Jie Shen

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

Quantized and Anomalous The Hall effect, an electromagnetic phenomenon with a straightforward explanation, has many exotic counterparts, including a quantized version occurring independently of the presence of external magnetic fields. Inspired by a theoretical prediction of the quantum anomalous Hall (QAH) effect in magnetically doped topological insulator thin films, Chang et al. (p. 167, published online 14 March; see the Perspective by Oh) prepared thin films of the compound Cr0.15(Bi0.1Sb0.9)1.85Te3, with Cr as the magnetic dopant. They observed a plateau in the Hall resistance as a function of the gating voltage without any applied magnetic fields, signifying the achievement of the QAH state. An elusive effect emerges in thin films of a bismuth-antimony-telluride topological insulator doped with magnetic chromium. [Also see Perspective by Oh] The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e2, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

Strong Superconducting Proximity Effect in Pb-Bi 2 Te 3 Hybrid Structures

To study the interface between a conventional superconductor and a topological insulator, we fabricated Pb-Bi2Te3-Pb lateral and sandwiched junctions, and performed electron transport measurements down to low temperatures. The results show that there is a strong superconducting proximity effect between Bi2Te3 and Pb, as that a supercurrent can be established along the thickness direction of the Bi2Te3 flakes (100~300 nm thick) at a temperature very close to the superconducting Tc of Pb. Moreover, a Josephson current can be established over several microns in the lateral direction between two Pb electrodes on the Bi2Te3 surface. We have further demonstrated that superconducting quantum interference devices can be constructed based on the proximity-effect-induced superconductivity. The critical current of the devices exhibits s-wave-like interference and Fraunhofer diffraction patterns. With improved designs, Josephson devices of this type would provide a test-bed for exploring novel phenomena such as Majorana fermions in the future.

Proximity effect at superconducting Sn-Bi2Se3 interface

We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap that is different from that of Sn, and a zero-bias conductance peak that increases at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support the idea that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.

Aharonov-casher effect in Bi2Se3 square-ring interferometers.

Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

Aharonov-Casher effect in Bi

Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

_{\rm 2}

Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

Se

Electrical control of spin dynamics in Bi(2)Se(3) was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against a magnetic field, and Aharonov-Casher resistance oscillations against the gate voltage were observed in the presence of a Berry phase of π. A very large tunability of spin precession angle by the gate voltage has been obtained, indicating that Bi(2)Se(3)-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.