Jenna Walrath

Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films

In this research, we report the enhanced thermoelectric power factor in topologically insulating thin films of Bi0.64Sb1.36Te3 with a thickness of 6–200 nm. Measurements of scanning tunneling spectroscopy and electronic transport show that the Fermi level lies close to the valence band edge, and that the topological surface state (TSS) is electron dominated. We find that the Seebeck coefficient of the 6 nm and 15 nm thick films is dominated by the valence band, while the TSS chiefly contributes to the electrical conductivity. In contrast, the electronic transport of the reference 200 nm thick film behaves similar to bulk thermoelectric materials with low carrier concentration, implying the effect of the TSS on the electronic transport is merely prominent in the thin region. The conductivity of the 6 nm and 15 nm thick film is obviously higher than that in the 200 nm thick film owing to the highly mobile TSS conduction channel. As a consequence of the enhanced electrical conductivity and the suppressed bip...

Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy

We quantify the local Seebeck coefficient with scanning thermoelectric microscopy, using a direct approach to convert temperature gradient-induced voltages (V) to Seebeck coefficients (S). We use a quasi-3D conversion matrix that considers both the sample geometry and the temperature profile. For a GaAs p-n junction, the resulting S-profile is consistent with that computed using the free carrier concentration profile. This combined computational-experimental approach is expected to enable nanoscale measurements of S across a wide variety of heterostructure interfaces.

Ordered horizontal Sb{sub 2}Te{sub 3} nanowires induced by femtosecond lasers

Nanowires are of intense interest on account of their ability to confine electronic and phononic excitations in narrow channels, leading to unique vibronic and optoelectronic properties. Most systems reported to date exhibit nanowire axes perpendicular to the substrate surface, while for many applications (e.g., photodetectors and sensors), a parallel orientation may be advantageous. Here, we report the formation of in-plane Sb 2Te3 nanowires using femtosecond laser irradiation. High-resolution scanning transmission electron microscopy imaging and element mapping reveal that an interesting laser-driven anion exchange mechanism is responsible for the nanowire formation. This development points the way to the scalable production of a distinct class of nanowire materials with in-plane geometry.

Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers

Nanowires are of intense interest on account of their ability to confine electronic and phononic excitations in narrow channels, leading to unique vibronic and optoelectronic properties. Most systems reported to date exhibit nanowire axes perpendicular to the substrate surface, while for many applications (e.g., photodetectors and sensors), a parallel orientation may be advantageous. Here, we report the formation of in-plane Sb 2Te3 nanowires using femtosecond laser irradiation. High-resolution scanning transmission electron microscopy imaging and element mapping reveal that an interesting laser-driven anion exchange mechanism is responsible for the nanowire formation. This development points the way to the scalable production of a distinct class of nanowire materials with in-plane geometry.