Jeonghoon Yun

A self-heated silicon nanowire array: selective surface modification with catalytic nanoparticles by nanoscale Joule heating and its gas sensing applications

We demonstrated novel methods for selective surface modification of silicon nanowire (SiNW) devices with catalytic metal nanoparticles by nanoscale Joule heating and local chemical reaction. The Joule heating of a SiNW generated a localized heat along the SiNW and produced endothermic reactions such as hydrothermal synthesis of nanoparticles or thermal decomposition of polymer thin films. In the first method, palladium (Pd) nanoparticles could be selectively synthesized and directly coated on a SiNW by the reduction of the Pd precursor via Joule heating of the SiNW. In the second method, a sequential process composed of thermal decomposition of a polymer, evaporation of a Pd thin film, and a lift-off process was utilized. The selective decoration of Pd nanoparticles on SiNW was successfully accomplished by using both methods. Finally, we demonstrated the applications of SiNWs decorated with Pd nanoparticles as hydrogen detectors. We also investigated the effect of self-heating of the SiNW sensor on its sensing performance.

Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H2) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H2 detection. The drain current of the PdNP-decorated device reversibly responds to H2 at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.

Interfacial toughening of solution processed Ag nanoparticle thin films by organic residuals

Reliable integration of solution processed nanoparticle thin films for next generation low-cost flexible electronics is limited by mechanical damage in the form of delamination and cracking of the films, which has not been investigated quantitatively or systematically. Here, we directly measured the interfacial fracture energy of silver nanoparticle thin films by using double cantilever beam fracture mechanics testing. It was demonstrated that the thermal annealing temperature and period affect the interfacial fracture energy. Also it was found that the interfacial fracture resistance can be maximized with optimized annealing conditions by the formation of organic residual bridges during the annealing process.

Self-heated silicon nanowires for high performance hydrogen gas detection

Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes.

Localized Liquid-Phase Synthesis of Porous SnO2 Nanotubes on MEMS Platform for Low-Power, High Performance Gas Sensors

We have developed highly sensitive, low-power gas sensors through the novel integration method of porous SnO2 nanotubes (NTs) on a micro-electro-mechanical-systems (MEMS) platform. As a template material, ZnO nanowires (NWs) were directly synthesized on beam-shaped, suspended microheaters through an in situ localized hydrothermal reaction induced by local thermal energy around the Joule-heated area. Also, the liquid-phase deposition process enabled the formation of a porous SnO2 thin film on the surface of ZnO NWs and simultaneous etching of the ZnO core, eventually to generate porous SnO2 NTs. Because of the localized synthesis of SnO2 NTs on the suspended microheater, very low power for the gas sensor operation (<6 mW) has been realized. Moreover, the sensing performance (e.g., sensitivity and response time) of synthesized SnO2 NTs was dramatically enhanced compared to that of ZnO NWs. In addition, the sensing performance was further improved by forming SnO2-ZnO hybrid nanostructures due to the heterojunction effect.

Quantitative probing of tip-induced local cooling with a resistive nanoheater/thermometer

This article reports the investigation of tip-induced local cooling when an atomic force microscope (AFM) cantilever tip scans over a joule-heated Pt nanowire. We fabricated four-point-probe Pt resistive nanothermometers having a sensing area of 250 nm × 350 nm by combining electron-beam lithography and photolithography. The electrical resistance of a fabricated nanothermometer is ∼27.8 Ω at room temperature and is linearly proportional to the temperature increase up to 350 K. The equivalent temperature coefficient of resistance is estimated to be (7.0±0.1)×10−4 K−1. We also joule-heated a nanothermometer to increase its sensing area temperature up to 338.5 ± 0.2 K, demonstrating that the same device can be used as a nanoheater. An AFM probe tip scanning over a heated nanoheater/thermometers sensing area induces local cooling due to heat conduction through solid-solid contact, water meniscus, and surrounding air. The effective contact thermal conductance is 32.5 ± 0.8 nW/K. These results contribute to th...

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H2 sensitivity (Δ I/ I0 > 700-0.5% H2 concentrations) and fast response time (τ10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

Temperature measurement of Joule heated silicon micro/nanowires using selectively decorated quantum dots

We developed a novel method to measure local temperature at micro/nano-scale regions using selective deposition of quantum dots (QDs) as a sensitive temperature probe and measured the temperature of Joule heated silicon microwires (SiMWs) and silicon nanowires (SiNWs) by this method. The QDs are selectively coated only on the surface of the SiMWs and SiNWs by a sequential process composed of selective opening of a polymethyl methacrylate layer via Joule heating, covalent bonding of QDs, and lift-off process. The temperatures of the Joule-heated SiMWs and SiNWs can be measured by characterizing the temperature-dependent shift of photoluminescence peak of the selectively deposited QDs even with far-field optics. The validity of the extracted temperature has been also confirmed by comparing with numerical simulation results. The proposed method can potentially provide micro/nanoscale measurement of localized temperatures for a wide range of electrical and optical devices.

Feedback control of local hotspot temperature using resistive on-substrate nanoheater/thermometer

This article reports the active control of a local hotspot temperature for accurate nanoscale thermal transport measurement. To this end, we have fabricated resistive on-substrate nanoheater/thermometer (NH/T) devices that have a sensing area of ∼350 nm × 300 nm. Feedback-controlled temporal heating and cooling experiments of the NH/T device confirm that the feedback integral gain plays a dominant role in devices response time for various setpoint temperatures. To further verify the integration of the feedback controller with the NH/T devices, a local tip-induced cooling experiment is performed by scanning a silicon tip over the hotspot area in an atomic force microscope platform. By carefully optimizing the feedback gain and the tip scan speed, we can control the hotspot temperature with the accuracy of ∼±1 K for a broad range of setpoints from 325 K to 355 K. The obtained tip-substrate thermal conductance, including the effects of solid-solid conduction, water meniscus, air conduction, and near-field thermal radiation, is found to be a slightly increasing function of temperature in the range of 127 ± 25 to 179 ± 16 nW/K. Our work demonstrates the reliable controllability of a local hotspot temperature, which will allow the further improvement of various nanoscale thermal metrologies including scanning thermal microscopy and nanoscale thermometry.