Jeng-Rern Yang

A concurrent multi-band low-noise amplifier for WLAN/WiMAX applications

In this paper, a fully integrated concurrent multiband low noise amplifier (LNA) for WLAN and WiMAX is presented. The target frequency bands included 802.11 b/g@2.4 GHz, 802.11a@5.2 GHz for WLAN and 802.16d@3.5 GHz for WiMAX. The output matching network is constructed of shunt-peaking with inter-stage matching. Itpsilas easy to achieve matching and reduced chip size to only 0.75 mm2. The power gain of LNA is 11.79 dB at 2.4 GHz, 11.70 dB at 3.5 GHz and 10.06 dB at 5.2 GHz. And NF are 3.89 dB at 2.4 GHz, 4.03 dB at 3.5 GHz and 3.73 dB at 5.2 GHz;input and output return loss are below -10 dB for all desired frequency bands. The design is simulated by TSMC 0.18 um RF CMOS process. With 1.4 V voltage supply, the power dissipation is only 13.5 mW.

2 – 13GHz broadband CMOS low voltage mixer with active balun designed for UWB systems

This paper presents a 2 – 13GHz low-voltage broadband down-conversion mixer with an active balun for UWB radio. The mixer with an active balun is fabricated in the 0.18 µm 1P6M standard CMOS process. The mixer with active balun consumes 15.2 mW from a 1.2 V supply. This mixer was achieved by using a folded-mixer and a peaking inductor technique. This technique can double the 3 dB bandwidth at the output stage, so the high-frequency poles of the mixer could be pushed outside of the 2 – 13 GHz band range. The broadband mixer with an active balun achieves a conversion gain of 21 ± 0.6 dB and 14.9 ∼ 16.5 dB on a double-sideband (DSB) noise figure and the input return loss is −12 dB. The output return loss is −10 dB. An input third-order intercept point (IIP3) of −1.89 ∼ −1.8 dBm. The mixer with active balun achieves with a supply voltage of 1.2 V and with a power consumption of 18.3 mW.

Low voltage high linearity CMOS up-conversion mixer for LTE applications

The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.

A 3–10 GHz low power ultra-wideband CMOS LNA

This study presents a 3–10 GHz ultra-wideband low noise amplifier (UWB LNA) with an interstage technique, featuring low power consumption, high gain (S21), and a low noise figure (NF). The low power consumption UWB LNA is designed using standard 0.18µm CMOS technology. Using the interstage technique (current reused topology with a peaking inductor) achieves low power consumption. The LNA achieves S21 of 13.2±1.8 dB and the NF is lower than 4.4 dB with power dissipation (PD) of only 8.24 mW.

3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

This study presents a 3–10GHz ultra-wideband low-noise amplifier (UWB LNA) with CMOS distributed amplification,(DA) featuring low power consumption, flat response, high gain (S21), and low noise figure (NF). The DA UWB LNA is designed with standard 0.18μm CMOS technology. Low power consumption, flat and high gain (S21) were achieved through the use of a proposed two stage DA, and current-reused technique with a peaking inductor. An RL terminating network for the gate transmission line, and an under-damped Q-factor for second-order NF frequency response achieved a flat response and, low noise figure (NF). The LNA achieved S21 of 19.8±1.2 dB and an average NF of 3.4±0.36 dB with power dissipation (PD) of only 14.8 mW.

A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications

This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S11) less than -18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.

The implementation of 1.8GHz dual channel switched beam-former with active inductors phase shifters

This paper presents a 1.8GHz dual channel switched beam-former with active inductors phase shifters. Utilize active inductors and capacities to achieve design of Hybrid phase shifters. Phase shifter loss of -3.85 dB and phase difference of 85 degree. The architecture of active inductor used gyrator topology [2][6] which uses few of transistors to reach the performance of inductive. Quality factor of active inductor are 42.7 at 1.8GHz, area of active inductor are smaller than spiral inductor a lot. So we propose that application on RF beam-former to solve interference problem. Dual channel switched beam-former system can transceiver the signal of same frequency either different frequency and can generate two independent and cover different range of beam-former at each direction.

A 28.5 dBm switched beamforming transmitter for LTE small cell base station application

This paper proposes a RF front-end switched beamforming transmitter for application in LTE small cell base stations. The four element phased array circuit includes passive RC ninety degrees phase shifters, switches and pre-distortion power amplifiers. Each power amplifier can deliver an output power of 23 dBm and a power gain of 26 dB. The proposed transmitter has eight distinct beam directions by employing the proposed array arrangement circuit that compensates for the distance difference caused by constructive interference or destructive wave interference. The circuit was simulated in TSMC 0.18um 1P6M process. The simulated results indicated that the transmitter can generate an output power of 28.5 dBm, a power gain of 17dB and a power added efficiency of 26%.

A dual channel switched RF beamformer for LTE small cell base station receiver

This paper presents a dual channel switched RF-front-end beamformer to solve the severe interference problem that affects the LTE small-cell base stations. The beamformer system uses new type of hybrid phase shifter that situated at a later stage of the low-noise amplifier. The proposed system has four cases, and each can generate two opposite, non-overlapping coverage radio beams. Thus, the system can receive signals through two independent channels, either at the same frequency or at different frequencies.

A 23.2 dBm linear power amplifier using pre-distortion technique for LTE applications

A fully integrated 1.8 GHz CMOS power amplifier is presented in this paper. The proposed power amplifier consists of a three-stage cascade structure comprising a driver stage, a pre-distortion stage, and a power stage. The pre-distortion stage involves the use of two diode connected MOSFETs as a non-linearity generator to expand the 1dB compression point (P1dB) and enhance the power added efficiency (PAE) performance. The simulation result indicated that the circuit exhibited a power gain of 28.3 dB, an output power at the P1dB of 23.2 dBm, and a PAE of 32% under 3.3V supply. While applying an uplink LTE modulated signal, the amplifier delivers an average output power of 20.5 dBm.