Jian Aoqun

Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film

Hexagonal GaN epilayer grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) is studied using Raman scattering and photoluminescence in a temperature range from 100 K to 873 K. The model of strain (stress) induced by the different lattice parameters and thermal coefficients of epilayer and substrate as a function of temperature is set up. The frequency and the linewidth of E2high mode in a GaN layer are modelled by a theory with considering the thermal expansion of the lattice, a symmetric decay of the optical phonons, and the strain (stress) in the layer. The temperature-dependent energy shift of free exciton A is determined by using Varshni empirical relation, and the effect of strain (stress) is also investigated. We find that the strain in the film leads to a decreasing shift of the phonon frequency and an about 10meV-increasing shift of the energy in a temperature range from 100 K to 823 K.

Highly sensitive wearable strain sensor based on silver nanowires and nanoparticles

Here, we propose a highly sensitive and stretchable strain sensor based on silver nanoparticles and nanowires (Ag NPs and NWs), advancing the rapid development of electronic skin. To improve the sensitivity of strain sensors based on silver nanowires (Ag NWs), Ag NPs and NWs were added to polydimethylsiloxane (PDMS) as an aid filler. Silver nanoparticles (Ag NPs) increase the conductive paths for electrons, leading to the low resistance of the resulting sensor (14.9 Ω). The strain sensor based on Ag NPs and NWs showed strong piezoresistivity with a tunable gauge factor (GF) at 3766, and a change in resistance as the strain linearly increased from 0% to 28.1%. The high GF demonstrates the irreplaceable role of Ag NPs in the sensor. Moreover, the applicability of our high-performance strain sensor has been demonstrated by its ability to sense movements caused by human talking, finger bending, wrist raising and walking.

Comparison between photoluminescence spectroscopy and photoreflectance spectroscopy in CuGaSe2 epilayer

Photoluminescence (PL) spectroscopy and photoreflectance (PR) spectroscopy are very useful techniques for studying the properties of materials. In this paper, the same material of Cu-rich metal-organic vapour phase epitaxy (MOVPE) grown CuGaSe2 layer is investigated in a temperature range from 20 to 300K to compare these two techniques. Both PL and PR spectra appear red shifted, less intense and broadened. The temperature dependence of interband transitions is studied by using the Manoogian-Leclerc equation. The values of the band gap energy at T = 0K and the effective phonon temperature are estimated. The temperature dependences of intensities and broadenings of PL and PR spectral lines are also analysed. Based on the results of the comparison, the features and applications of the PL and PR can be shown in detail.