Jiayong Zhang

Quantum Spin-Quantum Anomalous Hall Insulators and Topological Transitions in Functionalized Sb(111) Monolayers

Electronic and topological behaviors of Sb(111) monolayers decorated with H and certain magnetic atoms are investigated by using ab initio methods. The drastic exchange field induced by the magnetic atoms, together with strong spin-orbit coupling (SOC) of Sb atoms, generates one new category of valley polarized topological insulators, called quantum spin-quantum anomalous Hall (QSQAH) insulators in the monolayer, with a band gap up to 53 meV. The strong SOC is closely related to Sb px and py orbitals, instead of pz orbitals in usual two-dimensional (2D) materials. Topological transitions from quantum anomalous Hall states to QSQAH states and then to time-reversal-symmetry-broken quantum spin Hall states are achieved by tuning the SOC strength. The behind mechanism is revealed. Our work is helpful for future valleytronic and spintronic applications in 2D materials.

Quantum Anomalous Hall Effect in Graphene-based Heterostructure.

Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.

Quantum spin–quantum anomalous Hall effect with tunable edge states in Sb monolayer-based heterostructures

A novel topological insulator with tunable edge states, called a quantum spin\char21{}quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated

Quantum valley Hall states and topological transitions in Pt(Ni, Pd)-decorated silicene: A first-principles study

\mathrm{Sb}(\mathrm{S}{\mathrm{b}}_{2}\mathrm{H})

Quantum anomalous Hall effect in real materials

monolayer on a

Quantum anomalous Hall effect in stable dumbbell stanene

\mathrm{LaFe}{\mathrm{O}}_{3}

Giant spin-valley polarization and multiple Hall effect in functionalized bismuth monolayers

substrate by using ab initio methods. The substrate induces a drastic staggered exchange field in the

Novel Chern insulators with half-metallic edge states

\mathrm{S}{\mathrm{b}}_{2}\mathrm{H}

Abundant topological states in silicene with transition metal adatoms

film, which plays an important role to generate the QSQAH effect. A topologically nontrivial band gap (up to 35 meV) is opened by Rashba spin-orbit coupling, which can be enlarged by strain and an electric field. To understand the underlying physical mechanism of the QSQAH effect, a tight-binding model based on

Quantum spin Hall andZ2metallic states in an organic material

{p}_{x}