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Featured researches published by Jang Eun Lee.


Applied Physics Letters | 2007

Enhanced switching current density due to resonant precession in current-induced magnetization switching

Woojin Kim; Taek Dong Lee; Jang Eun Lee; Se Chung Oh; Kyung Ho Shin; Hong Ju Suh; Kyung Jin Lee

Micromagnetic investigation was performed on the influence of neighboring cells in a conventional rectangular array to the switching current density (Jc) in the current-induced magnetization switching. We found that the Jc was increased regardless of the relative switching direction to the overall stray field. It is because the precession of the magnetization in the switching cell induces a resonant precession in neighboring cells through magnetostatic interaction. The resonant precession disturbs a fast reversal and results in the enhanced Jc for a fixed pulse width. The enhancement increases as the distance between the cells decreases. Here we proposed a zigzag array which significantly suppresses the enhancement of Jc due to the resonant precession.


Journal of Physics D | 2011

Switching phase diagrams of current-induced magnetization switching in asymmetric MgO-based magnetic tunnel junctions

Seung Young Park; Jae Ho Han; Se Chung Oh; Jang Eun Lee; Kyung Tae Nam; Hyun-Woo Lee; Younghun Jo; Kyung-Jin Lee

We investigated the effect of the free-layer composition and the pattern size of magnetic cell on current-induced magnetization switching in asymmetric MgO-based magnetic tunnel junctions. We found that the normalized switching phase diagrams (SPDs) measured at low temperature are mostly determined by the material composition of ferromagnetic electrodes but are not much sensitive to the intrinsic energy barrier and the anisotropy field of the sample. This experimental result indicates that the normalized SPD can be used to study the fundamental characteristics of spin-transfer torque.


ieee international magnetics conference | 2005

Thermal stability of MTJ using Zr capping layer

Se-Chung Oh; Jang Eun Lee; H.J. Kim; Y.K. Ha; Jun-Soo Bae; K.T. Nam; S.O. Park; Hyun-Su Kim; U-In Chung; Joo Tae Moon

The simple stacking structure such as [Sub/Zr/AlO/sub x//NiFe (or CoFeB)/capping layer] was prepared to investigate the changes of magnetic properties of free layer with annealing temperature. Ta, Ru, or Zr was used as the capping layer. Samples were annealed in a vacuum (below 1/spl times/10/sup -6/ Torr) for 1 hour under a magnetic field of 10 KOe. The magnetic properties were measured using vibrating sample magnetometer in sample with 1/spl times/1 cm/sup 2/ area. The changes of the coupling field between the pinned layers through Ru as a function of annealing temperature for various pinned layer materials were also studied.


Nature Physics | 2009

Bias- voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

Se Chung Oh; Seung Young Park; Aurelien Manchon; M. Chshiev; Jae Ho Han; Hyun-Woo Lee; Jang Eun Lee; Kyung Tae Nam; Younghun Jo; Yo Chan Kong; B. Dieny; Kyung-Jin Lee


Archive | 2012

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

Jeong Heon Park; Woo Chang Lim; Se Chung Oh; Woojin Kim; Sang Hwan Park; Jang Eun Lee


Archive | 2015

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Jeong Heon Park; Woo Chang Lim; Se Chung Oh; Young Hyun Kim; Sang Hwan Park; Jang Eun Lee


Archive | 2008

RESISTIVE MEMORY DEVICES AND METHODS OF FORMING RESISTIVE MEMORY DEVICES

Jang Eun Lee; Dae-Kyom Kim; Jun-Ho Jeong; Se-Chung Oh; Kyung-Tae Nam; Hyun-Jun Sim


Archive | 2006

Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods

Jang Eun Lee; Se-Chung Oh; Jun-Soo Bae; Hyun-Jo Kim; Young-ki Ha; Kyung-Tae Nam


ieee international magnetics conference | 2005

Development of magnetic tunnel junction for toggle-MRAM

H.J. Kim; Y.K. Ha; Se-Chung Oh; Jun-Soo Bae; K.T. Nam; Jang Eun Lee; S.O. Park; Hyun-Su Kim; N.I. Lee; U-In Chung; Joo Tae Moon; Hyun-Jae Kang


Archive | 2007

Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates

Jang Eun Lee; Se-Chung Oh; Jun-Soo Bae; Hyun-Jo Kim; Young-ki Ha; Kyung-Tae Nam

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Hyun-Woo Lee

Pohang University of Science and Technology

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Younghun Jo

Sungkyunkwan University

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