Jeffrey M. Pietryga

Efficient Synthesis of Highly Luminescent Copper Indium Sulfide-Based Core/Shell Nanocrystals with Surprisingly Long-Lived Emission

We report an efficient synthesis of copper indium sulfide nanocrystals with strong photoluminescence in the visible to near-infrared. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. The overgrowth of as-prepared nanocrystals with a few monolayers of CdS or ZnS increases the photoluminescence quantum efficiency to > 80%. On the basis of time-resolved spectroscopic studies of core/shell particles, we conclude that the emission is due to an optical transition that couples a quantized electron state to a localized hole state, which is most likely associated with an internal defect.

Utilizing the lability of lead selenide to produce heterostructured nanocrystals with bright, stable infrared emission.

Infrared-emitting nanocrystal quantum dots (NQDs) have enormous potential as an enabling technology for applications ranging from tunable infrared lasers to biological labels. Notably, lead chalcogenide NQDs, especially PbSe NQDs, provide efficient emission over a large spectral range in the infrared, but their application has been limited by instability in emission quantum yield and peak position on exposure to ambient conditions. Conventional methods for improving NQD stability by applying a shell of a more stable, wider band gap semiconductor material are frustrated by the tendency of lead chalcogenide NQDs toward Ostwald ripening at even moderate reaction temperatures. Here, we describe a partial cation-exchange method in which we take advantage of this lability to controllably synthesize PbSe/CdSe core/shell NQDs. Critically, these NQDs are stable against fading and spectral shifting. Further, these NQDs can undergo additional shell growth to produce PbSe/CdSe/ZnS core/shell/shell NQDs that represent initial steps toward bright, biocompatible near-infrared optical labels.

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection.

Apparent Versus True Carrier Multiplication Yields in Semiconductor Nanocrystals

Generation of multiple electron-hole pairs (excitons) by single photons, known as carrier multiplication (CM), has the potential to appreciably improve the performance of solar photovoltaics. In semiconductor nanocrystals, this effect usually has been detected using a distinct dynamical signature of multiexcitons associated with their fast Auger recombination. Here, we show that uncontrolled photocharging of the nanocrystal core can lead to exaggeration of the Auger decay component and, as a result, significant deviations of the apparent CM efficiencies from their true values. Specifically, we observe that for the same sample, apparent multiexciton yields can differ by a factor of approximately 3 depending on whether the nanocrystal solution is static or stirred. We show that this discrepancy is consistent with photoinduced charging of the nanocrystals in static solutions, the effect of which is minimized in the stirred case where the charged nanocrystals are swept from the excitation volume between sequential excitation pulses. Using side-by-side measurements of CM efficiencies and nanocrystal charging, we show that the CM results obtained under static conditions converge to the values measured for stirred solutions after we accurately account for the effects of photocharging. This study helps to clarify the recent controversy over CM in nanocrystals and highlights some of the issues that must be carefully considered in spectroscopic studies of this process.

Controlled Alloying of the Core–Shell Interface in CdSe/CdS Quantum Dots for Suppression of Auger Recombination

The influence of a CdSexS1-x interfacial alloyed layer on the photophysical properties of core/shell CdSe/CdS nanocrystal quantum dots (QDs) is investigated by comparing reference QDs with a sharp core/shell interface to alloyed structures with an intermediate CdSexS1-x layer at the core/shell interface. To fully realize the structural contrast, we have developed two novel synthetic approaches: a method for fast CdS-shell growth, which results in an abrupt core/shell boundary (no intentional or unintentional alloying), and a method for depositing a CdSexS1-x alloy layer of controlled composition onto the CdSe core prior to the growth of the CdS shell. Both types of QDs possess similar size-dependent single-exciton properties (photoluminescence energy, quantum yield, and decay lifetime). However the alloyed QDs show a significantly longer biexciton lifetime and up to a 3-fold increase in the biexciton emission efficiency compared to the reference samples. These results provide direct evidence that the structure of the QD interface has a significant effect on the rate of nonradiative Auger recombination, which dominates biexciton decay. We also observe that the energy gradient at the core-shell interface introduced by the alloyed layer accelerates hole trapping from the shell to the core states, which results in suppression of shell emission. This comparative study offers practical guidelines for controlling multicarrier Auger recombination without a significant effect on either spectral or dynamical properties of single excitons. The proposed strategy should be applicable to QDs of a variety of compositions (including, e.g., infrared-emitting QDs) and can benefit numerous applications from light emitting diodes and lasers to photodetectors and photovoltaics.

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Engineered CuInSexS2-x Quantum Dots for Sensitized Solar Cells.

Colloidal CuInSexS2-x quantum dots (QDs) are an attractive less-toxic alternative to PbX and CdX (X = S, Se, and Te) QDs for solution-processed semiconductor devices. This relatively new class of QD materials is particularly suited to serving as an absorber in photovoltaics, owing to its high absorption coefficient and near-optimal and finely tunable band gap. Here, we engineer CuInSexS2-x QD sensitizers for enhanced performance of QD-sensitized TiO2 solar cells (QDSSCs). Our QD synthesis employs 1-dodecanethiol (DDT) as a low-cost solvent, which also serves as a ligand, and a sulfur precursor; addition of triakylphosphine selenide leads to incorporation of controlled amounts of selenium, reducing the band gap compared to that of pure CuInS2 QDs. This enables significantly higher photocurrent in the near-infrared (IR) region of the solar spectrum without sacrificing photovoltage. In order to passivate QD surface recombination centers, we perform a surface-cation exchange with Cd prior to sensitization, which enhances chemical stability and leads to a further increase in photocurrent. We use the synthesized QDs to demonstrate proof-of-concept QDSSCs with up to 3.5% power conversion efficiency.

Colloidal synthesis of infrared-emitting Germanium nanocrystals

In this study, we synthesized Ge nanocrystals and studied the effects of variables such as solvents, reducing agents, reaction temperature, and capping ligands. The resulting nanocrystals showed infrared photoluminescence with quantum yields as high as approximately 8% and enhanced resistance to oxidation. Size analysis of the samples by transmission electron microscopy revealed that the size dependence of the emission is consistent with the effects of quantum confinement.

Comparison of carrier multiplication yields in PbS and PbSe nanocrystals: the role of competing energy-loss processes.

Infrared band gap semiconductor nanocrystals are promising materials for exploring generation III photovoltaic concepts that rely on carrier multiplication or multiple exciton generation, the process in which a single high-energy photon generates more than one electron-hole pair. In this work, we present measurements of carrier multiplication yields and biexciton lifetimes for a large selection of PbS nanocrystals and compare these results to the well-studied PbSe nanocrystals. The similar bulk properties of PbS and PbSe make this an important comparison for discerning the pertinent properties that determine efficient carrier multiplication. We observe that PbS and PbSe have very similar biexciton lifetimes as a function of confinement energy. Together with the similar bulk properties, this suggests that the rates of multiexciton generation, which is the inverse of Auger recombination, are also similar. The carrier multiplication yields in PbS nanocrystals, however, are strikingly lower than those observed for PbSe nanocrystals. We suggest that this implies the rate of competing processes, such as phonon emission, is higher in PbS nanocrystals than in PbSe nanocrystals. Indeed, our estimations for phonon emission mediated by the polar Fröhlich-type interaction indicate that the corresponding energy-loss rate is approximately twice as large in PbS than in PbSe.

Enhanced carrier multiplication in engineered quasi-type-II quantum dots

One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core.