Jianliang Qiao

Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode

We compared two reflection-mode negative electron affinity (NEA) GaAs photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. One sample is uniform doping, and another is gradient doping. Experimental curves of spectral response sensitivity and quantum efficiency are obtained. The thicknesses of the two cathodes are both 2.6 microm. The integrated sensitivity of the uniform doping one is 1966 microA/lm, and that of the gradient-doping one is 2421 microA/lm. The escape probability and diffusion length are fitted from the spectral response curves. For the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5 microm. For the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5.5 microm.

Quantum efficiency of GaN photocathode under different illumination

GaN samples are activated by Cs/O under illumination of deuterium lamp, 300 nm monochromatic light with power of 70 μW and 300 nm monochromatic light with power of 35 μW, respectively. Photocurrent is detected before activation under illumination of deuterium lamp. Quantum efficiency (QE) is tested after activation. The results indicate that GaN activated under 300 nm monochromatic light have higher QE than that under deuterium lamp, and no obvious difference is detected between different power 300 nm monochromatic light. The photocurrent before activation inhibits the adsorption of Cs on the GaN surface, which decrease the QE of GaN.

Evolution of surface potential barrier for negative-electron-affinity GaAs photocathodes

The evolution of surface potential barrier for reflection-mode GaAs photocathodes in an ultrahigh vacuum system has been investigated by using spectral response and angle-dependent x-ray photoelectron spectroscopy (ADXPS) measurements at room temperature. The escape probabilities of electrons emitted into vacuum are obtained as a function of the incident electron energy, surface barrier height, and thickness. Based on the new escape probability expressions, we obtain the surface barrier parameters of the reflection-mode negative-electron-affinity (NEA) cathodes from the fit of the spectral response curves by using quantum-efficiency equations. These parameters reveal the evolution of the NEA cathode surface during the degradation process. In addition, the surface layer structure of both the freshly activated and degraded cathodes is calculated from the ADXPS spectra. The calculated results are in fair agreement with the fitted barrier parameters.

Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system

The stability and photoemission characteristics for reflection-mode GaAs photocathodes in a demountable vacuum system have been investigated by using spectral response and x-ray photoelectron spectroscopy measurements at room temperature. We find that the shape of the spectral response curve for the cathode changes with time in the vacuum system, but after applying fresh cesium to the degraded cathode, the spectral response can almost be restored. The change and restoration of curve shape are mainly attributed to the evolution of the surface barrier. We illustrate the evolution and analyze the influence of the barrier on the spectral response of the cathode

Activation experiments and quantum efficiency theory on gradient-doping NEA GaAs photocathodes

Two gradient-doping GaAs photocathodes were designed and activated, the achieved highest integral sensitivity for the gradient-doping cathode is 2178μA/lm, which is much higher than that of uniform-doping cathode. The increase in the integral sensitivity is attributed to the electric field induced in the active layer of gradient-doping cathode. We analyze the transported mechanism of gradient-doping cathodes and solve the quantum efficiency equations of exponential-doping cathode, which is a special gradient-doping cathode with a constant induced electric field, from the one-dimensional continuity equations. According to these equations, we calculate the theoretical quantum yield of the exponential-doping cathodes, and compare the performance of exponential-doping cathodes with that of uniform-doping cathodes. The theoretical results show that the exponential-doping structure can increase the quantum yield of photocathodes evidently, for the transmission-mode cathodes the increase is even more pronounced.

Activation and evaluation of GaN photocathodes

Gallium Nitride (GaN) photocathodes are potentially attractive as UV detective materials and electron sources. Based on the activation and evaluation system for GaAs photocathode, which consists of ultra-high vacuum (UHV) activation chamber, multi-information measurement system, X-ray photoelectron spectroscopy (XPS), and ultraviolet ray photoelectron spectroscopy (UPS), the control and measurement system for the activation of UV photocathodes was developed. The developed system, which consists of Xenon lamp, monochromator with scanner, signal-processing module, power control unit of Cs and O source, A/D adapter, digital I/O card, computer and software, can control the activation of GaN photocathodes and measure on-line the spectral response curves of GaN photocathodes. GaN materials on sapphire substrate were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) with p-type Mg doping. The GaN materials were activated by Cs-O. The spectral response and quantum efficiency (QE) were measured and calculated. The experiment results are discussed.

