Jeon-Hong Kang

An international Comparison Measurement of Silicon Wafer Sheet Resistance using the Four-point Probe Method

With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are 10 Ω, 100Ω, and 1000 Ω; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for 10Ω, 0.17% for 100Ω, and 0.12% for 1000Ω. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.

Development of a Handheld Sheet Resistance Meter with the Dualconfiguration Four-point Probe Method

A handheld sheet resistance meter that can easily and quickly measure the sheet resistance of indium tin oxide films was developed. The dual-configuration four-point probe method was adopted for this instrument, which measured sheet resistance in the range from 0.26 /sq. to 2.6 k/sq. with 0.3 % ~ 0.5 % uncertainty. The screen of the instrument displayed the sheet resistance when the probe was in contact with the sample surface and the value continued to be displayed during the probe contact. Even after separating the probe from the surface, the value was still displayed on the screen and could be read easily. A feature of the instrument was the use of the dual-configuration technique to reduce edge effects markedly compared with the single-configuration technique and its ease of operation without applying correction factors for sample size and thickness.

Development of Conductivity Standards for Metals using the van der Pauw Method

The widely-used measurement methods for conductivity of non-magnetic metals are van der Pauw method, Two Point Probe method and Eddy Current method. Among them a more simpler and easier method is the Eddy Current method and an instrument using the method is a Conductivity Meter which can measure a conductivity by contacting its probe on a sample surface. However, conductivity standards are essentially needed to confirm the meter`s performance or to calibrate it. In this study, six kinds of the standards which are made of Cu, Al-1, Al-2, brass, Zn and SUS-316 are developed and conductivity ranges for the standards are 2.27 %IACS ~ 101.6 %IACS with measurement uncertainty of less than 0.3 %.

Precision Measurement of Silicon Wafer Resistivity Using Single-Configuration Four-Point Probe Method

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

Uncertainty Analysis and Compensation of the Cell for Permittivity Measurement of Solid Materials

The commercial parallel plate electrodes system with guard-ring electrode have been widely used for measurement of dielectric constants of solid materials. And the specification of the electrodes system is about 1 % of measurement uncertainty. This measurement uncertainty is only estimated the error come from mechanical measurements such as the area of the electrodes and the gap between the electrodes except the error come from the air gap between the electrodes and dielectric specimen. Because it is impossible to measure the air gap. This study analyze the total measurement uncertainties of the commercial dielectric constant test cell using 3 kinds of Standard Reference Materials. As a results, the total measurement uncertainty is much bigger than 1 % and the most of the uncertainty can be reduced by compensation of the error values evaluated in this study.