Jan Vanhellemont
Nagaoka University of Technology
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Publication
Featured researches published by Jan Vanhellemont.
210th ECS Meeting : E7 - High Purity Silicon 9 | 2006
Jan Vanhellemont; E. Gaubas
The joint application of Si and Ge in advanced devices is the motivation for a comparative study of the dependence of recombination characteristics on excitation and doping density. Carrier lifetimes measured at high and low excitation levels are compared with simulations varying the excitation level. The Shockley-Read-Hall (SRH) model was combined with Auger recombination above a doping concentration threshold to simulate the observations. The dependence of carrier lifetime on dopant concentration and excitation level shows a very similar behaviour in Si and Ge and can explained well by a combined SRH and Auger recombination model.
IEEE Transactions on Nuclear Science | 1996
H Ohyama; Jan Vanhellemont; Yasukiyo Takami; Kazuhiro Hayama; T Kudou; T Hakata; Shigemi Kohiki; H Sunaga
Archive | 1996
Cor Claeys; Eddy Simoen; Jan Vanhellemont
Institute of Physics Conference Series | 1996
Jan Vanhellemont; G. Kissinger; D Gräf; Karine Kenis; Michel Depas; Paul Mertens; U. Lambert; Marc Heyns; Cor Claeys; H Richter; Patrick Wagner
27th International conference on Defects in Semiconductors (ICDS 27) | 2013
Johan Lauwaert; Lisanne Van Puyvelde; Jan Vanhellemont; Henk Vrielinck
2009 MRS Fall Meetin | 2009
Jan Vanhellemont; Johan Lauwaert; Jiahe Chen; Henk Vrielinck; J.M. Rafí; Hidenori Ohyama; Eddy Simoen; Deren Yang
Elsevier ; 2008. | 2008
Cor Claeys; Tony Peaker; Jean Fompeyrine; Martin M. Frank; Jan Vanhellemont
Elsevier; 2006. | 2006
Cor Claeys; Tony Peaker; B. G. Svensson; Jan Vanhellemont
210th ECS Meeting : E7 - High Purity Silicon 9 | 2006
Jan Vanhellemont; Eddy Simoen
Archive | 1999
Litovchenko; B. N Romanyuk; A. A Efremov; Melnik; Cor Claeys; Jan Vanhellemont
