Jian-Min Jeng

Enhanced Electron Field Emission Characteristics of Carbon Nanoflakes Prepared by Modified RF Sputtering

Carbon films with flakelike geometry, exhibiting excellent electron field emission (EFE) properties were synthesized by a modified RF sputtering process, which used an Ar:CH4:H2 gas mixture, instead of a conventional Ar:H2 mixture. These films contain nanosized diamonds and allotropic phases (i-carbons and graphites) embedded in amorphous carbon films. The EFE process can be turned on at E0 = 4.83 V/µm, achieving an EFE current density of Je = 280 µA/cm2 at an 8 V/µm applied field. The EFE properties of these flakelike carbon films essentially do not change with processing parameters, indicating that these carbon films are more process-reliable and hence have better potential for application as electron field emitters.

Synthesis of Carbon Nanoflakes by Radio-Frequency Sputtering and Their Field Emission Characteristics

The growth, structure and field emission properties of the two-dimensional carbon nanoflakes (CNFs) produced by radio-frequency (RF) sputtering without any catalyst or special substrate treatment have been investigated. The effects of deposition parameters (such as deposition time, sputtering gas composition, substrate temperature and RF power) on the structure and properties of the CNFs were also studied. Possible growth mechanism of the CNFs has been discussed with time evolution of surface microstructure. These films contain nanosized diamonds and allotropic phases (i-carbons and graphites) embedded in amorphous carbon films. The electron field emission (EFE) process can be turned on at E0=2.8 V/µm, achieving an EFE current density of Je = 1 mA/cm2 at a 5 V/µm applied field. The low turn-on field of 2.8 V/µm for electron field emission suggests that the CNFs could be used as a potential edge emitter.

Fabrication of vertical graphitic nano-partitions for anti-reflection function of silicon solar cells

Vertical standing, thin graphitic nano-partitions were fabricated on quartz and silicon substrates using a reactive plasma sputtering system. These nano-sized partitions act as light reflectors, enhancing the solar absorption of omni-directional incident light. The structure of nano-partitions doubles the output power of the solar cell when illuminated from a 30° to 150° angle of incidence. Such nano-partitions also enhance solar efficiency when reflected light is used to produce more photon absorption. Measurement of reflectance has shown a minimum of 0.49% at a wavelength of 580 nm when nano-partitions are used. The average reflectance of the entire visible regime is 0.85%, which is equivalent to the conventional multi-layer anti-reflection coatings. We also found that this nano-partition system has superior anti-reflection efficiency in a UV regime. This 3D anti-reflection structure provides a promising route to the fabrication of high-efficiency solar cells.

P‐103: Fabrication and Driving Properties of Novel Side‐Anode Field Emission Lamp

In the study we designed the novel-structure field emission lamp (FEL), side-anode FEL. Cathode and anode electrodes are both on one glass substrate. Because the lighting mode of the side-anode FEL is reflection mode, so the lighting efficiency and uniformity are better than other common structure.

P-100: A Power-saving, High Brightness and Uniformity Field Emission Planar Lamp

We successfully fabricated a power-saving, high brightness and uniformity field emission planar lamp (FEL) by simply screen printing process. In order to maximize the output brightness and reach a good lighting uniformity, we create an innoviative emitter pattern and optimize the FEL assembly process. By the innoviative spiral emitter pattern and optimization assembly process, we fabricated the high brightness and uniform lighting FEL. The lighting area of FEL is 325×37 mm2. The FEL can be operated at DC voltage 6.56 KVwith 2 mA current and the brightness is greater than 28000 Cd/m2.

12.4: 7 Inch Field Emission Backlight Unit Assembly Using TiO2 Coated Spacer for LCD Panel

The field emission backlight unit (FEBLU) for liquid crystal display (LCD) panel was fabricated in this work. In order to avoid the space charge on the side of the spacer, the spacer is coated with the TiO2 which acts as the charge leakage layer. By introducing of the TiO2 coated spacers, the assembly of the FEBLU becomes very easy. We have developed the stable 7 inch FEBLU LCD panel which has no discharged breakdown. The FEBLU can be turn-on at (E0)= 1.26 V/μm, working at 2.64 kV applied field.

P‐151: Fabrication of Nano‐Crystalline Graphite Field Emission Device by Thick‐Film Technology

The purpose of this paper is to fabricate nano-crystalline graphite (NCG) material by reactive R.F. magnetron sputtering deposition, then scrape the NCG films to create NCG powder, and finally manufacture this into NCG paste. When depositing the NCG films, the atomic hydrogen from hydrogen and methane was introduced to increase the surface roughness of the NCG films, etch the NCG films to create the NCG sheet structure. It was found that the electron field emission properties are not affected through the heat treatment process during screen-printing. The NCG emitter patterns were manufactured successfully on cathode by printing the NCG paste. The current density of the emission site is 340.1 μA/cm2 at 11 V/μm.

P‐150: Catalyst‐Free Carbon Nanotubes Synthesized on Graphite Flakes by Thermal Chemical Vapor Deposition

In this paper, the carbon nanotubes (CNTs) are synthesized on the micro graphite flakes using mixtures of C2H2 and H2 gases by thermal chemical vapor deposition. We spin the graphite solution on the silicon wafer and dry it, then synthesize the CNTs on the graphite flakes. The synthetic process is a catalyst free technique and the CNTs have no metal inside, so this is an easier technique for synthesizing the CNTs. We change the synthetic time to obtain the optimal conditions for synthesis of the CNTs. The experimental results show that the density and quality of the CNTs could be controlled significantly by the synthetic time. Besides, the field emission properties of the CNTs are also affected greatly by it. The emission current density of the CNTs is 0.5 mA/cm2 at 3 V/μm, and the turn on field is 2.3 V/μm.