Jiabao Zheng

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials

Mechanical exfoliation has been a key enabler of the exploration of the properties of two-dimensional materials, such as graphene, by providing routine access to high-quality material. The original exfoliation method, which remained largely unchanged during the past decade, provides relatively small flakes with moderate yield. Here, we report a modified approach for exfoliating thin monolayer and few-layer flakes from layered crystals. Our method introduces two process steps that enhance and homogenize the adhesion force between the outermost sheet in contact with a substrate: Prior to exfoliation, ambient adsorbates are effectively removed from the substrate by oxygen plasma cleaning, and an additional heat treatment maximizes the uniform contact area at the interface between the source crystal and the substrate. For graphene exfoliation, these simple process steps increased the yield and the area of the transferred flakes by more than 50 times compared to the established exfoliation methods. Raman and AFM characterization shows that the graphene flakes are of similar high quality as those obtained in previous reports. Graphene field-effect devices were fabricated and measured with back-gating and solution top-gating, yielding mobilities of ∼4000 and 12,000 cm(2)/(V s), respectively, and thus demonstrating excellent electrical properties. Experiments with other layered crystals, e.g., a bismuth strontium calcium copper oxide (BSCCO) superconductor, show enhancements in exfoliation yield and flake area similar to those for graphene, suggesting that our modified exfoliation method provides an effective way for producing large area, high-quality flakes of a wide range of 2D materials.

Efficient Photon Collection from a Nitrogen Vacancy Center in a Circular Bullseye Grating

Luozhou Li, 2 Edward H. Chen, 2 Jiabao Zheng, Sara L. Mouradian, Florian Dolde, Tim Schröder, Sinan Karaveli, Matthew L. Markham, Daniel J. Twitchen, and Dirk Englund ∗ These authors contributed equally. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States Dept. of Electrical Engineering, Columbia University, New York, NY 10027, United States Element Six, 3901 Burton Drive, Santa Clara, CA 95054, USA (Dated: 11 Sept 2014)

Quantum nanophotonics in diamond [Invited]

The past two decades have seen great advances in developing color centers in diamond for sensing, quantum information processing, and tests of quantum foundations. Increasingly, the success of these applications as well as fundamental investigations of light–matter interaction depend on improved control of optical interactions with color centers—from better fluorescence collection to efficient and precise coupling with confined single optical modes. Wide ranging research efforts have been undertaken to address these demands through advanced nanofabrication of diamond. This review will cover recent advances in diamond nano- and microphotonic structures for efficient light collection, color center to nanocavity coupling, hybrid integration of diamond devices with other material systems, and the wide range of fabrication methods that have enabled these complex photonic diamond systems.

A MoTe 2 -based light-emitting diode and photodetector for silicon photonic integrated circuits

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 106) photonic crystal cavities with low mode volume (Vm = 1.062 × (λ/n)3), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 103.

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.

Invited Article: Precision nanoimplantation of nitrogen vacancy centers into diamond photonic crystal cavities and waveguides

We demonstrate a self-aligned lithographic technique for precision generation of nitrogen vacancy (NV) centers within photonic nanostructures on bulk diamond substrates. The process relies on a lithographic mask with nanoscale implantation apertures for NV creation, together with larger features for producing waveguides and photonic nanocavities. This mask allows targeted nitrogen ion implantation, and precision dry etching of nanostructures on bulk diamond. We demonstrate high-yield generation of single NVs at pre-determined nanoscale target regions on suspended diamond waveguides. We report implantation into the mode maximum of diamond photonic crystal nanocavities with a single-NV per cavity yield of ∼26% and Purcell induced intensity enhancement of the zero-phonon line. The generation of NV centers aligned with diamond photonic structures marks an important tool for scalable production of optically coupled spin memories.

Scalable fabrication of coupled NV center - photonic crystal cavity systems by self-aligned N ion implantation

Towards building large-scale integrated photonic systems for quantum information processing, spatial and spectral alignment of single quantum systems to photonic nanocavities is required. Here, we demonstrate spatially targeted implantation of nitrogen vacancy (NV) centers into the mode maximum of 2-d diamond photonic crystal cavities with quality factors up to 8000, achieving an average of 1.1 ± 0.2 NVs per cavity. Nearly all NV-cavity systems have significant emission intensity enhancement, reaching a cavity-fed spectrally selective intensity enhancement, Fint, of up to 93. Although spatial NV-cavity overlap is nearly guaranteed within about 40 nm, spectral tuning of the NV’s zero-phonon-line (ZPL) is still necessary after fabrication. To demonstrate spectral control, we temperature tune a cavity into an NV ZPL, yielding FintZPL~5 at cryogenic temperatures.

Fast thermal relaxation in cavity-coupled graphene bolometers with a Johnson noise read-out

High sensitivity, fast response time and strong light absorption are the most important metrics for infrared sensing and imaging. The trade-off between these characteristics remains the primary challenge in bolometry. Graphene with its unique combination of a record small electronic heat capacity and a weak electron–phonon coupling has emerged as a sensitive bolometric medium that allows for high intrinsic bandwidths1–3. Moreover, the material’s light absorption can be enhanced to near unity by integration into photonic structures. Here, we introduce an integrated hot-electron bolometer based on Johnson noise readout of electrons in ultra-clean hexagonal-boron-nitride-encapsulated graphene, which is critically coupled to incident radiation through a photonic nanocavity with Q = 900. The device operates at telecom wavelengths and shows an enhanced bolometric response at charge neutrality. At 5 K, we obtain a noise equivalent power of about 10 pW Hz–1/2, a record fast thermal relaxation time, <35 ps, and an improved light absorption. However the device can operate even above 300 K with reduced sensitivity. We work out the performance mechanisms and limits of the graphene bolometer and give important insights towards the potential development of practical applications.A graphene–hBN heterostructure integrated onto a photonic crystal cavity shows enhanced bolometric response owing to improved light absorption and ultrafast thermal relaxation time.

Fiber-Coupled Diamond Micro-Waveguides toward an Efficient Quantum Interface for Spin Defect Centers

We report the direct integration and efficient coupling of nitrogen vacancy (NV) color centers in diamond nanophotonic structures into a fiber-based photonic architecture at cryogenic temperatures. NV centers are embedded in diamond micro-waveguides (μWGs), which are coupled to fiber tapers. Fiber tapers have low-loss connection to single-mode optical fibers and hence enable efficient integration of NV centers into optical fiber networks. We numerically optimize the parameters of the μWG-fiber-taper devices designed particularly for use in cryogenic experiments, resulting in 35.6% coupling efficiency, and experimentally demonstrate cooling of these devices to the liquid helium temperature of 4.2 K without loss of the fiber transmission. We observe sharp zero-phonon lines in the fluorescence of NV centers through the pigtailed fibers at 100 K. The optimized devices with high photon coupling efficiency and the demonstration of cooling to cryogenic temperatures are an important step to realize fiber-based quantum nanophotonic interfaces using diamond spin defect centers.