Jie-Yu Wang

Ambipolar polymer field-effect transistors based on fluorinated isoindigo: high performance and improved ambient stability.

Ambipolar transport behavior in isoindigo-based conjugated polymers is observed for the first time. Fluorination on the isoindigo unit effectively lowers the LUMO level of the polymer and significantly increases the electron mobility from 10(-2) to 0.43 cm(2) V(-1) s(-1) while maintaining high hole mobility up to 1.85 cm(2) V(-1) s(-1) for FET devices fabricated in ambient. Further investigation indicates that fluorination also affects the interchain interactions of polymer backbones, thus leading to different polymer packing in thin films.

Design, Synthesis, and Structure–Property Relationships of Isoindigo-Based Conjugated Polymers

Conjugated polymers have developed rapidly due to their promising applications in low-cost, lightweight, and flexible electronics. The development of the third-generation donor-acceptor (D-A) polymers greatly improved the device performance in organic solar cells (OSCs) and field-effect transistors (FETs). However, for further improvement of device performance, scientists need to develop new building blocks, in particular electron-deficient aromatics, and gain an in-depth understanding of the structure-property relationships. Recently, isoindigo has been used as a new acceptor of D-A conjugated polymers. An isomer of indigo, isoindigo is a less well-known dye and can be isolated as a by-product from certain biological processes. It has two lactam rings and exhibits strong electron-withdrawing character. This electron deficiency gives isoindigo-based polymers intriguing properties, such as broad absorption and high open circuit voltage in OSCs, as well as high mobility and good ambient stability in FETs. In this Account, we review our recent progress on the design, synthesis, and structure-property relationship study of isoindigo-based polymers for FETs. Starting with some discussion on carrier transport in polymer films, we provide some basic strategies towards high-performance polymer FETs. We discuss the stability issue of devices, the impediment of the alkyl side chains, and the choice of the donor part of conjugated polymers. We demonstrate that introducing the isoindigo core effectively lowers the HOMO levels of polymers and provides FETs with long-time stability. In addition, we have found that when we use inappropriate alkyl side chains or non-centrosymmetric donors, the device performance of isoindigo polymers suffers. To further improve device performance and ambient stability, we propose several design strategies, such as using farther branched alkyl chains, modulating polymer energy levels, and extending π-conjugated backbones. We have found that using farther branched alkyl chains can effectively decrease interchain π-π stacking distance and improve carrier mobility. When we introduce electron-deficient functional groups on the isoindigo core, the LUMO levels of the polymers markedly decrease, which significantly improves the electron mobility and device stability. In addition, we present a new polymer system called BDOPV, which is based on the concept of π-extended isoindigo. By application of some strategies successfully used in isoindigo-based polymers, BDOPV-based polymers exhibit high mobility and good stability both in n-type and in ambipolar FETs. We believe that a synergy of molecular engineering strategies towards the isoindigo core, donor units, and side chains may further improve the performance and broaden the application of isoindigo-based polymers.

Conformation locked strong electron-deficient poly(p-phenylene vinylene) derivatives for ambient-stable n-type field-effect transistors: synthesis, properties, and effects of fluorine substitution position.

The charge carrier mobility of p-type and ambipolar polymer field-effect transistors (FETs) has been improved substantially. Nonetheless, high-mobility n-type polymers are rare, and few can be operated under ambient conditions. This situation is mainly caused by the scarcity of strong electron-deficient building blocks. Herein, we present two novel electron-deficient building blocks, FBDOPV-1 and FBDOPV-2, with low LUMO levels down to -4.38 eV. On the basis of both building blocks, we develop two poly(p-phenylene vinylene) derivatives (PPVs), FBDPPV-1 and FBDPPV-2, for high-performance n-type polymer FETs. The introduction of the fluorine atoms effectively lowers the LUMO levels of both polymers, leading to LUMO levels as low as -4.30 eV. Fluorination endows both polymers with not only lower LUMO levels, but also more ordered thin-film packing, smaller π-π stacking distance, stronger interchain interaction and locked conformation of polymer backbones. All these factors provide FBDPPV-1 with high electron mobilities up to 1.70 cm(2) V(-1) s(-1) and good stability under ambient conditions. Furthermore, when polymers have different fluorination positions, their backbone conformations in solid state differ, eventually leading to different device performance.

Electron-Deficient Poly(p-phenylene vinylene) Provides Electron Mobility over 1 cm2 V-1 s-1 under Ambient Conditions

Poly(p-phenylene vinylene) derivatives (PPVs) are one of the most widely investigated p-type polymers in organic electronics. PPVs generally exhibit electron mobilities lower than 10(-4) cm(2) V(-1) s(-1), thus hindering their applications in high-performance polymer field-effect transistors and organic photovoltaics. Herein, we design and synthesize a novel electron-deficient PPV derivative, benzodifurandione-based PPV (BDPPV). This new PPV derivative displays high electron mobilities up to 1.1 cm(2) V(-1) s(-1) under ambient conditions (4 orders of magnitude higher than those of other PPVs), because it overcomes common defects in PPVs, such as conformational disorder, weak interchain interaction, and a high LUMO level. BDPPV represents the first polymer that can transport electrons over 1 cm(2) V(-1) s(-1) under ambient conditions.

