Jie Shang

A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching

The uniformity of operating parameters in organic nonvolatile memory devices is very important to avoid false programming and error readout problems. In the present work, we fabricated an organic resistive-switching memory based on protonic-acid-doped polyazomethine (PA-TsOH), which demonstrates an excellent operative uniformity and multilevel storage capability. The deliberate tuning of the resistance states can be attributed to the electric-field-controlled molecular doping of the imine-containing polymers.

Direct observation of lithium-ion transport under an electrical field in LixCoO2 nanograins.

The past decades have witnessed the development of many technologies based on nanoionics, especially lithium-ion batteries (LIBs). Now there is an urgent need for developing LIBs with good high-rate capability and high power. LIBs with nanostructured electrodes show great potentials for achieving such goals. However, the nature of Li-ion transport behaviors within the nanostructured electrodes is not well clarified yet. Here, Li-ion transport behaviors in LixCoO2 nanograins are investigated by employing conductive atomic force microscopy (C-AFM) technique to study the local Li-ion diffusion induced conductance change behaviors with a spatial resolution of ~10 nm. It is found that grain boundary has a low Li-ion diffusion energy barrier and provides a fast Li-ion diffusion pathway, which is also confirmed by our first principles calculation. This information provides important guidelines for designing high performance LIBs from a point view of optimizing the electrode material microstructures and the development of nanoionics.

A resistance-switchable and ferroelectric metal-organic framework.

The ever-emerging demands on miniaturization of electronic devices have pushed the development of innovative materials with desired properties. One major endeavor is the development of organic- or organic-inorganic hybrid-based electronics as alternatives or supplements to silicon-based devices. Herein we report the first observation of the coexistence of resistance switching and ferroelectricity in a metal-organic framework (MOF) material, [InC16H11N2O8]·1.5H2O, denoted as RSMOF-1. The electrical resistance of RSMOF-1 can be turned on and off repeatedly with a current ratio of 30. A first-principles molecular dynamics simulation suggests that the resistive switching effect is related to the ferroelectric transition of N···H-O···H-N bridge-structured dipoles of the guest water molecules and the amino-tethered MOF nanochannel. The discovery of the resistive switching effect and ferroelectricity in MOFs offers great potential for the physical implementation of novel electronics for next-generation digital processing and communication.

Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

Exploring the role of electrode metals on the resistive switching properties of metal electrode/oxide/metal electrode sandwiched structures provides not only essential information to understand the underlying switching mechanism of the devices, but also useful guidelines for the optimization of the switching performance. A systematic study has been performed to investigate the influence of electrodes on the resistive switching characteristics of zinc oxide (ZnO) films in this contribution, in terms of both the intrinsic and interfacial effects. It has been found that the low-resistance state resistances (Ω(LRS)) of all the investigated devices are below 50 Ω, which can be attributed to the formation of highly conductive channels throughout the ZnO films. On the other hand, the high-resistance state resistances (Ω(HRS)) depend on the electronegativity and ionic size of the employed electrode metals. Devices with electrode metals of high electronegativity and large ionic size possess high Ω(HRS) values, while those with electrode metals of low electronegativity and small ionic size carry low Ω(HRS) values. A similar trend of the set voltages has also been observed, while the reset voltages are all distributed in a narrow range close to ±0.5 V. Moreover, the forming voltages of the switching devices strongly depend on the roughness of the metal/ZnO and/or ZnO/metal interface. The present work provides essential information for better understanding the switching mechanism of zinc oxide based devices, and benefits the rational selection of proper electrode metals for the device performance optimization.

Role of oxadiazole moiety in different D–A polyazothines and related resistive switching properties

Two donor–acceptor (D–A) polyazothines (PAs), incorporating the oxadiazole entity either acting as an electron acceptor (A) to form D–A structured PA-1 with the triphenylamine donor (D), or acting as a donor to form D–A structured PA-2 with the 3,3′-dinitro-diphenylsulfone acceptor, have been successfully synthesized via a polycondensation reaction. The variation in the role of the oxadiazole moiety in the D–A polymers, together with the use of different top electrode metals, leads to interesting electronic transport properties and various resistive switching behaviors of the present polyazothines. Pt-electrode devices based on a PA-1 active layer show a rewritable memory effect with poor endurance (less than 20 cycles), whereas the PA-2 based Pt devices exhibit write-once read-many-times (WORM) memory behavior. For the Al-electrode devices, both PAs demonstrate a much improved resistive switching effect, and the endurance of the PA-2 devices is better than that of the PA-1 devices. The difference in the electronic transport and memory properties of the four devices may originate from the different charge injection/extraction and electron transfer processes of the sandwich systems, and will provide guidelines for selecting both the proper D and A moieties in D–A polymers and electrode metals for high-performance resistance random access memories (RRAMs).

