Jannika Lauth

All-printed thin-film transistors from networks of liquid-exfoliated nanosheets

Printing nanosheet-network transistors Two-dimensional (2D) materials such as graphene and metal chalcogenides such as tungsten diselenide (WSe2) are attractive for use in low-cost thin-film transistors (TFTs) because they have high charge-carrier mobility. Kelly et al. printed TFTs from networks of exfoliated dispersions of 2D materials with graphene contacts, WSe2 as the semiconductor, and a boron nitride separator. Electrolytic gating with ionic liquids enabled higher operating currents than achieved with comparable organic TFTs. Science, this issue p. 69 Vertically stacked transistors made from printed networks of exfoliated nanosheets support high currents and on-off ratios. All-printed transistors consisting of interconnected networks of various types of two-dimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks. The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.

Photogeneration and Mobility of Charge Carriers in Atomically Thin Colloidal InSe Nanosheets Probed by Ultrafast Terahertz Spectroscopy

The implementation of next generation ultrathin electronics by applying highly promising dimensionality-dependent physical properties of two-dimensional (2D) semiconductors is ever increasing. In this context, the van der Waals layered semiconductor InSe has proven its potential as photodetecting material with high charge carrier mobility. We have determined the photogeneration charge carrier quantum yield and mobility in atomically thin colloidal InSe nanosheets (inorganic layer thickness 0.8-1.7 nm, mono/double-layers, ≤ 5 nm including ligands) by ultrafast transient terahertz (THz) spectroscopy. A near unity quantum yield of free charge carriers is determined for low photoexcitation density. The charge carrier quantum yield decreases at higher excitation density due to recombination of electrons and holes, leading to the formation of neutral excitons. In the THz frequency domain, we probe a charge mobility as high as 20 ± 2 cm2/(V s). The THz mobility is similar to field-effect transistor mobilities extracted from unmodified exfoliated thin InSe devices. The current work provides the first results on charge carrier dynamics in ultrathin colloidal InSe nanosheets.

Ultrafast Transient Absorption and Terahertz Spectroscopy as Tools to Probe Photoexcited States and Dynamics in Colloidal 2D Nanostructures

Abstract Two-dimensional (2D) semiconductors hold high potential for the implementation of efficient ultrathin electronics (e.g. field-effect transistors, light emitting diodes and solar cell devices). In recent years, colloidal methods to synthesize ultrathin 2D materials have been developed that offer alternatives (like the production of non-layered 2D materials and upscaling) to mechanical exfoliation methods. By focusing on optoelectronic applications, it is important to characterize the nature and dynamics of photoexcited states in these materials. In this paper, we use ultrafast transient absorption (TA) and terahertz (THz) spectroscopy as optimal tools for such a characterization. We choose recently synthesized ultrathin colloidal 2D InSe nanosheets (inorganic layer thickness 0.8–1.7 nm; ≤5 nm including ligands) for discussing TA and THz spectroscopic studies and elucidate their charge carrier dynamics under photoexcitation with TA. THz spectroscopy is then used to extract contactless AC mobilities as high as 20±2 cm2/Vs in single InSe layers. The obtained results underpin the general applicability of TA and THz spectroscopy for characterizing photoexcited states in 2D semiconductors.