BN Heterosuperbenzenes: Synthesis and Properties

Replacement of C=C unit with its isoelectronic B-N unit in aromatics provides a new class of molecules with appealing properties, which have attracted great attention recently. In this Concept, we focus on BN-substituted polycyclic aromatics with fused structures, and review their synthesis, photophysical, and redox properties, as well as their applications in organic electronics. We also present challenging synthetic targets, large BN- substituted polycyclic aromatics, such as regioregular BN heterosuperbenzenes, which can be viewed as BN-doped nanographenes. Finally, we propose an atomically precise bottom-up synthesis of structurally well-defined BN-doped graphenes.

Azaborine Compounds for Organic Field‐Effect Transistors: Efficient Synthesis, Remarkable Stability, and BN Dipole Interactions

Organic semiconductors have attracted great attention during the past few decades for the development of next-generation electronics. The incorporation of a B N unit, which is isoelectronic to the C=C moiety, into p systems provides a novel approach in the molecular engineering of organic semiconductors. BN substitution can change the electronic properties of p systems, and afford additional intermolecular dipole–dipole interactions. Therefore, BN-incorporated semiconductors provide new opportunities for organic electronics. Although significant progress has been made in azaborine chemistry, the construction of azaborine rings in large p scaffolds remains challenging. Moreover, azaborine compounds are usually susceptible to moisture and oxygen, and their thermal decomposition temperatures are around 200 8C, thus limiting their promising applications as organic materials. As a result, the charge-transport properties of azaborine compounds have rarely been investigated up to now. Only recently, Nakamura and co-workers reported a BN-fused polycyclic aromatic compound which exhibited higher intrinsic hole mobility than its carbon analog by timeresolved microwave conductivity measurements, implying that BN-substituted aromatics might outperform their carbon analogs in organic electronics. Nonetheless, electronic devices based on azaborine compounds have not yet been demonstrated. Herein, we synthesize two novel BN-substituted tetrathienonaphthalene derivatives BN-TTN-C3 and BN-TTN-C6 through an efficient one-pot electrophilic borylation method (Scheme 1). Four thiophene rings are fused onto a BNsubstituted naphthalene core to extend the p conjugated plane for intermolecular p–p stacking and charge-carrier

A BDOPV-Based Donor-Acceptor Polymer for High-Performance n-Type and Oxygen-Doped Ambipolar Field-Effect Transistors

An electron-deficient building block BDOPV is developed to construct a new donor-acceptor conjugated polymer BDOPV-2T for high-performance n-type and oxygen-doped ambipolar polymer field-effect transistors. A high electron mobility up to 1.74 cm(2) V(-1) s(-1) is demonstrated under ambient conditions. Furthermore, the oxygen-doping effect and possible mechanism are discussed.

A straightforward strategy toward large BN-embedded π-systems: Synthesis, structure, and optoelectronic properties of extended BN heterosuperbenzenes

A straightforward strategy has been used to construct large BN-embedded π-systems simply from azaacenes. BN heterosuperbenzene derivatives, the largest BN heteroaromatics to date, have been synthesized in three steps. The molecules exhibit curved π-surfaces, showing two different conformations which are self-organized into a sandwich structure and further packed into a π-stacking column. The assembled microribbons exhibit good charge transport properties and photoconductivity, representing an important step toward the optoelectronic applications of BN-embedded aromatics.

Toward High Performance n-Type Thermoelectric Materials by Rational Modification of BDPPV Backbones

Three n-type polymers BDPPV, ClBDPPV, and FBDPPV which exhibit outstanding electrical conductivities when mixed with an n-type dopant, N-DMBI ((4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine), in solution. High electron mobility and an efficient doping process endow FBDPPV with the highest electrical conductivities of 14 S cm(-1) and power factors up to 28 μW m(-1) K(-2), which is the highest thermoelectric (TE) power factor that has been reported for solution processable n-type conjugated polymers. Our investigations reveal that introduction of halogen atoms to the polymer backbones has a dramatic influence on not only the electron mobilities but also the doping levels, both of which are critical to the electrical conductivities. This work suggests the significance of rational modification of polymer structures and opens the gate for applying the rapidly developed organic semiconductors with high carrier mobilities to thermoelectric field.

Non-fullerene acceptors containing fluoranthene-fused imides for solution-processed inverted organic solar cells

Six fluoranthene-fused imide derivatives were employed as acceptors in solution processed inverted BHJ solar cells with P3HT as the donor. The PCEs of all devices vary from 2.14% to 2.89%. All acceptors are in their amorphous state with low electron mobility, but achieving high PCEs.