James V. Marzik

The Effect of Dopant Additions on the Microstructure of Boron Fibers Before and After Reaction to MgB2

Boron fibers made by a commercial chemical vapor deposition (CVD) process have been used as precursors for the formation of magnesium diboride (MgB2) superconducting wires. Prior to a reaction with magnesium, the addition of dopants such as carbon and titanium to the boron fiber has been shown to enhance the superconducting properties of MgB2. These dopants also influence the kinetics of the reaction with magnesium. In this study, the effect of carbon dopant additions on the microstructure of boron fibers was investigated using powder x-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Additionally, bundles of boron fibers were pressure infiltrated with molten magnesium and reacted at elevated temperatures. The microstructure and microchemistry of the fiber-metal interfaces were investigated by TEM and energy dispersive x-ray analysis (EDS).

The Effect of Excess Carbon on the Crystallographic, Microstructural, and Mechanical Properties of CVD Silicon Carbide Fibers

Silicon carbide (SiC) fibers made by chemical vapor deposition (CVD) are of interest for organic, ceramic, and metal matrix composite materials due their high strength, high elastic modulus, and retention of mechanical properties at elevated processing and operating temperatures. The properties of SCS-6{trademark} silicon carbide fibers, which are made by a commercial process and consist largely of stoichiometric SiC, were compared with an experimental carbon-rich CVD SiC fiber, to which excess carbon was added during the CVD process. The concentration, homogeneity, and distribution of carbon were measured using energy dispersive x-ray spectroscopy (SEM/EDS). The effect of excess carbon on the tensile strength, elastic modulus, and the crystallographic and microstructural properties of CVD silicon carbide fibers was investigated using tensile testing, x-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM).

Characterization of a Ceramic-Metal-Ceramic Bond: Chemical Vapor Deposited (CVD) Silicon Carbide Joined by a Silver-Based Active Brazing Alloy (ABA)

Chemical vapor deposited (CVD) silicon carbide (SiC) ceramic material was joined to itself via an air stable, silver-based active brazing alloy (ABA). The microstructure and microchemistry of the interface was characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Results were compared to previous studies on the active alloy brazing of sintered silicon carbide using higher copper alloys.

Crystallographic Orientation in Bulk Polycrystalline Silicon Carbide Produced by a Chemical Vapor Deposition (CVD) Process

Polycrystalline, theoretically dense silicon carbide was deposited onto graphite substrates via the reductive pyrolysis of methyltrichlorosilane in a hot-walled chemical vapor deposition (CVD) chamber. The resulting product can be considered a bulk material with deposit thicknesses in the range of 4 to 8 millimeters. The material was characterized using powder x-ray diffraction and Laue back-reflection techniques. Under the deposition conditions investigated in this study, the crystallographic orientation varied as a function of distance from the substrate. The material exhibited a high degree of randomness in proximity to the substrate, and progressively showed a higher degree of preferred crystallographic orientation as the deposit progressed. This phenomenon is correlated with the microstructure of the material as well as such mechanical properties as hardness and fracture toughness.