Jean-Roch Vaillé

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained by both three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.

An integrated sensor using optically stimulated luminescence for in-flight dosimetry

The feasibility of an integrated sensor based on Optically Stimulated Luminescence (OSL) dosimetry is demonstrated. The principle and the basic structure are reviewed. A lab demonstrator was realized and a board designed to operate the sensor at different doses and doses rates. The first calibrations are presented and discussed.

Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetry

The signal linearity versus a dose of an integrated sensor based on optically stimulated luminescence is examined with electrons, protons, and photons of various energies. This new kind of space dosimeter is an integrator erased by the dose measurement. Thus, it allows the detection of small doses (1 mGy) with the exploitation of its whole dynamic (4 decades) at each measurement.

Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

An accelerated irradiation technique is used to study dose-ASET synergy effects. The impact of TID on SET is found to be identical when the dose rate is switched from high to low or from low to high.

High-energy particle irradiation of optically stimulated luminescent films at CERN

For the first time, optically stimulated luminescent (OSL) dosimeters have been irradiated at CERN with high-energy particles. Two experiments with existing OSL films are presented: measuring the dose delivered by 3.66-GeV negative pions and mapping the intensity profile of a 23-GeV proton beam. An on-line dosimeter is also presented and applied to the monitoring of the dose delivered by a 500-MeV electron beam. The results are discussed with regards to the specific concerns raised by high doses and high energies.

Impact of Switched Dose-Rate Irradiation on the Response of the LM124 Operational Amplifier to Pulsed X-Rays

The Synergistic effect between TID and ATREEs (Analog Transient Radiation Effects on Electronics) in an operational amplifier (opamp) (LM124) is investigated for three different bias configurations. An accelerated irradiation technique is used to study these synergistic effects. The impact of TID on ATREEs is found to be identical regardless of whether the irradiation is performed at low dose rate or whether the dose rate is switched from high to low using the Dose Rate Switching (DRS) technique. The correlation between the deviations of the opamps electrical parameters and the changes of ATREE widths is clearly established.

Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18

Heavy-ion-induced single-event transients (SET) are studied by device simulation on an ATMEL spatial component: the CMOS bulk 0.18 mum inverter. The wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SET. Thus, an investigation of the SET propagation through a 10-inverter logic chain is performed in the 218-418 K temperature range, and the threshold LET (LETth) required for unattenuated propagation through the inverter chain is determined. The LETth is calculated for two different locations of the heavy ion impact and for three temperature values. An increase of the sensitivity is found when the temperature is raised from 218 to 418 K.

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Temperature irradiation is shown to cause the fading of the OSL signal. The temperature dependence is modeled using an Arrhenius law. A simple method is proposed to correct this effect a posteriori.

m Inverter Chain

Monte-Carlo and deterministic approaches are combined in a single tool for the prediction of proton SEU cross section from heavy ion data. It relies on RPP sensitive volumes and a Monte-Carlo analysis of nuclear interactions induced by protons. This enables fast and accurate predictions. The estimated sensitivities agree well with experiments for a large number of devices on sub-micron or deep sub-micron devices. In this paper were also compared former analytical models including PROFIT and SIMPA.

Study of the Thermal Behavior of the OSL Integrated Sensor Response

The aim of this work is to validate the results of the Monte Carlo recoil energy determination nuclear physics code used to determine the deposited energy in a silicon volume taking into account the probabilistic approach of the physical phenomenon. A silicon sensor has been used to measure the deposited energy spectrum after an irradiation with a neutron source. The experimental results were then compared with the one obtained by Monte Carlo simulations in the same silicon volume. Experiments and simulations are shown to be in good agreement in the field of interest for soft error rate evaluation that means for deposited energy range leading to memory point upsets in static random access memory.