Jens Martin

Observation of electron–hole puddles in graphene using a scanning single-electron transistor

The electronic structure of graphene causes its charge carriers to behave like relativistic particles. For a perfect graphene sheet free from impurities and disorder, the Fermi energy lies at the so-called ‘Dirac point’, where the density of electronic states vanishes. But in the inevitable presence of disorder, theory predicts that equally probable regions of electron-rich and hole-rich puddles will arise. These puddles could explain graphene’s anomalous non-zero minimal conductivity at zero average carrier density. Here, we use a scanning single-electron transistor to map the local density of states and the carrier density landscape in the vicinity of the neutrality point. Our results confirm the existence of electron–hole puddles, and rule out extrinsic substrate effects as explanations for their emergence and topology. Moreover, we find that, unlike non-relativistic particles the density of states can be quantitatively accounted for by considering non-interacting electrons and holes.

Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.

Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene

Broken Symmetries Bilayer graphene samples are expected exhibit quantum Hall states that are ferromagnetic with different types of spin ordering. Weitz et al. (p. 812, published online 14 October) studied the conductance of high-quality suspended bilayer graphene samples. They used an applied perpendicular electric field to induce transitions between the different broken-symmetry states that appear at low carrier densities and deduced their order parameters. These states appeared in both the absence of a magnetic field, as well as in the presence of a symmetry-breaking magnetic field. They also showed that, even in absence of both an applied magnetic or electric field, the bilayer exhibits an energy gap, which indicates that electron-electron interactions contribute to the band structure. Ferromagnetic quantum Hall states were observed in suspended bilayer graphene samples in both zero and high magnetic fields. The single-particle energy spectra of graphene and its bilayer counterpart exhibit multiple degeneracies that arise through inherent symmetries. Interactions among charge carriers should spontaneously break these symmetries and lead to ordered states that exhibit energy gaps. In the quantum Hall regime, these states are predicted to be ferromagnetic in nature, whereby the system becomes spin polarized, layer polarized, or both. The parabolic dispersion of bilayer graphene makes it susceptible to interaction-induced symmetry breaking even at zero magnetic field. We investigated the underlying order of the various broken-symmetry states in bilayer graphene suspended between top and bottom gate electrodes. We deduced the order parameter of the various quantum Hall ferromagnetic states by controllably breaking the spin and sublattice symmetries. At small carrier density, we identified three distinct broken-symmetry states, one of which is consistent with either spontaneously broken time-reversal symmetry or spontaneously broken rotational symmetry.

Broken-symmetry states and divergent resistance in suspended bilayer graphene

D 0 state, the devices show extremely high magnetoresistance that scales as magnetic field divided by temperature. This resistance is predominantly affected by the perpendicular component of the applied field, and the extracted energy gap is significantly larger than expected for Zeeman splitting. These findings indicate that the broken-symmetry states arise from manybody interactions and underscore the important part that Coulomb interactions play in bilayer graphene.

Self-aligned Nanoscale SQUID on a Tip

A nanometer-sized superconducting quantum interference device (nanoSQUID) is fabricated on the apex of a sharp quartz tip and integrated into a scanning SQUID microscope. A simple self-aligned fabrication method results in nanoSQUIDs with diameters down to 100 nm with no lithographic processing. An aluminum nanoSQUID with an effective area of 0.034 microm2 displays flux sensitivity of 1.8 x 10(-6) Phi(0)/Hz(1/2) and operates in fields as high as 0.6 T. With projected spin sensitivity of 65 micro(B)/Hz(1/2) and high bandwidth, the SQUID on a tip is a highly promising probe for nanoscale magnetic imaging and spectroscopy.

Gate defined quantum confinement in suspended bilayer graphene

Quantum-confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum-confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that open a bandgap, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the energy gap induced by a perpendicular electric field and at B>0 using the quantum Hall ν=0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.

Topological properties determined by atomic buckling in self-assembled ultrathin Bi(110).

Topological insulators (TIs) are a new type of electronic materials in which the nontrivial insulating bulk band topology governs conducting boundary states with embedded spin-momentum locking. Such edge states are more robust in a two-dimensional (2D) TI against scattering by nonmagnetic impurities than in its three-dimensional (3D) variant, because in 2D the two helical edge states are protected from the only possible backscattering. This makes the 2D TI family a better candidate for coherent spin transport and related applications. While several 3D TIs are already synthesized experimentally, physical realization of 2D TI is so far limited to hybrid quantum wells with a tiny bandgap that does not survive temperatures above 10 K. Here, combining first-principles calculations and scanning tunneling microscopy/spectroscopy (STM/STS) experimental studies, we report nontrivial 2D TI phases in 2-monolayer (2-ML) and 4-ML Bi(110) films with large and tunable bandgaps determined by atomic buckling of Bi(110) films. The gapless edge states are experimentally detected within the insulating bulk gap at 77 K. The band topology of ultrathin Bi(110) films is sensitive to atomic buckling. Such buckling is sensitive to charge doping and could be controlled by choosing different substrates on which Bi(110) films are grown.

The nature of localization in graphene under quantum Hall conditions

The effect of disorder in conventional two-dimensional electron systems is usually described in terms of individual electrons interacting with an underlying disorder potential. Scanning single-electron transistor measurements of graphene in a strong magnetic field indicate that in this system, coulombic interactions between electrons must also be taken into account.

Anomalous conductance quantization in carbon nanotubes.

Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e(2)/h, the quantum of conductance for a single (nondegenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Controlled Growth of 1D MoSe2 Nanoribbons with Spatially Modulated Edge States

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) possess interesting one-dimensional (1D) properties at its edges and inversion domain boundaries, where properties markedly different from the 2D basal plane, such as 1D metallicity and charge density waves, can be observed. Although 2D TMDCs crystals are widely grown by chemical vapor deposition (CVD), the fabrication of 1D TMDCs ribbons is challenging due to the difficulty to confine growth in only one dimension. Here we report the controlled growth of MoSe2 nanoribbons with an aspect ratio >100 by using prepatterned Se reconstructions on Au(100). Using scanning tunneling microscope and spectroscopy (STM/STS), the atomic and electronic structure of MoSe2 nanoribbons are studied. The ultranarrow ribbons show metallic behavior, while wider ribbons show a crossover from metallic to semiconducting behavior going from the edge to the center of the ribbon. The observed conductance modulations of the ultranarrow ribbons are attributed to 1D Moiré pattern. Remarkably, it shows a different periodicity compared with the 2D Moiré pattern in wider ribbons indicating that the 1D system is softened due to the high ratio of edge to basal plane bonds. Further, we demonstrated that the nanoribbons are stable against ambient conditions, which suggests that 1D TMDCs can be exploited for further applications.