfer from an injected electron-hole pair to an Er ion in the lattice. In an LED the first excitation mechanism corresponds to operation in reverse bias, and the latter corresponds to operation in forward bias. We have studied the forward bias case, and we use an energy pathway model to describe the excitation and de-excitation processes. The competing, nonradiative processes against excitation and spontaneous emission are discussed. Maximization of light output can be approached in three ways: (1) decreasing the number of nonradiative energy pathways, (2) enhancing the probability of the radiative pathway, or (3) simply increasing the concentration of active Er sties. We report specific methods that address these issues, and we discuss more device structures that can be used as emitters, optical waveguides, and optical switches in a fully integrated microphotonic system.

Polysilicon Waveguides for Silicon Photonics

Photonic integrated circuits in silicon require waveguiding through a material compatible with silicon VLSI technology. Polysilicon (polySi), with a high index of refraction compared to SiO 2 and air, is an ideal candidate for use in silicon optical interconnect technology. Inspite of its advantages, the biggest hurdle to this technology is that losses of 350dB/cm have been measured in as-deposited polySi waveguide structures, as against ldB/cm losses measured in waveguides fabricated in crystalline silicon. We report methods for reducing scattering and absorption, which are the main sources of losses in this system. To reduce surface scattering losses we fabricate waveguides in smooth recrystallized amorphous silicon and Chemo-Mechanically Polished (CMP) polySi, both of which reduce losses by about 40dB/cm to 15dB/cm. Atomic Force Microscopy (AFM) and spectrophotometry studies are used to monitor surface roughness which has been reduced from an RMS roughness value of 19–20nm down to about 4–6nm. Bulk absorption/scattering losses can depend on size, structure, and quality of grains and grain boundaries which we investigate by means of Transmission Electron Microscopy (TEM). Although the lowest temperature deposition has twice as large a grain size as the highest temperature deposition, the losses appear to not be greatly dependent on grain size in the 0.1pm to 0.4pm range. Additionally, absorption/scattering at dangling bonds is investigated before and after a low temperature Electron-Cyclotron Resonance (ECR) hydrogenation step. After hydrogenation, we obtain the lowest reported polySi loss values at λ = 1.54μm of about 15dB/cm.