Jens Peter Konrath

Impact of sputter deposition parameters on molybdenum nitride thin film properties

Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.

Nitrogen incorporation in sputter deposited molybdenum nitride thin films

In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo2N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

Controlling 4H–SiC Schottky Barriers by Molybdenum and Molybdenum Nitride as Contact Materials

In this paper, Schottky diodes, consisting of an n-doped 4H-silicon carbide substrate, and molybdenum and molybdenum nitride thin-film metallization, are presented. By the variation of the nitrogen amount in the molybdenum nitride thin films, we successfully manage to adjust the effective Schottky barrier height in the range 0.68-1.03 eV at room temperature. In addition, the temperature dependence of the Schottky barrier height can be influenced by the nitrogen fraction used during sputter deposition. The electrical behavior of the junctions is analyzed using current over voltage (I/V ) and capacitance over voltage (C/V ) measurements in a temperature range of 25 °C-300 °C and 25 °C-175 °C, respectively. The characteristics are evaluated, and typical diode parameters are extracted.