Jean-Marc Fedeli

Optical characterization of silicon-on-insulator–based single and coupled racetrack resonators

Silicon photonics is the emerging optical interconnect technology where integrated nanophotonic components allow reaching high device density and improved optical functional- ities. One key component is the optical microresonator. A particular kind of microresonator is the racetrack resonator where straight waveguide sections are used to achieve a large value of the coupling coefficient with a bus waveguide for any light polarization state. It is our aim to study the performances of racetrack resonators fabricated on silicon on insulator via CMOS pro- cessing. We experimentally investigated different multiple resonator designs where box-shaped filter characteristic, Vernier effect, and coupled resonator induced transparency effects are ob- tained. We demonstrate that racetrack resonators are instrumental to several different functions in nanophotonics and that the actual lithographic process is fully capable of building these

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

An All Optical Method for Fabrication Error Measurements in Integrated Photonic Circuits

We propose an optical method to quantify the level of fabrication imperfections in a Silicon On Insulator wafer. The method is based on the use of Side Coupled Integrated Spaced Sequence of Resonators (SCISSOR) as test devices. Fabrication induced fluctuations of the effective index and of the coupling coefficient are mapped by comparing different spectral responses of nominally identical samples taken from different dies in the wafer. Random variations of the resonators optical path are quantified in terms of standard deviations of normally distribuited variables by finding a statistical correlation with the coupled resonator induced transparency (CRIT) phenomena. We found a strong correlation between CRIT and fabrication errors. This led us to design a SCISSOR based test structure that allows to quantify the degree of local structural imperfections in a fast, accurate and non invasive way. Performances, possible applications and limitations are investigated with the help of transfer matrix simulations.