Jeongkyun Roh

Overcoming tradeoff between mobility and bias stability in organic field-effect transistors according to the self-assembled monolayer chain lengths

This study examined the relationship between the mobility and bias stability of pentacene-based organic field-effect transistors (OFETs) regarding a self-assembled monolayer (SAM) treatment. For this systematic study, four types of silazane-based SAMs with different alkyl chain lengths in the range of 1–8 were used. Silazane-based SAMs have an advantage of processability due to the mild reaction conditions. The mobility was increased from 0.29 without SAM to 0.46, 0.61, 0.65, and 0.84 cm2/V s after the SAM-treatment with an alkyl chain length of 1, 3, 4, and 8, respectively. On the other hand, inverse proportional relationship was observed between the bias stability and SAM alkyl chain length. Under high gate bias stress (equivalent to electric field of 3 MV/cm) for 2 h, the threshold voltage shift of the OFET was decreased from 12.19 V without SAM to 5.69 V with a short SAM-treatment (alkyl chain length of 1) and 7.14 V with a long SAM-treatment (alkyl chain length of 8). This is the significant finding ...

Effect of nanoscale SubPc interfacial layer on the performance of inverted polymer solar cells based on P3HT/PC71BM.

The effect of a nanoscale boron subphthalocyanine chloride (SubPc) interfacial layer on the performance of inverted polymer solar cells based on poly (3-hexyl thiophene) (P3HT) and [6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) was studied. When a 1 nm SubPc layer was introduced between the active layer (P3HT:PC(71)BM) and MoO(x) in the device with ITO/ZnO/P3HT:PC(71)BM/SubPc/MoO(x)/Al configuration, the power conversion efficiency (PCE) was increased from 3.42 (without SubPc) to 3.59%. This improvement is mainly attributed to the enhanced open-circuit voltage from 0.62 to 0.64 V. When the Flory-Huggins interaction parameters were estimated from the solubility parameters through the contact angle measurement, it revealed that the interaction between SubPc and PC(71)BM is more attractive than that between SubPc and P3HT at the interface of P3HT:PC(71)BM/SubPc, through which charges are well transported from the active layer to the anode. This is supported by a decrease of the contact resistance from 5.49 (SubPc 0 nm) to 0.94 MΩ cm (SubPc 1 nm). The photoelectron spectra provide another evidence for the enhanced PCE, exhibiting that the 1 nm thick SubPc layer extracts more photoelectrons from the active layer than other thicknesses.

Low frequency noise characteristics in multilayer WSe2 field effect transistor

This paper investigates the low-frequency noise properties of multilayer WSe2 field effect transistors (FETs) in subthreshold, linear, and saturation regime. The measured noise power spectral density of drain current (SID) shows that the low-frequency noise in multilayer WSe2 FET fits well to a 1/fγ power law with γ ∼ 1 in the frequency range of 10 Hz–200 Hz. From the dependence of SID on the drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism from all operation regimes in multilayer WSe2 FET. Extracted Hooges parameter in this study is within the value of 0.12, comparable to those of the transition metal dichalcogenide FETs in recent reports.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits.

Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors

We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.9 eV) to 4.66 eV and 5.24 eV with TP and PFBT treatments, respectively. The charge carrier densities were controlled by the SAM treatment in both dominant and non-dominant carrier-channel regimes. This work demonstrates that control of the charge carrier densities can be efficiently achieved by modifying the injection property with SAM treatment; thus, this approach can achieve polarity conversion of the OFETs.

Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer

We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C(71)-butyric acid methyl ester (PC(70)BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10(-3) Ω·cm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC(70)BM), the power conversion efficiency increased from 3.7 to 5.6%.

Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors

We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (ΔV(HYS) ∼ 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability with time (∼50 days) of MoS2 FETs with (or without) CYTOP encapsulation. The extracted lifetime of the device with CYTOP passivation in air was dramatically improved from 7 to 377 days, and even for the short-term bias stability, the experimental threshold voltage shift, outstandingly well-matched with the stretched exponential function, indicates that the device without passivation has approximately 25% larger the barrier distribution (ΔE(B) = k(B)T(o)) than that of a device with passivation. This work suggests that CYTOP encapsulation can be an efficient method to isolate external gas (O2 and H2O) effects on the electrical performance of FETs, especially with low-dimensional active materials like MoS2.

High-gain complementary metal-oxide-semiconductor inverter based on multi-layer WSe2 field effect transistors without doping

A high-gain complementary metal-oxide-semiconductor (CMOS) logic inverter was implemented by fabricating p- and n-type field effect transistors (FETs) based on multi-layer WSe2 on the same wafer. Au as a high work-function metal is contacted to WSe2 for the source/drain of the p-type FET. The n-type FET has an Al electrode contacted to WSe2 for the source/drain. Both FETs were designed to have similar on-current densities (>10−7 A μm−1) and high on/off current ratios (>106). The inverter shows excellent switching characteristics including relatively high voltage gains (>25) and high noise margins (>0.9) in the range of supply voltage from 2 V to 8 V. This work has a great significance in the realization of a CMOS logic gate based on WSe2 without an additional doping scheme.

Negligible hysteresis of molybdenum disulfide field-effect transistors through thermal annealing

ABSTRACT Large hysteresis behaviors on molybdenum disulfide (MoS2) field-effect transistors (FETs) without passivation have been typically observed, which can be one of the obstacles to understanding the intrinsic properties of MoS2 layers. Reported herein is the fact that the negligible hysteresis gap of MoS2 can be achieved through thermal annealing without any further passivation layer. The hysteresis gap of the MoS2 FETs with thermal annealing was reduced to 0.08 V, and the device showed good field-effect mobility (23.3 cm2/V s) and a high on-to-off ratio (∼107). The hysteresis-free MoS2 FETs were systematically investigated by analyzing both the contact property and the bias stability. Furthermore, low contact resistance (6.21 Ω cm) and excellent bias stability with a 1.29 × 108 sec relaxation time were obtained.

Simultaneous Engineering of the Substrate Temperature and Mixing Ratio to Improve the Performance of Organic Photovoltaic Cells.

In this study, we investigated the effect of the donor/acceptor mixing ratio and the substrate temperature (T(SUB)) during the co-deposition process on the performance of bulk heterojunction organic photovoltaic cells. We found that the ratio of dispersed donor islands (less than 10 nm), which hinders charge carrier transport, increased as the donor concentration (C(D)) increased in the film processed at room temperature. By contrast, the donor cluster (larger than 10 nm), providing percolation paths for the carriers, was enlarged in the film containing a high C(D) fabricated at high T(SUB) (70 degrees C). This enhanced phase separation in the mixed layer led to an improved fill factor and a decreased activation energy of the short-circuit current (J(SC)). Therefore, we demonstrated a 23% improvement in the device performance by employing an elevated T(SUB) and optimized mixing ratio in comparison with the device fabricated at room temperature.