An organic terpyridyl-iron polymer based memristor for synaptic plasticity and learning behavior simulation

Memristors have been extensively studied for nonvolatile memory storage, neuromorphic computing, and logic applications. Particularly, synapse emulation is viewed as a key step to realizing neuromorphic computing, because the biological synapse is the basic unit for learning and memory. In this study, a memristor with the simple structure of Ta/viologen diperchlorate [EV(ClO4)2]/terpyridyl-iron polymer (TPy-Fe)/ITO is fabricated to simulate the functions of the synapse. Essential synaptic plasticity and learning behaviours are emulated by using this memristor, such as spike-timing-dependent plasticity and spike-rate-dependent plasticity. It is demonstrated that the redox between a terpyridyl-iron polymer and viologen species leads to our memristor behavior. Furthermore, the learning behavior depending on different amplitudes of voltage pulses is investigated as well. These demonstrations help pave the way for building bioinspired neuromorphic systems based on memristors.

Synaptic plasticity and learning behaviours in flexible artificial synapse based on polymer/viologen system

In this study, an artificial synapse with a sandwich structure of Ta/ethyl viologen diperchlorate [EV(ClO4)2]/triphenylamine-based polyimide (TPA-PI)/Pt is fabricated directly on a flexible PET substrate and exhibits distinctive history-dependent memristive behaviour, which meets the basic requirements for synapse emulation. Essential synaptic plasticity (including long-term plasticity and short-term plasticity) and some memory and learning behaviours of human beings (including the conversion from short-term memory to long-term memory and the “learning–forgetting–relearning”) have been demonstrated in our device. More importantly, the device still exhibits the synaptic performance when the surface strain of the device reaches 0.64% (or, the bending radius reaches 10 mm). Moreover, the device was able to endure 100 bending cycles. Our findings strongly demonstrate that the organic artificial synapse is not only promising for constructing a neuromorphic information storage and processing system, but is also interesting for the realization of wearable neuromorphic computing systems.

Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

We demonstrated that the formation of magnetic conductive filaments in Co/ZnO/Fe sandwich structures can be employed to produce a nanoscale magnetic tunnel junction (MTJ) and control the tunneling magnetoresistance (TMR). The pristine Co/ZnO/Fe structures with a 100 nm thick ZnO layer do not exhibit any remarkable TMR. Under voltage sweeps performed on the sandwich devices, Co conductive filaments were grown in a ZnO layer, which leads to the formation of nanoscale Co/ZnO/Fe MTJs and the occurrence of TMR. In addition, a sign inversion of TMR was found in the nano-MTJs by carrying out the further voltage sweeps or varying the measuring bias voltage, which could be well understood in terms of the resonant tunneling caused by impurity scattering in a ZnO barrier.

Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering

As a low-bandgap ferroelectric material, BiFeO3 has gained wide attention for the potential photovoltaic applications, since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi(Fe, Mn)O3 thin films are fabricated by pulsed laser deposition method, and the effects of Mn doping on the microstructure, optical, leakage, ferroelectric and photovoltaic characteristics of Bi(Fe, Mn)O3 thin films are systematically investigated. The x-ray diffraction data indicate that Bi(Fe, Mn)O3 thin films each have a rhombohedrally distorted perovskite structure. From the light absorption results, it follows that the band gap of Bi(Fe, Mn)O3 thin films can be tuned by doping different amounts of Mn content. More importantly, photovoltaic measurement demonstrates that the short-circuit photocurrent density and the open-circuit voltage can both be remarkably improved through doping an appropriate amount of Mn content, leading to the fascinating fact that the maximum power output of ITO/BiFe0.7Mn0.3O3/Nb-STO capacitor is about 175 times higher than that of ITO/BiFeO3/Nb-STO capacitor. The improvement of photovoltaic response in Bi(Fe, Mn)O3 thin film can be reasonably explained as being due to absorbing more visible light through bandgap engineering and maintaining the ferroelectric property at the same time.

Modulation of physical properties of oxide thin films by multiple fields

Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices.Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity, etc. More importantly, the exhibited multifunctionality could be tuned by various external fields, which has enabled demonstration of novel electronic devices. In this article, recent studies of the multi-fields modulation of physical properties in oxide thin films have been reviewed. Some of the key issues and prospects about this field are also addressed.