Jason Dominguez

Tailoring Directional Scattering through Magnetic and Electric Resonances in Subwavelength Silicon Nanodisks

Interference of optically induced electric and magnetic modes in high-index all-dielectric nanoparticles offers unique opportunities for tailoring directional scattering and engineering the flow of light. In this article we demonstrate theoretically and experimentally that the interference of electric and magnetic optically induced modes in individual subwavelength silicon nanodisks can lead to the suppression of resonant backscattering and to enhanced resonant forward scattering of light. To this end we spectrally tune the nanodisks fundamental electric and magnetic resonances with respect to each other by a variation of the nanodisk aspect ratio. This ability to tune two modes of different character within the same nanoparticle provides direct control over their interference, and, in consequence, allows for engineering the particles resonant and off-resonant scattering patterns. Most importantly, measured and numerically calculated transmittance spectra reveal that backward scattering can be suppressed and forward scattering can be enhanced at resonance for the particular case of overlapping electric and magnetic resonances. Our experimental results are in good agreement with calculations based on the discrete dipole approach as well as finite-integral frequency-domain simulations. Furthermore, we show useful applications of silicon nanodisks with tailored resonances as optical nanoantennas with strong unidirectional emission from a dipole source.

Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances

Silicon-process compatible metasurface was designed and tested in the infrared wavelength range. These metasurfaces show very high Q (>100), extreme chirality, and polarization conversion along with very low-loss operation. They show promise for sensing applications as well as spectrally selective CP thermal emitters.

Polarization-Independent Silicon Metadevices for Efficient Optical Wavefront Control

We experimentally demonstrate a functional silicon metadevice at telecom wavelengths that can efficiently control the wavefront of optical beams by imprinting a spatially varying transmittance phase independent of the polarization of the incident beam. Near-unity transmittance efficiency and close to 0-2π phase coverage are enabled by utilizing the localized electric and magnetic Mie-type resonances of low-loss silicon nanoparticles tailored to behave as electromagnetically dual-symmetric scatterers. We apply this concept to realize a metadevice that converts a Gaussian beam into a vortex beam. The required spatial distribution of transmittance phases is achieved by a variation of the lattice spacing as a single geometric control parameter.

Observation of Fano Resonances in All‐Dielectric Nanoparticle Oligomers

It is well-known that oligomers made of metallic nanoparticles are able to support sharp Fano resonances originating from the interference of two plasmonic resonant modes with different spectral width. While such plasmonic oligomers suffer from high dissipative losses, a new route for achieving Fano resonances in nanoparticle oligomers has opened up after the recent experimental observations of electric and magnetic resonances in low-loss dielectric nanoparticles. Here, light scattering by all-dielectric oligomers composed of silicon nanoparticles is studied experimentally for the first time. Pronounced Fano resonances are observed for a variety of lithographically-fabricated heptamer nanostructures consisting of a central particle of varying size, encircled by six nanoparticles of constant size. Based on a full collective mode analysis, the origin of the observed Fano resonances is revealed as a result of interference of the optically-induced magnetic dipole mode of the central particle with the collective mode of the nanoparticle structure. This allows for effective tuning of the Fano resonance to a desired spectral position by a controlled size variation of the central particle. Such optically-induced magnetic Fano resonances in all-dielectric oligomers offer new opportunities for sensing and nonlinear applications.

Realization of tellurium-based all dielectric optical metamaterials using a multi-cycle deposition-etch process

Tellurium (Te) dielectric resonator metamaterials for thermal infrared applications were fabricated using a multi-cycle deposition-etch process that circumvents pinch-off issues during deposition. Deposition and etching of Te were studied in detail. Metamaterial samples with varying resonator dimensions were fabricated using this technique. All the samples showed two transmission minima corresponding to magnetic and electric dipole resonances. Longer resonant wavelengths were observed as the resonator dimension was increased. Observation of spectral overlap between magnetic and electric resonances gives us the potential opportunity to realize a negative refractive index material.

Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

We propose and demonstrate a relaxed-SiGe/strained-Si enhancement-mode gate stack for quantum dots. A mobility of 1.6 × 105 cm2/Vs at 5.8 × 1011/cm2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade measured in a double-top-gated lateral quantum dot nanostructure terminates with open diamonds up to ±10 mV of dc voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics. A modified implant, polycrystalline silicon formation and annealing conditions were utilized to minimize the thermal budget that potentially leads to Ge/Si interdiffusion.

Coherent coupling between a quantum dot and a donor in silicon

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.In silicon, quantum information can be stored in donors or quantum dots, each with its advantages and limitations—particularly in terms of fabrication. Here the authors coherently couple a phosphorous donor’s electron spin to a quantum dot, encoding information in the hybrid two-electron system’s state.

High-Q terahertz Fano resonance with extraordinary transmission in concentric ring apertures

We experimentally demonstrate a polarization-independent terahertz Fano resonance with extraordinary transmission when light passes through two concentric subwavelength ring apertures in the metal film. The Fano resonance is enabled by the coupling between a high-Q dark mode and a low-Q bright mode. We find the Q factor of the dark mode ranges from 23 to 40, which is 3~6 times higher than Q of bright mode. We show the Fano resonance can be tuned by varying the geometry and dimension of the structures. We also demonstrate a polarization dependent Fano resonance in a modified structure of concentric ring apertures.

Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.

We report Pauli blockade in a multielectron silicon metal-oxide-semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet-triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.

High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.