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Dive into the research topics where Jeffery A. Aguiar is active.

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Featured researches published by Jeffery A. Aguiar.


Physical Review Letters | 2013

Interfacial Ferromagnetism in LaNiO3/CaMnO3 Superlattices

Alexander J. Grutter; Hao Yang; Brian J. Kirby; Michael Fitzsimmons; Jeffery A. Aguiar; Nigel D. Browning; C. A. Jenkins; Elke Arenholz; Virat Mehta; U. S. Alaan; Y. Suzuki

We observe interfacial ferromagnetism in superlattices of the paramagnetic metal LaNiO3 and the antiferromagnetic insulator CaMnO3. LaNiO3 exhibits a thickness dependent metal-insulator transition and we find the emergence of ferromagnetism to be coincident with the conducting state of LaNiO3. That is, only superlattices in which the LaNiO3 layers are metallic exhibit ferromagnetism. Using several magnetic probes, we have determined that the ferromagnetism arises in a single unit cell of CaMnO3 at the interface. Together these results suggest that ferromagnetism can be attributed to a double exchange interaction among Mn ions mediated by the adjacent itinerant metal.


Nature Energy | 2017

A graded catalytic–protective layer for an efficient and stable water-splitting photocathode

Jing Gu; Jeffery A. Aguiar; Suzanne Ferrere; K. Xerxes Steirer; Yong Yan; Chuanxiao Xiao; James L. Young; Mowafak Al-Jassim; Nathan R. Neale; John A. Turner

Solar water splitting is often performed in highly corrosive conditions, presenting materials stability challenges. Gu et al. show that an efficient and stable hydrogen-producing photocathode can be realized through the application of a graded catalytic–protective layer on top of the photoabsorber.


Energy and Environmental Science | 2016

In situ investigation of the formation and metastability of formamidinium lead tri-iodide perovskite solar cells

Jeffery A. Aguiar; Sarah Wozny; Terry G. Holesinger; Toshihiro Aoki; Maulik K. Patel; Mengjin Yang; Joseph J. Berry; Mowafak Al-Jassim; Weilie Zhou; Kai Zhu

Organic–inorganic perovskites have emerged as an important class of next generation solar cells due to their remarkably low cost, band gap, and sub-900 nm absorption onset. Here, we show a series of in situ observations inside electron microscopes and X-ray diffractometers under device-relevant synthesis conditions focused on revealing the crystallization process of the formamidinium lead-triiodide perovskite at the optimum temperature of 175 °C. Direct in situ observations of the structure and chemistry over relevant spatial, temporal, and temperature scales enabled identification of key perovskite formation and degradation mechanisms related to grain evolution and interface chemistry. The lead composition was observed to fluctuate at grain boundaries, indicating a mobile lead-containing species, a process found to be partially reversible at a key temperature of 175 °C. Using low energy electron microscopy and valence electron energy loss spectroscopy, lead is found to be bonded in the grain interior with iodine in a tetrahedral configuration. At the grain boundaries, the binding energy associated with lead is consequently shifted by nearly 2 eV and a doublet peak is resolved due presumably to a greater degree of hybridization and the potential for several different bonding configurations. At the grain boundaries there is adsorption of hydrogen and OH− ions as a result of residual water vapor trapped as a non-crystalline material during formation. Insights into the relevant formation and decomposition reactions of formamidinium lead iodide at low to high temperatures, observed metastabilities, and relationship with the photovoltaic performance were obtained and used to optimize device processing resulting in conversion efficiencies of up to 17.09% within the stability period of the devices.


