Jeiyoung Lee

The design of SiGe HBT LNA for IMT-2000 mobile application

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. The emitter degeneration technique for stability and the out-of-band-termination technique for improvement of IP3 (third order intercept point) are applied to SiGe HBT LNA design. This SiGe HBT LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -23 dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

Design of an MMIC broadband mixer with high output power using InGaP/GaAs HBT technology

In this paper, an InGaP/GaAs HBT MMIC broadband mixer with high output power is designed within a total chip area of 2.3 /spl times/ 0.85 mm/sup 2/. The down-conversion mixer shows return loss of 20 dB and a conversion gain of -2.7 dB in the broadband frequency range of 400 MHz to 10 GHz. It also shows a third-order input intercept point (IIP3) of +22.5 dBm, a third-order output intercept point (OIP3) of +19.8 dBm, and an output-referred 1-dB compression point (P/sub 1dB,out/) of +10 dBm.

A low-power Ku-band downconverter in InGaP-GaAs HBT technology

We have developed a low-voltage, low-power Ku-band microwave monolithic integrated circuit (MMIC) downconverter using InGaP-GaAs heterojunction bipolar transistor technology. It consists of a preamplifier, a double-balanced mixer, and an L-band wideband intermediate-frequency (IF) amplifier. The downconverter achieves a conversion gain of 31 dB, with a gain flatness within /spl plusmn/ 1 dB, and an output-referred 1-dB compression power (P/sub 1dB,OUT/) of +2.5dBm. This downconverter dissipates 33mA from a 3-V supply. We believe that the operating voltage and power consumption are lower than those of previously published Ku-band MMIC downconverters.

Low power and small sized Ku-band MMIC low noise block downconverter design using InGaP/GaAs HBT process

In this paper, low noise block downconverter (LNB) is designed for Ku-band satellite communication system using commercially available 6 inch InGaP/GaAs HBT high linear process. Designed MMIC is composed of low noise amplifier, double balance mixer, and IF amplifier with a total chip area of 2.6/spl times/1.1 mm/sup 2/. Designed MMIC yields conversion gain of over 37.5 dB, noise figure of less than 14 dB, ripple of 3 dB, and output-referred P/sub 1dB/(1 dB compression power) of 2.5 dBm with total power dissipation of 3 V, 50 mA.