Jifeng Luo

Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the Io-type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n≫2.0) in the prepared ZnO/diamond p–n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p–n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode.

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9–17.9GPa to be a semiconductor to semiconductor transformation.A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9–17.9GPa to be a semiconductor to semiconductor transformation.

Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

Abstract ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of −4 to +4 V. The diode possessed an optical transmission of 50–70% in 500–700 nm wavelength regions.

Accurate measurements of high pressure resistivity in a diamond anvil cell

A new technique incorporating a diamond anvil cell with photolithographic and film deposition techniques has been developed for electrical resistivity measurement under high pressure. Molybdenum was sputtered onto a diamond anvil facet and patterned to the desired microcircuit. A sputtered Al2O3 (alumina) layer was then fabricated onto the Mo-coated layer to insulate the thin-film electrodes from the metallic gasket and to protect the electrodes against plastic deformation under high pressure conditions. For better insulation, Al2O3 was also sputtered onto the metallic gasket. The regular shape of the microcircuit makes it convenient to perform an electric current field analysis, hence, accurate resistivity data can be obtained from the measurement. We performed the measurement of nanocrystalline ZnS to 36 GPa and determined its reversibility and phase transition hysteresis.

High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

We presented the results on the fabrication and characterization of high-quality heterojunction between p-type diamond single-crystalline film and n-type cubic boron nitride (c-BN) bulk single crystal. By employing a simple surface diffusion, we prepared the n-type c-BN bulk single crystals with relatively low resistivity (1.0×10−1 Ω cm). Combining p-type diamond films grown by chemical vapor deposition with n-type c-BN, we fabricated a high-quality heterojunction bipolar p–n diode, which the turn-on voltage of the heterojunction was 0.85 V, and the current density reached to 170 A/m2 when the forward bias was applied to 3 V.

Conduction mechanism in a novel oxadiazole derivative: effects of temperature and hydrostatic pressure

The quasi-four-probe resistivity measurement on the microcrystal of 1,4-bis[(4-heptyloxyphenyl)-1,3,4-oxadiazolyl]phenylene (OXD-3) is carried out under variable pressure and temperature conditions using a diamond anvil cell (DAC). Sample resistivity is calculated with a finite element analysis method. The temperature and pressure dependences of the resistivity of OXD-3 microcrystal are measured up to 150°C and 15 GPa, and the resistivity of OXD-3 decreases with increasing temperature, indicating that OXD-3 exhibits organic semiconductor transport property in the region of experimental pressure. With an increase of pressure, the resistivity of OXD-3 first increases and reaches a maximum at about 8 GPa, and then begins to decrease at high pressures. From the x-ray diffraction data in DAC under pressure, we can conclude that the anomaly of resistivity variation at 8 GPa results from the pressure-induced amorphism of OXD-3.

New insights into selected-area deposition of diamond films by means of selective seeding

Polycrystalline diamond films have been patterned on a polished Si substrate by means of selective seeding via hot-filament chemical vapour deposition. In addition to the process of selective seeding, the CH4/H2 concentration and the sizes of the patterns have effects on the selectivity. The mechanism of selective growth of diamond is also discussed in this paper.

Preparation of ohmic n-type cubic boron nitride contacts

Ohmic electrodes in the form of n-type (Si-doped) cubic boron nitride (c-BN) bulk crystals were fabricated by utilizing a covering technique, depositing Ti(10 nm)/Mo/(20 nm)/Pt–Au(200 nm) ohmic contact metal on both the sides of the c-BN substrate. The size of the specimen electrode was 100 × 100 μ m2 on one side and 300 × 300 μ m2 on the other side. Measurements on the specimen were made using a specially made device. Linear current–voltage characteristics were obtained. It is considered that the contact between the Ti-and Si-doped c-BN was ohmic.

Diamond films grown on seeded substrates by hot-filament chemical vapour deposition with H2 as the only feeding gas

Diamond films have been grown on polished Si substrates seeded with nanocrystalline diamond powder colloid using hot-filament chemical vapour deposition. Instead of using the conventional gaseous carbon source, a carbonized W filament was used as the carbon source. The only feeding gas was hydrogen. Compared with those produced by traditional methods, the polycrystalline diamond grown by this new method has smaller grain size. The growth mechanism is also discussed.