Nature Communications | 2014

Termination chemistry-driven dislocation structure at SrTiO3/MgO heterointerfaces

Pratik P. Dholabhai; Ghanshyam Pilania; Jeffery A. Aguiar; A. Misra; Blas P. Uberuaga

Exploiting the promise of nanocomposite oxides necessitates a detailed understanding of the dislocation structure at the interfaces, which governs diverse and technologically relevant properties. Here we report atomistic simulations demonstrating a strong dependence of the dislocation structure on the termination chemistry at the SrTiO3/MgO heterointerface. The SrO- and TiO2-terminated interfaces exhibit distinct nearest neighbour arrangements between cations and anions, leading to variations in local electrostatic interactions across the interface that ultimately dictate the dislocation structure. Networks of dislocations with different Burgers vectors and dislocation spacing characterize the two interfaces. These networks in turn influence the overall stability of and the behaviour of oxygen vacancies at the heterointerface, which will dictate vital properties such as mass transport at the interface. To date, the observed correlation between the dislocation structure and the termination chemistry at the interface has not been recognized, and offers novel avenues for fine-tuning oxide nanocomposites with enhanced functionalities.


IEEE Journal of Photovoltaics | 2016

Sodium Accumulation at Potential-Induced Degradation Shunted Areas in Polycrystalline Silicon Modules

Steven P. Harvey; Jeffery A. Aguiar; Peter Hacke; Harvey Guthrey; Steve Johnston; Mowafak Al-Jassim

We investigated potential-induced degradation (PID) in silicon mini-modules that were subjected to accelerated stressing to induce PID conditions. Shunted areas on the cells were identified with photoluminescence and dark lock-in thermography (DLIT) imaging. The identical shunted areas were then analyzed via time-of-flight secondary-ion mass spectrometry (TOF-SIMS) imaging, 3-D tomography, and high-resolution transmission electron microscopy. The TOF-SIMS imaging indicates a high concentration of sodium in the shunted areas, and 3-D tomography reveals that the sodium extends more than 2 μm from the surface below shunted regions. Transmission electron microscopy investigation reveals that a stacking fault is present at an area identified as shunted by DLIT imaging. After the removal of surface sodium, tomography reveals persistent sodium present around the junction depth of 300 nm and a drastic difference in sodium content at the junction when comparing shunted and nonshunted regions.


Journal of Applied Physics | 2014

Role of the Interface on Radiation Damage in the SrTiO3/LaAlO3 Heterostructure under Ne2+ Ion Irradiation

Zhenxing Bi; Blas P. Uberuaga; Louis James Vernon; Jeffery A. Aguiar; Engang Fu; Shijian Zheng; Shixiong Zhang; Yongqiang Wang; A. Misra; Quanxi Jia

We systematically investigated the microstructural evolution of heteroepitaxial SrTiO3 (STO) thin films grown on a single crystal LaAlO3 (LAO) (001) substrate, focusing on the response of the STO/LAO interface to Ne2+ irradiation at room temperature. Cross sectional transmission electron microscope (TEM) analysis reveals that the LAO crystal amorphizes first after a relatively low dose of damage followed by the amorphization of the STO film after irradiation to a higher dose. While the critical dose to amorphize differs between each material, amorphization begins at the interface and proceeds outward in both cases. Thus, a crystalline/amorphous interface first forms at the STO/LAO interface by a dose of 1 dpa, and then an amorphous/amorphous interface forms when the dose reaches 3 dpa. Scanning TEM and x-ray energy dispersive spectroscopy indicate no significant heavy cation elemental diffusion, though electron energy loss spectroscopy reveals a redistribution of oxygen across the film/substrate interface...


Journal of Chemical Physics | 2014

Defect interactions with stepped CeO2/SrTiO3 interfaces: Implications for radiation damage evolution and fast ion conduction

Pratik P. Dholabhai; Jeffery A. Aguiar; A. Misra; Blas P. Uberuaga

Due to reduced dimensions and increased interfacial content, nanocomposite oxides offer improved functionalities in a wide variety of advanced technological applications, including their potential use as radiation tolerant materials. To better understand the role of interface structures in influencing the radiation damage tolerance of oxides, we have conducted atomistic calculations to elucidate the behavior of radiation-induced point defects (vacancies and interstitials) at interface steps in a model CeO2/SrTiO3 system. We find that atomic-scale steps at the interface have substantial influence on the defect behavior, which ultimately dictate the material performance in hostile irradiation environments. Distinctive steps react dissimilarly to cation and anion defects, effectively becoming biased sinks for different types of defects. Steps also attract cation interstitials, leaving behind an excess of immobile vacancies. Further, defects introduce significant structural and chemical distortions primarily at the steps. These two factors are plausible origins for the enhanced amorphization at steps seen in our recent experiments. The present work indicates that comprehensive examination of the interaction of radiation-induced point defects with the atomic-scale topology and defect structure of heterointerfaces is essential to evaluate the radiation tolerance of nanocomposites. Finally, our results have implications for other applications, such as fast ion conduction.


