Jean-Baptiste Quoirin

Modeling of a New SOI Bidirectional Bipolar Junction Transistor for Low-Loss Household Appliances

In this paper, a new monolithic bidirectional bipolar junction transistor with full turn-off control is studied due to technology computer-aided tools. The structure is built on a symmetrical transistor using silicon-on-insulator technology, which functionality relies on reduced surface field and base shielding effects. These concepts allow high drift doping concentrations and a thin and/or lowly doped base. Such a structure is suitable for bidirectional household appliances within a confined environment where power dissipation is a critical parameter.

Gold and platinum profiles in fast power devices

Abstract Gold and platinum depth profile measurements were reported using different techniques (secondary ion mass spectroscopy, SIMS; neutron activation analysis, NAA; capacitance–voltage measurement, C–V) which were able to detect low concentrations of the metals. The kick-out simulation reproduced well the experimental profiles, provided an eventual metal accumulation was taken into account resulting in a shift of the metal source and of the self-interstitials sink. The influence of high As concentration on the Au solubility limit was noticed also.

BJT static behavior improvement by modification of the epitaxial layer

In this paper, high voltage Bipolar Junction Transistors are presented and compared in order to suggest a bidirectional switch for household appliances with fully turn-on, turn-off control. A comparative theoretical study, using 2D simulations, shows that concepts like “superjunctions” and “floating islands” improve the static current gain without unwanted behavior like parasitic diodes.

Characterization of a high gain BJT used in power conversion on AC mains

Nowadays, the existing power devices (thyristors, Triacs, …) used to drive usual AC loads (e.g. washing machines, dimmers, …) are quite limited: no turn-off drive, small scale integration and high thermal dissipation. Within this framework, new architectures have to be developed. This paper summarizes the first results of the electrical characterization of a new high gain low loss 600V bipolar transistor. The static performances of our new bipolar transistor are compared with those obtained using some electrical simulations (Sentaurus). Combining two of these devices, we should be able to develop a new generation of AC power devices.