Jesse Frantz

Ceramic Laser Materials

Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG) ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements.

Waveguide amplifiers in sputtered films of Er3+-doped gallium lanthanum sulfide glass.

Waveguide amplifiers fabricated in Er3+-doped gallium lanthanum sulfide (GLS) glass are demonstrated. GLS is deposited onto fused silica substrates by RF magnetron sputtering, and waveguides are patterned by use of the lift-off technique. The waveguides exhibit a total internal gain of 6.7 dB (2.8 dB/cm) for a signal with a wavelength of 1.55 mum. This experiment is, to the best of our knowledge, the first demonstration of gain in an Er3+-doped chalcogenide glass waveguide. The fabrication methods we apply, if used with other rare earth dopants, could potentially be employed to produce sources operating in the mid-IR.

10% Yb3+-Lu2O3 ceramic laser with 74% efficiency.

We demonstrate laser oscillation at 1080 nm with more than 16 W of output power and with an optical-to-optical slope efficiency of up to 74% using a 10% Yb3+ doped Lu2O3 ceramic made by hot pressing. This represents the highest output power and efficiency obtained for a Yb3+ doped Lu2O3 ceramic and demonstrates the feasibility for power scaling.

Anti-reflective surface structures for spinel ceramics and fused silica windows, lenses and optical fibers

Anti-reflective surfaces structures (ARSS) have been successfully fabricated on fused silica windows, lenses and fibers, and spinel ceramics. The reflection loss for spinel was reduced from 7% per surface to 0.9%. For fused silica with ARSS, the reflection loss was reduced to 0.02% near 1 µm. Pulsed laser damage thresholds at 1.06 µm were measured and thresholds as high as 100 J/cm2 were obtained for fused silica windows of up to 10 cm in diameter with ARSS and 850 J/cm2 for silica fibers with ARSS on the end faces. Spinel samples with ARSS showed damage thresholds more than two times higher than that of spinel with traditional AR coatings.

Ceramic laser materials

Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:YAG ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements.

Quaternary Sputtered Cu(In,Ga)Se 2 Absorbers for Photovoltaics: A Review

Quaternary sputtering is a promising alternative to more established deposition methods for the fabrication of Cu(In,Ga)Se2 (CIGS) thin films for photovoltaics (PV). In this technique, a single sputtering target containing all four constituents is employed to deposit the CIGS film. Quaternary sputtering offers several advantages over other deposition methods, including excellent uniformity over large areas, high material usage, and less reliance on toxic Se precursors such as H2Se. Despite these advantages, several drawbacks remain. To date, devices fabricated by quaternary sputtering without additional selenization have been limited in efficiency to about 11%, and realizing bandgap grading in order to match the performance of the best evaporated devices presents a challenge. We discuss the prospects for quaternary sputtering as a fabrication technique for CIGS and highlight areas of research that may result in improved performance. Target fabrication and usage is reviewed. We also present results for films and devices including data for the optical constants of sputtered CIGS. Some recent previously unpublished results, including a study of impurities in CIGS sputtering targets and the first demonstration of a CIGS device on a flexible glass substrate, are discussed

Overview of transparent optical ceramics for high-energy lasers at NRL

In this review, we present our recent research progress at the Naval Research Laboratory in the development of highly transparent and rugged ceramic window materials such as MgAl2O4 spinel and β-SiC; high-power solid-state laser gain materials based on sesquioxide such as Yb(3+):Y2O3, Yb(3+):Lu2O3, and Ho(3+):Lu2O3; and composite ceramics in the application for high-energy lasers. Various powder synthesis/purification methods and powder post-process techniques necessary to create high-purity powders are described. Ceramic fabrication processes and chemical, morphological, and optical properties of the ceramics developed at the Naval Research Laboratory (NRL) are highlighted. We also report high-efficiency lasing from a hot-pressed rare-earth sesquioxide single layer and composite ceramics made from coprecipitated powder.

Effect of Growth Temperature on GaAs Solar Cells at High MOCVD Growth Rates

Increasing epitaxial growth rate is an important path toward III-V solar cell cost reductions; however, photovoltaic device performance has been shown to degrade with increasing growth rate. In this study, gallium arsenide (GaAs) material has been deposited via metal-organic chemical vapor deposition (MOCVD) at growth rates varying between 14 and 60 μm/h. Deep-level transient spectroscopy is utilized to elucidate an exponential rise in EL2 trap density as a function of growth rate when all other growth conditions are held constant. Evidence is provided that this EL2 defect is responsible for limiting the Shockley-Read-Hall (SRH) lifetime of very high growth rate solar cells. The effect of growth temperature on devices at high growth rate is subsequently investigated as a strategy to reduce trap density and improve solar cell performance. From this investigation, EL2 trap density is suppressed, and single-junction on-substrate GaAs solar cells grown at 60 μm/h are reported with 1.01 V 1-sun open-circuit voltage and 23.8% AM1.5G efficiency.

Review of antireflective surface structures on laser optics and windows

We present recent advancements in structured, antireflective surfaces on optics, including crystals for high-energy lasers as well as windows for the infrared wavelength region. These structured surfaces have been characterized and show high transmission and laser damage thresholds, making them attractive for these applications. We also present successful tests of windows with antireflective surfaces that were exposed to simulated harsh environments for the application of these laser systems.

Structural and electronic characteristics of Cu(In,Ga)Se 2 thin films sputtered from quaternary targets

Although the advantages of sputter deposition for large area, uniform deposition are well known, it has long been believed that sputtering Cu(In,Ga)Se2 (CIGS) from a quaternary sputtering target yields films with morphological and electronic properties that make them unsuitable for use in high-efficiency photovoltaic devices. Recent work, however, has demonstrated that this deposition method can produce dense, polycrystalline, highly oriented films with the desired stoichiometry. Devices built with these films exhibit efficiencies >;10%. While effective parameters for target composition and deposition conditions have been achieved, variation from these conditions can result in a wide array of morphologies, even while composition remains near that of stoichiometric CIGS. In this paper, we review the broad range of structural and electronic properties that result from various sets of target compositions and deposition conditions. Films deposited under some conditions are similar in important respects - their composition, a dense structure composed of ~1 μm sized grains, and the presence of a MoSe2 layer - to those of evaporated CIGS. We discuss how these results point towards the possibility of higher-efficiency sputtered CIGS.