Preparation of negative electron affinity gallium nitride photocathode

Negative electron affinity (NEA) Gallium Nitride (GaN) photocathode is an ideal new kind of UV photocathode. NEA GaN photocathode is widely used in such fields as high-performance ultraviolet photoelectric detector, electron beam lithography etc. The preparation of negative electron affinity gallium nitride photocathode relates to the growth technology, the cleaning method, the activation method and the evaluation of photocathode. The mainstream growth technology of GaN photocathode such as metal organic chemistry vapor phase deposits technology, molecule beam epitaxial technology and halide vapor phase epitaxial technology were discussed. The chemical cleaning method and the heat cleaning method for GaN photocathode were given in detail. After the chemical cleaning, the atom clean surface was gotten by a 700 °C heat about 20 minutes in the vacuum system. The activation of GaN photocathode can be realized with only Cs or with Cs/O alternately. Using the activation and evaluation system for NEA photocathode, the photocurrent curve during Cs activation process for GaN photocathode was gotten. The evaluation of photocathode can be done by measuring the quantum efficiency. Employing the UV spectral response measurement instrument, the spectral response and quantum efficiency of NEA GaN photocathode were measured. The measured quantum efficiency of reflection-mode NEA GaN photocathode reached up to 37% at 230 nm.

Study of photoemission mechanism for varied doping GaN photocathode

Negative electron affinity (NEA) GaN photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive threshold and so on. The quantum efficiency is an important parameter for the preparation and evaluation of NEA GaN photocathode. The varied doping GaN photocathode has the directional inside electric field within the material, so the higher quantum efficiency can be obtained. The varied doping NEA GaN photocathode has better photoemission performance. According to the photoemission theory of NEA GaN photocathode, the quantum efficiency formulas for uniform doping and varied doping NEA GaN photocathodes were given. In the certain condition, the quantum efficiency formula for varied doping GaN photocathode consists with the uniform doping. The activation experiment was finished for varied doping GaN photocathode. The cleaning method and technics for varied doping GaN photocathode were given in detail. To get an atom clean surface, the heat cleaning must be done after the chemical cleaning. Using the activation and evaluation system for NEA photocathode, the varied doping GaN photocathode was activated with Cs and O, and the photocurrent curve for varied doping GaN photocathode was gotten.

Research on the performance of thermal shock and stress with infrared optical domes

The development of infrared optical materials is always closely related to the research and exploration of material science. The infrared optical domes bears shock and produces stress when the infrared optical domes mounted on the missile moving at a high speed is shocked by high temperature. According to aerodynamics theory and thermo shock theory, the surge current will be transferred to optical parts through holding up layer and warms the surface of optical parts when infrared optical parts are shocked by high temperature. A compress stress is formed on the hot external surface of optical parts forms and a tension stress is formed on the internal surface or optical parts under the circumstance of the edge of optical parts being fixed. The windows of optical parts become curvature radius of lens with the function of pressure difference which can cause aberration change. The brittle fracture of material will be caused if peak stress is beyond the strength which is permitted for infrared materials. Therefore, limits to design of windows thickness is proposed in this paper.

Thermal research of infrared sight signal processing circuit board under temperature shock environment

Thermal stability technology of signal processing circuit infrared sight is studied under temperature shock. Model parameters and geometry is configured for FPGA devices (EP1C20F400C8), solder material and PCB. Signal circuit boards of full array BGA distribution are simulated and analyzed by thermal shock and waveform through engineering finite element analysis software. Because solders of the whole model have strong stress along Y direction, initial stress constraints along Y direction are primarily considered when the partial model of single solder is imposed by thermal load. When absolute thermal loads stresses of diagonal nodes with maximum strains are separated from the whole model, interpolation is processed according to thermal loads circulation. Plastic strains and thermal stresses of nodes in both sides of partial model are obtained. The analysis results indicate that with thermal load circulation, maximum forces of each circulation along Y direction are increasingly enlarged and with the accumulation of plastic strains of danger point, the composition will become invalid in the end.