Jan Kunc

Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes

We have investigated the polarized-resolved photoluminescence from the contact layers and the quantum-well in an n-type GaAs/GaAlAs resonant tunneling diode for magnetic fields up to 19 T. The optical emission from the GaAs contact layers comprises the recombination from highly spin-polarized two-dimensional electron and hole gases with free tunneling carriers. Both the energy position and intensity of this indirect recombination are voltage-dependent and show remarkably abrupt variations near scattering-assisted tunneling resonances. Our results show that these two dimensional gases act as spin-polarized sources for carriers tunneling through the well in resonant tunneling diodes.

Fractional quantum Hall effect in CdTe

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley two-dimensional electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures. In contrast, the 5/2 FQH state remains absent down to T∼10 mK.

Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels eV, eV and eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.

Fractional quantum Hall effect in a dilute magnetic semiconductor

We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd1−xMnxTe. The presence of magnetic impurities results in a giant Zeeman splitting leading to an unusual ordering of composite fermion Landau levels. In experiment, this results in an unconventional opening and closing of fractional gaps around the filling factor ν=3/2 as a function of an in-plane magnetic field, i.e., of the Zeeman energy. By including the s-d exchange energy into the composite Landau level spectrum the opening and closing of the gap at filling factor 5/3 can be modeled quantitatively. The widely tunable spin-splitting in a diluted magnetic 2DES provides a means to manipulate fractional states.

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

We have studied the polarized emission from the contact layers and the quantum well of asymmetric n-type GaAs/GaAlAs resonant tunneling diodes under high magnetic fields (up to 19 T) parallel to the tunnel current. The photoluminescence from the GaAs contact layers shows evidence of the recombination from a two-dimensional hole gas accumulated next to the GaAlAs barrier and free carriers. Both the energy position and the intensity of this emission are voltage dependent. In addition, the photoluminescence from the two-dimensional hole gas and quantum well is strongly spin-polarized under the applied voltage and high magnetic fields. Pronounced oscillatory features are observed in the magnetic field dependence of the polarization degree from the quantum well and the two-dimensional hole emissions at integer filling factors. The obtained data show that resonant tunneling diodes are interesting systems to study the physical properties of voltage-controlled two-dimensional gases in the accumulation layers and quantum well.

Enhancement of the spin gap in fully occupied two-dimensional Landau levels

Polarization-resolved magneto-luminescence, together with simultaneous magneto-transport measurements, have been performed on a two-dimensional electron gas (2DEG) confined in CdTe quantum well in order to determine the spin-splitting of fully occupied electronic Landau levels, as a function of the magnetic field (arbitrary Landau level filling factors) and temperature. The spin splitting, extracted from the energy separation of the \sigma+ and \sigma- transitions, is composed of the ordinary Zeeman term and a many-body contribution which is shown to be driven by the spin-polarization of the 2DEG. It is argued that both these contributions result in a simple, rigid shift of Landau level ladders with opposite spins.

Charge transport in CdZnTe coplanar grid detectors examined by laser induced transient currents

Laser-induced transient current technique was used for the visualization of charge transfer in the coplanar CdZnTe radiation detector including distinction to the collecting and noncollecting grids. Transient current waveforms measured at different intergrid biasing allowed us the identification of principal charge transit features and the final redistribution of collected charge between grids. We have demonstrated that while at the initial period of the charge passage through the detector bulk the current waveform shapes on the collection and non-collection electrodes are nearly the same, the intergrid biasing entails significant current deviation at the final part of the transients, where inverted current through the non-collecting grid induces markedly reduced/enhanced collected charge in the non-collecting/collecting electrode. An optimum ratio of cathode/intergrid biasing was found to be close to the ratio of detector/intergrid dimensions. Theoretical simulations demonstrating all charge-transfer cha...

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/SiC is measured within a temperature range of 50–300 K. The result of electroluminescence at 300 K is compared with the electroluminescent spectra from aluminium/SiC junction. The difference between the spectra is explained by the different band bending, which could lead to the tunable LED due to the semi-metal character of the graphene. We observed the electroluminescence at both bias polarities and we described the blue shift in the spectra by Franz–Keldysh effect.

Hydrogen intercalation of epitaxial graphene and buffer layer probed by mid-infrared absorption and Raman spectroscopy

We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated single layer epitaxial graphene and buffer layer grown on silicon face of SiC. We have used attenuated total reflection geometry to enhance absorption related to the surface and SiC/graphene interface. The Raman spectroscopy is used to show presence of buffer layer and single layer graphene prior to intercalation. We also present Raman spectra of quasi free standing monolayer and bilayer graphene after hydrogen intercalation at temperatures between 790 and 1510°C. We have found that although the Si-H bonds form at as low temperatures as 790°C, the well developed bond order has been reached only for samples intercalated at temperatures exceeding 1000°C. We also study temporal stability of hydrogen intercalated samples stored in ambient air. The optical spectroscopy shows on a formation of silyl and silylene groups on the SiC/graphene interface due to the residual atomic hydrogen left from the intercalation process.

Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes

We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x  =  5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.