Scientific Reports | 2015

Non-uniform solute segregation at semi-coherent metal/oxide interfaces

Samrat Choudhury; Jeffery A. Aguiar; M.J. Fluss; Luke L. Hsiung; A. Misra; Blas P. Uberuaga

The properties and performance of metal/oxide nanocomposites are governed by the structure and chemistry of the metal/oxide interfaces. Here we report an integrated theoretical and experimental study examining the role of interfacial structure, particularly misfit dislocations, on solute segregation at a metal/oxide interface. We find that the local oxygen environment, which varies significantly between the misfit dislocations and the coherent terraces, dictates the segregation tendency of solutes to the interface. Depending on the nature of the solute and local oxygen content, segregation to misfit dislocations can change from attraction to repulsion, revealing the complex interplay between chemistry and structure at metal/oxide interfaces. These findings indicate that the solute chemistry at misfit dislocations is controlled by the dislocation density and oxygen content. Fundamental thermodynamic concepts – the Hume-Rothery rules and the Ellingham diagram – qualitatively predict the segregation behavior of solutes to such interfaces, providing design rules for novel interfacial chemistries.


Journal of Materials Chemistry C | 2015

Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films

P.S. Sanakara R. Krishnan; Jeffery A. Aguiar; Quentin M. Ramasse; Demie Kepaptsoglou; Wen-I Liang; Ying-Hao Chu; Nigel D. Browning; Paul Munroe; V. Nagarajan

Strain engineering of epitaxial ferroelectrics has emerged as a powerful method to tailor the electromechanical response of these materials, although the effect of strain at the atomic scale and the interplay between lattice displacements and electronic structure changes are not yet fully understood. Here, using a combination of scanning transmission electron microscopy (STEM) and density functional theory (DFT), we systematically probe the role of epitaxial strain in mixed phase bismuth ferrite thin films. Electron energy loss O K and Fe L2,3 edge spectra acquired across the rhombohedral (R)–tetragonal (T) phase boundary reveal progressive, and systematic, changes in electronic structure going from one phase to the other. The comparison of the acquired spectra with theoretical simulations using DFT suggests a breakage in the structural symmetry across the boundary due to the simultaneous presence of increasing epitaxial strain and off-axial symmetry in the T phase. This implies that the imposed epitaxial strain plays a significant role in not only changing the crystal-field geometry, but also the bonding environment surrounding the central iron cation at the interface thus providing new insights and a possible link to understand how the imposed strain could perturb magnetic ordering in the T phase BFO.


Advanced Science | 2016

Contrasting the material chemistry of Cu2ZnSnSe4 and Cu2ZnSnS(4-x)Sex

Jeffery A. Aguiar; Maulik K. Patel; Toshihiro Aoki; Sarah Wozny; Mowafak Al-Jassim

Earth‐abundant sustainable inorganic thin‐film solar cells, independent of precious elements, pivot on a marginal material phase space targeting specific compounds. Advanced materials characterization efforts are necessary to expose the roles of microstructure, chemistry, and interfaces. Herein, the earth‐abundant solar cell device, Cu2ZnSnS(4– x )Sex, is reported, which shows a high abundance of secondary phases compared to similarly grown Cu2ZnSnSe4.

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Blas P. Uberuaga

Los Alamos National Laboratory

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Mowafak Al-Jassim

National Renewable Energy Laboratory

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A. Misra

University of Michigan

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Toshihiro Aoki

University of California

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Yongqiang Wang

Los Alamos National Laboratory

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James A. Valdez

Los Alamos National Laboratory

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O. Anderoglu

Los Alamos National Laboratory

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Pratik P. Dholabhai

Rochester Institute of Technology

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Terry G. Holesinger

Los Alamos National Laboratory

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