Jiaoqing Pan

Surface-plasmon-polariton whispering-gallery mode analysis of the graphene monolayer coated InGaAs nanowire cavity

In this article, we proposed and numerically studied the surface plasmon polariton whispering gallery mode properties of the graphene coated InGaAs nanowire cavity. The quality factor and the mode area were investigated as a function of the chemical potential, the cavity radius and the wavelength. A high cavity quality factor of 235 is predicted for a 5 nm radius cavity, accompanied by a mode area as small as3.75×10(-5)(λ(0))(2), when the chemical potential is 1.2 eV. The proposed structure offers a potential solution to high density integration of the nanophotonic devices with an ultra-compact footprint.

A Selective-Area Metal Bonding InGaAsP–Si Laser

A 1.55-μ m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm2 and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

Nanofocusing of mid-infrared electromagnetic waves on graphene monolayer

Nanofocusing of mid-infrared (MIR) electromagnetic waves on graphene monolayer with gradient chemical potential is investigated with numerical simulation. On an isolated freestanding monolayer graphene sheet with spatially varied chemical potential, the focusing spot sizes of frequencies between 44 THz and 56 THz can reach around 1.6 nm and the intensity enhancement factors are between 2178 and 654. For 56 THz infrared, a group velocity as slow as 5×10−5 times of the light speed in vacuum is obtained at the focusing point. When the graphene sheet is placed on top of an aluminum oxide substrate, the focusing spot size of 56 THz infrared reduces to 1.1 nm and the intensity enhancement factor is still as high as 220. This structure offers an approach for focusing light in the MIR regime beyond the diffraction limit without complicated device geometry engineering.

Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material

A 1.5-μ.m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-coupling material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm2 at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.

4-lambda InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width

A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed feedback gratings based on selective-area metal bonding technology. The lasers have emission peaks between 1539.9 and 1546.1 nm with a wavelength spacing of about 2.0 nm. The single laser has a typical threshold current of 50 mA and side-mode suppression ratio of 20 dB. The silicon waveguides are fabricated simply by standard photolithography and holographic lithography which are CMOS compatible.

Investigation of plasmonic whispering-gallery mode characteristics for graphene monolayer coated dielectric nanodisks

In this Letter, we theoretically studied high-quality (Q) factor plasmonic whispering-gallery modes (WGMs) with ultrasmall mode volumes in graphene monolayer coated semiconductor nanodisks in the mid-infrared range. The influence of the chemical potential, the relaxation time of graphene, and the radius of the nanodisk on the cavity Q factor and the mode volume was numerically investigated. The numerical simulations showed that the plasmonic WGMs excited in this cavity had a deep subwavelength mode volume of 1.4×10(-5)(λ(0)/2n)(3), a cavity Q factor as high as 266 at a temperature lower than 250 K, and, consequently, a large Purcell factor of ∼1.2×10(7) when the chemical potential and relaxation time were assumed to be 0.9 eV and 1.4 ps, respectively. The results provide a possible application of plasmonic WGMs in the integration of nano-optoelectronic devices based on graphene.

40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB DC extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.

Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate

Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex {111} B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.

High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ∼51 nm at a center wavelength of 1060 nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

An ultrabroad band omni-directional anti-reflective coating with quasi-gradient refractive index distribution based on Si–SiOxNy–SiO2 materials system

An ultrabroad band omni-directional antireflective coating was fabricated using both reactive magnetron sputtering and glancing angled electron beam evaporation methods. Gradient index amorphous Si, SiNx, and SiOxNy thin films were deposited by tuning the flow rate of the reactive gases, while the gradient index distribution of the nanoporous SiO2 stacks was obtained by rotating the angle of the substrate. A low average reflectivity of less than 2% at normal incidence in the wavelength range 280 to 3300 nm was achieved, and the average reflectivity over the angle range 15 to 89° was 3.7% for the wavelength between 300 and 1700 nm.